本論文以原創且簡易的方式實現矽膜晶粒定位技術，其中分別有針狀型矽島陣列輔助晶粒定位和微透鏡陣列輔助晶粒定位兩種技術。前者，藉由SiON半透光膜輔助，成功的抑制住矽島橫向長晶，只需持續提高吸收係數，矽島單晶化目標即可實現。後者，將準分子雷射經過微透鏡陣列聚焦成微光束退火矽膜，得到之微晶粒當成晶種進行再次雷射退火，成功的實現晶粒位置控制，以此技術搭配HREC得到直徑10μm定位晶粒之陣列。使用XRD分析，定位晶粒主要結晶方位為<111>。

In this paper, some novel methods for location control of silicon grains by original and convenient way was realized. Its is location control of silicon grains by acicular silicon island array to assist and location control of silicon grains by microlenses array to assist separately in two kinds of technology. The former, assists by SiON translucent films, we have successfully restraining the silicon islands lateral growth of crystallization, only need takes the accurate crystalline time of silicon island of control, silicon islands form to single crystallization that can be realized. The latter, Micro-melt of Si film as a seed was formed by focusing excimer laser by microlenses array(MLA), the film was re-melted by uniform excimer laser, location control of silicon grains was realized, match HREC and receive the diameter 10μm grains array of location control with this technology. To analyse by XRD, the orient is <111> of the main crystallization position of crystalline grains. No additional photolithography process or precision excimer laser optical systems are necessary in this method.

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