高功率脈衝磁控式濺鍍(HiPIMS)是一種新興的鍍膜技術，由於結合了磁控濺射和高功率沈積技術的優勢，可以激發更大量的靶材離子，因此近年來受到了廣泛的應用。目前HiPIMS主要被限於利用在具有結晶的鍍膜上，而關於利用HiPIMS鍍覆金屬玻璃主题的文章尚很少。在此篇論文中，主要在比較Zr60Cu25Al10Ni5金屬玻璃鍍層（TFMGs）的性質，藉由傳統的直流磁控式濺鍍（DCMS）和HiPIMS濺鍍比較。製備三種類型的樣品：（1）DCMS在1kW沉積功率下鍍覆的樣品（2）HiPIMS在1kW沉積功率下鍍覆的樣品（3）HiPIMS在2.5kW沉積功率下鍍覆的樣品。經研究發現，薄膜的微觀結構與所使用的沉積方法非常相關。由DCMS鍍覆的薄膜顯示出柱狀結構，柱内微結構出現孔隙，原因是氧氣穿透薄膜產生的途徑。而另一方面，HiPIMS鍍覆顯示出更均勻的微結構，且無柱狀結構。根據X-ray反射率測量，其密度比DCMS沉積之樣品的密度高约4％。此外，選擇區域電子衍射顯示平均原子間距的差異約為12%。這些型態和薄膜特性上的差異可能是HiPIMS薄膜中吸附原子遷移率增加的结果。吸附原子遷移率的增加是由於從靶材到基材的離子能量和離子通量增加所導致的。此外，離子型態在DCMS和HiPIMS之間有所不同，因為在DCMS沉積的情况下，來自靶材的離子只占總離子通量的13%，而HiPIMS沉積的數值為96%。這導致鍍層種類和鍍層生長之間更有效的動量傳遞，而進一步提高吸附原子的遷移率。HiPIMS沉積過程中的陰影效應被最小化，這是因爲外加了一個偏壓，使離子接近法線的角度打到基材。這些沉積技術對於薄膜的粗糙度有直接影響，DCMS和HiPIMS沉積的薄膜粗糙度分別為1.4 nm和0.2 nm。同時影響到的還有薄膜的硬度和楊氏係數。實驗結果最硬的薄膜由HiPIMS 1kW所沉積，硬度和楊氏係數分别为9.2±0.3GPa和131.6±3.6GPa，和最軟的樣品（DCMS）相比，硬度增加了35%。這種硬度上差異可以歸咎於更高的薄膜緻密度，且並無柱狀晶結構，以及樣品在HiPIMS 1kW的情况下具有更高的抗壓應力。本文的第二部分是關於TFMG的表面特性，因為當鍍層被應用於針具和切割刀片時，已被證明可以減少摩擦力、阻抗。兩種技術具有不同探測深度，電子轉換質譜（CEMS，探測深度>100 nm）和核共振散射（NRS，探測深度約2 nm），已被用於研究鍍層表面（65 ± 2 K）以及塊狀材料（约380 K）的Debye溫度。Debye溫度具有巨大的差異將對薄膜表面上的Tg進一步退火實驗，在薄膜的表面將觀察到物質向上生長。最後再進行奈米划痕實驗，在正常負載1000μN的情况下，顯示出0.007的超低COF。這種正常負載的划痕所留下的殘留划痕的深度大約為3nm，這與NRS實驗的探測深度接近。相較之下，相似性質的實驗也在COF較高的矽晶片中進行。

High power impulse magnetron sputtering (HiPIMS) is an emerging thin film deposition technique that has gathered traction in recent years, as it combines the advantages of magnetron sputtering with the advantages of energetic deposition techniques that produce high amounts of target-originating ions. As of yet, the utilization of HiPIMS has mostly been restricted to crystalline coatings and very little has been published on the topic of metallic glasses deposited by HiPIMS. In this essay, we offer a study that aims at comparing the properties of Zr60Cu25Al10Ni5 thin film metallic glasses (TFMGs) deposited by conventional direct current magnetron sputtering (DCMS) and HiPIMS. Three types of samples have been prepared: a sample deposited by DCMS at 1 kW deposition power, a sample at 1 kW time-averaged deposition power with HiPIMS and a sample at 2.5 kW time-averaged deposition power with HiPIMS. It has been found that the films microstructure strongly depends on the used deposition method. The films deposited by DCMS show a columnar structure that exhibits intra-columnar porosity which creates pathways for oxygen to penetrate the film. On the other hand, the HiPIMS show a more homogeneous microstructure that is column-free. The density of which, according to X-ray reflectivity measurements, is about 4 % higher than that of the DCMS deposited samples. Additionally, selected area electron diffraction shows a difference in average atomic spacing of about 12 %. These differences in morphology and film properties are likely a result of increased ad-atom mobility in the HiPIMS films. The increase in ad-atom mobility is facilitated by an increase in ion energy and ion flux from the target to the substrate. Furthermore, the type of ions present in the plasma differs between DCMS and HiPIMS, as the ions originating from the target constitute only 13 % of the total ion flux to the substrate in the case of the DCMS deposition, whereas this value is 96 % for the deposition by HiPIMS. This causes a more efficient momentum transfer between the film-forming species and the film’s growth front, further enhancing ad-atom mobility. Shadowing effects during HiPIMS deposition are minimized due to the application of a bias that causes the ions to arrive at the substrate with an angle close to substrate normal. These differences between the deposition techniques have a direct effect on the films roughness which are 1.4 nm and 0.2 nm for the films deposited by DCMS and HiPIMS, respectively. Also influenced are the films hardness and Young’s modulus. The hardest film was deposited by HiPIMS 1kW with a hardness and Young’s modulus of 9.2 ± 0.3 GPa and 131.6 ± 3.6 GPa, respectively. This is an increase in hardness of 35 % over the softest sample (DCMS). This difference in hardness can be attributed to a higher film density, the lack of a columnar structure, as well as to a higher compressive stress in the case of the HiPIMS 1kW sample. The second part of this essay deals with the surface properties of TFMGs, as they have shown to reduce friction when applied to e.g. needles and cutting blades. Two techniques with different probing depths, namely conversion electron Mössbauer spectroscopy (CEMS, probing depth > 100 nm) and nuclear resonance scattering (NRS, probing depth ~2 nm), have been employed to study the Debye temperature at the films surface (65 ± 2 K) as well as the bulk of the film (~ 380 K). This large difference in Debye temperature likely correlates to a strongly decreased Tg on the films surface which is further investigated by annealing experiments that show the upward growth of species on the film’s surface. Lastly, a nano-scratch experiment has been performed that shows an exceptionally low COF of 0.007 at a normal load of 1000 µN. The residual grooves left by scratches of this normal loading have an approximate depth of 3 nm which is close to the probing depth of the NRS experiment. As a comparison, a similar experiment has been performed in a Si wafer whose COF is approximately one magnitude higher.

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