使用環狀分佈電感之互補式考畢子壓控震盪器暨雙頻帶互補式考畢子壓控震盪器

簡易檢索 / 詳目顯示

回結果列表

研究生：	邱俊元 Chun-Yuan Chiu
論文名稱：	使用環狀分佈電感之互補式考畢子壓控震盪器暨雙頻帶互補式考畢子壓控震盪器 A Complementary Colpitts Voltage Controlled Oscillator Implemented with Ring Inductor and Dual Band CMOS Complementary Colpitts Voltage Controlled Oscillator
指導教授：	張勝良 Sheng-Lyang Jang
口試委員:	莊敏宏 M. H. Juang 趙良君 L. C. Chao 吳乾彌 Wu, Chen-Mie 黃進芳 Jhin-Fang Huang
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2007
畢業學年度：	95
語文別：	英文
論文頁數：	95
中文關鍵詞：	考畢子、壓控震盪器、雙頻帶
外文關鍵詞：	Colpitts, Voltage Controlled Oscillator, Dual Band
相關次數：	點閱：627 下載：0
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

本論文主要分成三個部份。第一部分是一個互補式考畢子壓控震盪器使用環狀分布電感具有在高優質(FoM)表現。此壓控振盪器具有在高優質(FoM)表現,是由兩組單端考畢子壓控振盪器組合而成,且TSMC 0.18um 1P6M製造,在電源1.5伏特偏壓下工作。此壓控震盪器電流3.75 mA，消耗功率為5.625mW,操作頻率在5.76GHz~6.76GHz。在距離6.29GHz 載波頻率1MHz處所量測相位雜訊為-122.4dBc/Hz。
第二部分是雙頻帶互補式考畢子壓控震盪器。此壓控振盪器是由兩組單端考畢子壓控振盪器且使用電晶體開關操作在雙頻帶。在電源2伏特偏壓下工作。此壓控震盪器電流7.45/5.92 mA，消耗功率為14.9/11.84 mW操作頻率在2.39 GHz ~2.68 GH 和4.84 GHz ~5.58 GHz.。在距離2.4GHz 載波頻率1MHz處所量測相位雜訊為-111.76dBc/Hz在距離5.13GHz 載波頻率1MHz處所量測相位雜訊為-121.11dBc/Hz。
最後一部份介紹八相位分立式壓控震盪器, 此壓控震盪器，電流13.09mA，消耗功率為18.32mW。操作頻率在4.72 GHz ~5.13 GHz。在電源2伏特偏壓下工作。在距離4.89GHz 載波頻率1MHz處所量測相位雜訊為-115dBc/Hz。

This thesis is mainly composed of three topics. First, we present a novel differential voltage controlled oscillator (VCO) with high figure of merit. The VCO is composed of two single-ended complementary Colpitts LC VCOs coupled by two identical inductors and is implemented in 0.18μm CMOS technology with 1.5V supply voltage. This differential VCO operates at 5.76 GHz ~6.76 GH. The phase noises of the VCO operating at 6.29GHz are -122.4 dBc/Hz at 1MHz offset while the VCO draws 3.75 mA and 5.625 mW consumption from a supply voltage of 1.5V.
Secondly,A new fully integrated, dual-band CMOS voltage controlled oscillator (VCO) is presented. The VCO is composed of two complementary Colpitts VCOs and is implemented in 0.18μm CMOS technology with 2 V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with a common LC tank. This VCO is configured with 2.4 GHz and 5.2 GHz frequency bands with differential outputs. The dual-band VCO operates at 2.39 GHz ~2.68 GH and 4.84 GHz ~5.58 GHz. The phase noises of the VCO operating at 2.4 GHz and 5.13 GHz are -121.11 and -111.76 dBc/Hz at 1MHz offset, respectively, while the VCO draws 7.45/5.92 mA and 14.9/11.84 mW consumption at high/low frequency band from a 2 V supply.
And finally, This half-quarter distributed voltage controlled oscillator operates at 4.72 GHz ~5.13 GHz. The phase noises of the VCO operating at 4.89GHz are -115 dBc/Hz at 1MHz offset while the VCO draws 13.09 mA consumption 18.32mW from a supply voltage of 1.4V.

