研究生: |
劉健丞 Jian-cheng Liou |
---|---|
論文名稱: |
低功耗且低製程變異之具電壓校正時域智慧型溫度感測器 Low Power and Low Process Variation Time-Domain Smart Temperature Sensor with Voltage Calibration |
指導教授: |
陳伯奇
Poki Chen |
口試委員: |
陳信樹
Hsin-shu Chen 李泰成 Tai-cheng Lee 楊清淵 Ching-yuan Yang 鍾勇輝 Yung-hui Chung |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2014 |
畢業學年度: | 102 |
語文別: | 中文 |
論文頁數: | 128 |
中文關鍵詞: | 時間至數位轉換器 、電壓校正 、曲率補償 、低溫敏電流源 、智慧型溫度感測器 、蒙地卡羅分析 |
外文關鍵詞: | Time-to-digital converte, Voltage-calibration, Curvature compensation, temperature-independent current source, Smart temperature sensor, Monte carlo analysis |
相關次數: | 點閱:312 下載:6 |
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低成本且高效能的溫度感測器擁有龐大的市場潛力,被廣泛應用於(1)環境溫度監控、(2)平面顯示器溫度補償、(3)背光系統溫度管理、(4)可攜式或移動式消費電子溫度控制系統、(5)輪胎溫度監測系統…等等並可結合RFID來應用。
為了克服校正成本及量產成本的問題,本論文所提出之溫度感測器是採用電壓校正實現低功秏且低製程變異之時域智慧型溫度感測器以減少大規模量產成本及功秏。主要架構採一可調節溫敏振盪器,其電壓振盪範圍為具曲率補償之VCTAT與VPTAT參考電壓,用來產生高線性且與溫度相依之輸出脈衝,而時間至數位轉換器(TDC)被用來轉出數位輸出。利用蒙地卡羅分析出最佳面積配比及多重元件佈局技巧以降低製程隨機與系統誤差,並且採用電壓校正取代溫度校正加以去除可調節溫敏振盪器之製程變異的影響。
本溫度感測晶片使用TSMC 0.18-μm CMOS標準製程來實現,操作速度高達543k S/s且每次轉換功秏僅需364pJ,操作電壓為1.8V,晶片核心面積僅0.134mm2,解析度為0.46°C,且量測誤差可在-0.73°C ~ +1.06°C內,而感溫範圍可從-40°C到120°C。其性能甚至優於以往一些需要單點或雙點校正之溫度感測晶片!因此,本論文架構為時域智慧型溫度感測器立下擺脫定溫校正桎梏之嶄新里程碑。
Low cost but high performance temperature sensors are extensively applied to the following applications:1) ambient temperature monitoring for home or office electronics; 2) thermal compensation for flat panel displays; 3) temperature management for backlight systems and power electronics; 4) temperature control in portable or mobile consumer electronics products such as personal computers and domestic appliances; 5) tyre monitoring systems and combing integrated temperature sensors with Radio Frequency Identification (RFID) tags.
To overcome the calibration and mass production problem, this thermal sensor presents the voltage-calibrated and low power CMOS time-domain smart temperature sensor to reduce the cost of mass production and power consumption. An adjustable Temperature-Sensitive Oscillator designed as the temperature sensor vibrates between CMOS-based VCTAT, VPTAT voltage references with mutual curvature compensation to generate linear temperature-dependent output pulses. The TDC is used for output coding. To reduce the process random error and system error are used monte carlo analysis the best layout-aware and multiple component layout skills. Voltage instead of temperature calibration is adopted to alleviate the impact of process variation.
Fabricated in a TSMC 0.18-μm standard CMOS process, the proposed sensor is able to operate at a high speed of 543k Samples/sec. Moreover, each sample consumes only 364pJ at 1.8V operation voltage. The core active area is merely 0.134mm2, resolution is 0.46°C and inaccuracy is measured to be -0.73°C~+1.06°C in a wide temperature range of -40°C to 120°C. The performance is even superior to some chips with one- or two-point temperature calibrations. A milestone is established for time-domain smart temperature sensor to get rid of the heavy burden of fixed-temperature calibration with reason error budget.
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