研究生: |
陳顗丞 Yi-Cheng Chen |
---|---|
論文名稱: |
Al0.5CoCrFeNi2高熵合金薄膜及其氮化物特性分析 Characteristics and Analysis of Al0.5CoCrFeNi2 High Entropy Alloy Thin Film and its Nitride Film |
指導教授: |
丘群
Chun Chiu |
口試委員: |
陳士勛
Shih-Hsun Chen 李志偉 Jyh-Wei Lee |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 機械工程系 Department of Mechanical Engineering |
論文出版年: | 2019 |
畢業學年度: | 107 |
語文別: | 中文 |
論文頁數: | 125 |
中文關鍵詞: | 高熵合金 、Al0.5CoCrFeNi2 、薄膜 、氮化膜 |
外文關鍵詞: | high entropy alloys, Al0.5CoCrFeNi2, thin film, nitride film |
相關次數: | 點閱:255 下載:0 |
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本實驗使用氣體霧化法之Al0.5CoCrFeNi2高熵合金粉末為原材,利用真空熔煉法製備Al0.5CoCrFeNi2高熵合金靶材,再以DC直流濺鍍法鍍製高熵合金金屬及其氮化物薄膜,並探討工作壓力、基板偏壓及氮氣流量對薄膜微結構和機械性質的影響。
實驗結果發現使用氣體霧化法之Al0.5CoCrFeNi2高熵合金粉末製作濺鍍靶材,還是發現有些微偏析的情況。薄膜方面發現Al0.5CoCrFeNi2薄膜工作壓力由3 mtorr上升至10 mtorr,薄膜厚度減少500 nm,薄膜硬度和彈性模數分別降低3 GPa和60 GPa;在各個工作壓力的薄膜加入基板偏壓由 -0 V增加到 -150 V,硬度均增加2~ 3 GPa,在10 mtorr偏壓為 -150 V時硬度及彈性模數反而因為過多離子高速撞擊基板導致強度降低,而在3 mtorr偏壓 -150 V得到最佳濺鍍參數;後續利用此參數進行氮氣流量對薄膜影響的實驗,結果顯示通入氮氣後薄膜整體性質變得更加優異,氮氣流量為1 sccm時得到最高之硬度9.02 GPa,但通入越多氮氣後,雖然薄膜平整性稍微有所提升,可是薄膜厚度、硬度及彈性模數都隨之下降。
In this study, Al0.5CoCrFeNi2 high-entropy alloy powder was used as the raw material by gas atomization method. The powder was prepared into Al0.5CoCrFeNi2 high-entropy alloy target by vacuum melting method. High-entropy alloy film and its nitride film deposited by DC sputtering. Investigate the effects of working pressure, substrate bias and nitrogen flow on the microstructure and mechanical properties of the film.
The experimental results showed that segregation was observed in the sputtering target made by the Al0.5CoCrFeNi2 high-entropy alloy powder. The thickness of Al0.5CoCrFeNi2 film was reduced to 500nm, and the hardness and elastic modulus were reduced 3Gpa and 60Gpa, respectively, while the working pressure was increased from 3 mtorr to 10 mtorr. The film bias was added to the substrate at each working pressure by -0 V increased to -150 V, the hardness increase 2~3 GPa. When the 10 mtorr bias is -150 V, the hardness and elastic modulus were reduced due to excessive ion high-speed impact on the substrate. The best sputtering parameters were defined as 3 mtorr with bias -150 V. The subsequent experiment was carried out to investigate the effect of nitrogen flow on the film. The results show that the properties of the film become more excellent after the nitrogen gas is introduced. The highest hardness is 9.02 GPa when the nitrogen flow rate was 1 sccm. When more nitrogen gas was added, despite the roughness of the film are slightly improved, the film thickness, hardness and modulus of elasticity were all reduced.
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