Contents
中文摘要I
ContentsIV
List of Figures	VI
List of Tables	IX
Chapter 1	Introduction      1
     1.1 BACKGROUND	1
     1.2 THESIS ORGANIZATION	2
Chapter 2  Analysis of Oscillator	3
     2.1 THE OSCILLATOR THEORY	4
     2.1.1 Negative Resistance (NR)	4
     2.1.2 Positive Feedback (PFB)	7
     2.2 ALL TYPES OF OSCILLATORS	9
     2.2.1 Ring Oscillator	10
     2.2.2 LC-Tank Oscillator	13
     2.3 VOLTAGE-CONTROLLED OSCILLATOR	17
     2.4 THE PARAMETERS OF VCOS	18
     2.4.1 Center Frequency	18
     2.4.2 Tuning Range	18
     2.4.3 Tuning Linearity	19
     2.4.4 Output Amplitude	20
     2.4.5 Power Dissipation	20
     2.4.6 Supply and Common-Mode Rejection	21
     2.4.7 Output Signal Purity	21
     2.5 PHASE NOISE	21
     2.5.1 Definition of Phase Noise	22
     2.5.2 Leeson’s Linear Time-Invariant Phase Noise Model	24
     2.5.3 Hajimiri’s Linear Time-Variant Phase Noise  Model	26
     2.5.4 Rael-Abidi’s Phase Noise Model	32
     2.5.5 Noise Sources	34
I.	Thermal noise	34
II.	Flicker noise	37
     2.6 ON-CHIP INDUCTOR RESEARCH	38
     2.6.1 Inductor Categories	39
     2.6.2 Loss Mechanisms of Inductor	40
I.	Metal Loss	40
II.	Substrate Loss	42
III.	Definitions of Inductor Parameters	42
     2.7 VARACTOR	43
     2.7.1 P-N Junction Varactor	43
     2.7.2 MOS Varactor	44
I.	Accumulation-mode MOS varactor	46
II.	Inversion-mode MOS varactor	47
Chapter 3…	50
         A Complementary Colpitts Voltage Controlled Oscillator Implemented with Ring Inductor	50
     3.1 INTRODUCTION	50
     3.2 OPERATION PRINCIPLE OF THE VCO	53
I.	Colpitts structure	53
II.	Colpitts open loop:	53
III.	Oscillator frequency and Oscillator condition	54
IV.	Complementary Colpitts Oscillator  structure	55
V.	Complementary Colpitts Oscillator structure	55
     3.3 THE RELATIONSHIP BETWEEN HARMONICS AND CIRCUIT	60
     3.4 EXPERIMENTAL RESULTS	63
Chapter 4….	67
          Dual Band CMOS Complementary Colpitts Voltage Controlled Oscillator	67
     4.1 Introduction	67
     4.2 The back-gate coupling topology	68
     4.3 Differentially-tuned varactor	70
     4.4 Operation principle of the dual band VCO	71
     4.5 Experimental results	76
Chapter 5…	……82
          The Circular Transmission Lines Apply Half-quarter Distributed Voltage Controlled Oscillator	82
     5.1 Introduction	82
     5.2 Operation principle of the VCO	83
     5.3Traveling wave osillations	84
     5.4 Experimental results	85
Chapter 6  Conclusion	90
References…	….92

                                

