本論文成長並探討過渡性金屬鎘銦化雙硫屬化合物之二硫化銦鎘 (CdInS2) 及二硒化銦鎘 (CdInSe2) 的光學特性與載子動力學之研究。首先利用化學氣相傳導法成長 CdInS2 與 CdInSe2 之單晶，並對此系列晶體進行詳細的晶體結構分析、光學及電性量測。
藉由能量色散X射線光電子能譜確認成長材料之元素比例與預期成份相符，透過 X 射線晶格繞射及穿透式電子顯微鏡分析 CdInS2 及CdInSe2 之結構為六方晶系單晶結構，CdInS2 之晶格常數 a＝3.55 Å、c＝7.02 Å；CdInSe2 之晶格常數 a＝4.00 Å、c＝16.88 Å。穿透及光激發螢光實驗證明 CdInS2 與 CdInSe2 皆為直接能隙材料，於室溫下能隙為 2.47 eV 與 1.82 eV，隨著溫度降低，吸收與激發位置產生藍移現象；時間解析光激螢光光譜證實 CdInS2 與 CdInSe2 發光為自由激子所主導，為能帶邊緣復合機制，於室溫中時間常數 τ1 皆非常快速，為 0.21 ns 與 0.27 ns。由熱探針與霍爾量測實驗證實 CdInS2 與 CdInSe2 皆為 N 型半導體，藉由變溫電阻率的量測中，可發現材料呈現出半導體趨勢。
本論文成功合成具有穩定光學特性，且能夠發出高強度的綠光與紅光並擁有高度結晶性之 CdInS2 與 CdInSe2 單晶材料，更加開拓了其於未來光學元件應用的前景。

This work discusses the optical properties and carrier dynamics of transition metal cadmium indium disulfide (CdInS2) and cadmium indium diselenide (CdInSe2). Single crystals of CdInS2 and CdInSe2 were successfully grown by the chemical vapor transport method. The crystal structure, optical and electrical properties were carried out for both crystals. The energy dispersive X-ray spectroscopy verified that the stoichiometry of the crystals is close to the ideal value. The structural analysis was done with X-ray diffraction analysis and high resolution transmission electron microscopy. The results confirmed that CdInS2 and CdInSe2 were crystallized in hexagonal structure. The lattice constants are determined to be a=3.55 Å, c=7.02 Å for CdInS2 and a=4.00 Å, c=16.88 Å for CdInSe2, respectively. The transmission and photoluminescence experiments are done at the temperature range from 20 K to 300K. Both measurements show that CdInS2 and CdInSe2 are direct energy gap materials, with energy gaps located at 2.475 eV and 1.820 eV at room temperature. As the temperature decreases, the absorption and excitation positions show blue-shift behavior; the time-resolved photoluminescence measurement confirmed that the lifetime of CdInS2 and CdInSe2 is dominated by the free exciton, which is a band-edge recombination mechanism. The time constants τ1 are very fast at room temperature, which are 0.21 ns and 0.27 ns for CdInS2 and CdInSe2, respectively. The hot probe and Hall measurement experiments confirmed that CdInS2 and CdInSe2 are N-type semiconductors. Based on the results of CdInS2 and CdInSe2 single crystals, the future applications of the materials in the optoelectronic devices field are expected.

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