本實驗設計並製造一種利用陽極層離子源的離子束濺鍍模組。此模組將一倒置的環形陽極層離子源與濺鍍靶材做結合，以減少所需的真空腔體。利用此離子束濺鍍模組將氧化銀沉積在石英基板上。研究結果顯示，銀僅在氧氣分壓大於0.8的條件下，即可完全氧化；在陽極電壓700 V 的條件下，可得到 (111) 優選結構的氧化銀；將陽極電壓提升至1500 V，結果顯示為晶面 (200)的氧化銀。所有樣品皆能找到兩個能隙，當陽極電壓由700 V 提升至1500 V 時，能隙分別由 1.0 及 2.6 eV 提升至 2.0 及 2.8 eV，此結果歸因於濺鍍材料的動能增加，使 AgO 裂解成 Ag2O。

An integrated ion beam sputter deposition module utilizing an anode layer ion source has been designed and fabricated. An inverted annular-shaped anode layer ion source is integrated with a sputtering target to reduce required vacuum volume. Silver oxide is deposited on quartz substrate utilizing this ion beam sputter module. Experimental results show that Ag is fully oxidized only with oxygen partial flow rate higher than 0.8. With an anode voltage of 700 V, silver oxide with (111) preferred orientation was obtained. Increasing anode voltage to 1500 V results in (200) orientated silver oxide thin films. Two bandgaps can be identified from all samples that increase from 1.0 and 2.6 eV to 2.0 and 2.8 eV as anode voltage increases from 700 to 1500 V, respectively. This is attributed due to the increased kinetic energy of sputtered material that results in in reduction of AgO to Ag2O.

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