[1]B. Razavi, RF microelectronics, Prentice Hall PTR, 1998.
[2]B. Razavi, Design of analog CMOS integrated circuits, McGraw-Hill,2001.
[3]D. B. Leeson, “A simple model of feedback oscillator noise spectrum,” Proc. IEEE, vol. 54, pp. 329-330, 1966.
[4]K. A. Kouznetsov and R. G. Meyer, “Phase noise in LC oscillators,” IEEE J. Solid-State Circuits, vol. 35, no. 8, pp. 1244–1248, 2000.
[5]J. W. M. Rogers, J. A. Macedo, and C. Plett, “The effect of varactor nonlinearity on the phase noise of completely integrated VCOs,” IEEE J. of Solid-State Circuits, vol. 35, no. 9, pp. 1360–1367, 2003.
[6]J. J. Rael and A. A. Abidi, “Physical processes of phase noise in differential LC oscillators,” in IEEE Custom Int. Circuit Conf., 2000.
[7]E. Hegazi, H. Sjoland, and A. Abidi, “A filtering technique to lower oscillator phase noise,” in IEEE Solid-State Circuits Conf., Digest of Technical Papers, pp. 364–365, 2001.
[8]C. Samori, A. L. Lacaita, A. Zanchi, S. Levantino, and F. Torrisi, “Impact of indirect stability on phase noise performance of fully-integrated LC tuned VCOs,” in IEEE European Solid-State Circuits Conf., pp. 202–205, 1999.
[9]S. Levantino, C. Samori, A. Bofanti, S. L. J. Gierkink, A. L. Lacaita, and V. Boccuzzi, “Frequency dependence on bias current in 5-GHz CMOS VCOs: impact on tuning range and flicker noise upconversion,” IEEE J. Solid-State Circuits, vol. 37, no. 8, pp. 1003–1011, 2002.
[10]Hajimiri and T. H. Lee, “A general theory of phase noise in electrical oscillators,” IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179–194, 1998.
[11]T. H. Lee and A. Hajimiri, “Oscillator phase noise: a tutorial,” IEEE J. Solid-State Circuits, vol. 35, no. 3, pp. 326–336, 2000.
[12]J. P. Carr and B. M. Frank,”A 38 GHz accumulation MOS differentially tuned VCO design in 0.18-um CMOS,” Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. pp.170 – 173 .Topical Meeting on Jan 2006.
[13]A. Hajimiri and T. Lee, “Design issues in CMOS differential LC oscillators,” IEEE J. Solid-State Circuits, vol. 34, no. 5, pp. 717–724, May 1999.
[14]R. Aparicio and A. Hajimiri, “A noise-shifting differential Colpitts VCO,” IEEE J. Solid-State Circuits, vol. 12, no. 12, pp. 1728–1736, Dec. 2002.
[15]C.-Y. Cha and S.-G. Lee “A complementary Colpitts oscillator in CMOS technology,” IEEE Trans. Microw. TheoryTech., vol. 53, no. 3, pp. 881 - 887, Mar. 2005.
[16]S.-H. Lee, Y.-H. Chuang, S.-L. Jang and C.-C. Chen, ” Low-phase noise Hartley differential CMOS voltage controlled oscillator,” IEEE Microw. Wireless Compon. Lett., pp. 145-147, Feb. 2007.
[17]W. Andress and D. Ham, “Standing wave oscillators utilizing wave adaptive tapered transmission lines,” in IEEE Symp. VLSI Circuits Dig. Tech. Papers, Jun. 2004, pp. 50–53.
[18]A. Kral, and A. A. Abidi, “RF-CMOS oscillators with switched tuning,” in Proc. IEEE CICC, May 1998, pp. 555–558.
[19]S.-M. Yim and K. K. O, “Demonstration of a switched resonator concept in a dual-band monolithic CMOS LC-tuned VCO,” in Proc. IEEE CICC, May 2001, pp. 205–208.
[20]M. Tiebout, “A CMOS fully integrated 1 GHz and 2 GHz dual band VCO with a voltage controlled inductor,” ESSCIRC, pp.799 – 802, 2002.
[21]Z. Li and K. K. O, “A low-phase-noise and low-power multiband CMOS voltage-controlled oscillator,” IEEE J. Solid-State Circuits, vol. 40, no. 6, pp. 1296 - 1302, 2005.
[22]M. A. Do, R. Y. Zhao, K. S. Yeo and J. G. Ma, “New wideband/ dualband CMOS LC voltage controlled oscillator. “ IEEE Proc. Circuits, Devices and Systems, Vol. 150 , pp. 453-459 Oct. 2003.
[23]H. Veenstra and E. van der Heijden, “A 35.2–37.6GHz LC VCO in a 70/100GHz fT/fmax SiGe technology,” in ISSCC Dig. Tech. Papers, pp. 394–395, 2004.
[24]M. Zannoth, B. Kolb, J. Fenk, and R. Weigel, “A fully integrated VCO at 2GHz,” IEEE J. of Solid-State Circuits, vol. 33, Issue 12, pp. 1987 – 1991, 1998.
[25]N. H. W. Fong, J.-O. Plouchart, N. Zamdmer, D. Liu,L. F. Wagner, C. Plett and N. G. Tarr, ”A 1V 3.8-5.7GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology,” IEEE Trans. Micro. Theory Tech., vol.51, no.8, pp. 1952-1959, 2003.
[26]H. Moon, S. Kang, Y. T. Kim, and K. Lee, “A fully differential LC-VCO using a new varactor control structure,” IEEE Micro. Wireless Comp. Lett., vol. 14, no. 9, pp. 410 – 412, 2004.
[27]Neric H. W. Fong, Jean-Olivier Plouchart, N. Zamdmer, D. Liu,L. F. Wagner, C. Plett and N. G. Tarr, ”A 1V 3.8-5.7GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology,” IEEE Trans. Microwave Theory Tech., vol.51, pp. 1952-1959, Aug. 2003.
[28]H. Moon, S. Kang, Y. T. Kim, and K. Lee,” A fully differential LC-VCO using a new varactor control structure,” IEEE Microwave and Wireless Components Letters, vol.14,pp.410 – 412,Sept. 2004.
[29]J. Rogers, J. Macedo, and C. Plett, “The effect of varactor nonlinearity on phase noise of completely integrated VCOs,” IEEE J. Solid-State Circuits, vol. 35, pp. 1360–1367, Sept. 2001.
[30]S.-L. Jang, S.-H. Lee, C.-C.Chiu, and Y.-H. Chuang.” A 6 GHz low power differential VCO,” Microwave and Optical Technology Lett., pp.76-79, Jan. 2007.
[31]L. Jia, J. G. Ma, K. S. Yeo, X. P. Yu, M. A. Do and W. M. Lim, “A 1.8-V 2.4/5.15-GHz dual-band LC VCO in 0.18-um CMOS technology,” IEEE Microwave Wireless Compon. Lett., vol. 16, no. 4, pp. 194–196, Apr. 2006.
[32]H. Shin, Z. Xu, and M. F. Chang, “A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology,” in IEEE RFIC Symp. Jun. 2002, pp. 71–74.
[33]M. Tiebout, “A CMOS fully integrated 1 GHz and 2 GHz dual band VCO with a voltage controlled inductor,” ESSCIRC, pp.799 – 802, 2002.

全文公開日期 2009/07/26 (校內網路)
全文公開日期本全文未授權公開 (校外網路)
全文公開日期 2017/07/26 (國家圖書館：臺灣博碩士論文系統)

簡易檢索 / 詳目顯示

相關論文