本研究主要探討以室溫合成法進行氯溴化銫鉛鈣鈦礦藍光量子點製備與光電性質分析，並以此進行量子點發光二極體的製做與光電性質分析。首先，以批次法進行溴化銫鉛鈣鈦礦綠光量子點，之後再以氯化鉛做為氯源，將溴化銫鉛鈣鈦礦量子點進行部份溴離子取代，以製備氯溴化銫鉛鈣鈦礦藍光量子點。且因此合成方法製程溫度低，為探討日後進行大量製做的可行性評估，將同時以微流道法進行連續式合成氯溴化銫鉛鈣鈦礦藍光量子點的製程探討。經由結構與光譜分析可知：使用以上兩種方法進行氯溴化銫鉛鈣鈦礦藍光量子點在形貌與結構上並無太大差異，但由螢光量子效率的分析卻可知：使用連續式微流道法所合成的量子點具有較高的螢光量子效率。但由於在進行後段的陰離子交換過程中仍會導致表面產生鹵素缺陷與配體損失而使量子點的螢光量子效率仍不佳。因此在本研究中將藉由不同的鹵素後處理法進行優化。在經過許多鹵素源優化後發現：以氯化氫進行優化的效果最佳，可將氯溴化銫鉛鈣鈦礦藍光量子點的螢光量子效率提升至70%。之後，將使用室溫法所合成的鹵化銫鉛鈣鈦礦量子點進行量子點發光二極體的製作與光電性質分析。溴化銫鉛鈣鈦礦量子點綠光二極體的驅動電壓為5.40 V，最大輝度為127 cd/m2，電流效率為2.91 cd/A，外部量子效率為0.959%；碘溴化銫鉛鈣鈦礦量子點紅光二極體的驅動電壓為5.60 V，最大輝度為60.2 cd/m2，電流效率為0.122 cd/A，外部量子效率為0.367%；氯溴化銫鉛鈣鈦礦量子點藍光二極體的驅動電壓為5.20 V，輝度為2.25 cd/m2，電流效率為0.0120 cd/A，外部量子效率為0.0150%。以此三原色發光二極體進行色域分析可達106% NTSC標準。

This study mainly discusses the preparation and optoelectronic properties of cesium lead bromide chloride (CsPb(Br/Cl)3) perovskite quantum dots (PQDs) by room temperature process. In addition, CsPb(Br/Cl)3 PQDs were used to fabricate quantum dot light emission diode (QD-LED) and analyzed its emission properties. Firstly, the green emission cesium lead bromide (CsPbBr3) PQDs were synthesized by batch process and partial bromide ions of CsPbBr3 PQDs was replaced by chloride ions by using lead chloride for blue emission cesium lead bromide chloride (CsPb(Br/Cl)3) PQDs. In addition, the continuous micro-fluidic channel method was employed to discuss the feasibility of mass production in the future due to low synthesis temperature. From structure and spectrum analyses, CsPb(Br/Cl)3 PQDs synthesized by above two methods do not have much difference in morphology and structure. But from analysis of photoluminescence quantum yield (PL-QY), it can be know that CsPb(Br/Cl)3 PQDs synthesized by continuous micro-fluidic channel have higher PL-QY. However, in the stage of anion exchange process, the halogen defects and ligand loss would still occur on the surfaces of CsPb(Br/Cl)3 PQDs and the PL-QY of CsPb(Br/Cl)3 PQDs is still not good enough. Therefore, different halogen post treatment were employed for optimization. After optimizing many halogen sources, it was found that CsPb(Br/Cl)3 PQDs treated by hydrogen chloride (HCl) is the best. The PL-QY of HCl treated CsPb(Br/Cl)3 PQDs could achieve 70%. After that, cesium lead halogen (CsPbX3, X=Cl, Br, I) PQDs were used to fabricate QD-LED and to analyze their optoelectronic properties. Among them, the turn-on voltage (VT), maximum luminance (Lummax), current efficiency (CE) and external quantum efficiency (EQE) of CsPbBr3 green emission QD-LED were 5.40 V, 127 cd/m2, 2.91 cd/A and 0.959%. The VT, Lummax, CE and EQE of cesium lead bromide iodide (CsPb(Br/I)3) red emission QD-LED were 5.60 V, 60.2 cd/m2, 0.122 cd/A and 0.367%. The VT, Lummax, CE and EQE of CsPb(Br/Cl)3 blue emission QD-LED were 5.20 V, 2.25 cd/m2, 0.012 cd/A and 0.012%. The gamut of three color QD-LED can achieve 106% of NTSC standard

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