本研究主要進行銫鉛溴鈣鈦礦發光二極體研究。在此元件結構中，電子與電洞將注入銫鉛溴鈣鈦礦薄膜進行幅射再結合以做為發光層；電子傳輸層則使用自行合成的氧化鋅奈米粒子；電洞注入層與傳輸層則分別使用聚(苯乙烯磺酸)陰離子摻雜的聚(3,4-亞乙基二氧噻吩)與聚(N-乙烯基咔唑)。在銫鉛溴鈣鈦礦薄膜的製備上，以一步驟溶液旋塗沉積法進行；此外，在進行溴化銫鉛鈣鈦礦薄膜製備時，經由添加聚乙二醇與調整前驅物組成比例改善薄膜性質，並藉由紫外光-可見光吸收光譜儀、微區螢光光譜儀與X-光繞射圖譜進行光學、光電性質以及結構分析。在光致激發螢光光譜量測，其激發光約在527 nm，而所組裝完成的銫鉛溴鈣鈦礦發光二極體，在量測元件性能後，可知當前驅物溶液中的溴化銫與溴化鉛以莫爾比例為3：2，並加入0.005 g 的聚乙二醇，可獲得在4.5 V偏壓下，電流密度為560.68 mA/cm2與0.18 cd/m2輝度值，電流密度與輝度值。為了製備出不同發光波段的發光二極體，將前驅物溶液中部分溴化物替換成碘化物，即可以溶液旋塗沉積法製備出銫鉛溴碘鈣鈦礦薄膜。其光致激發螢光可調整至527 nm~690 nm。同樣地，將銫鉛溴碘鈣鈦礦薄膜製備組裝成發光二極體，並探討其發光二極體特性。

In this work, we focused on the studies of cesium lead bromide (CsPbBr3) perovskite light-emitting diode (LED). In the architecture of CsPbBr3 LED, CsPbBr3 thin film can be regarded as emission layer because electrons and holes will inject into CsPbBr3 thin film for radiation recombination; otherwise, home-made zinc oxide (ZnO) nanoparticles synthesized by wet chemical reaction was employed as electron transport layer (ETL); poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and poly(N-vinylcarbazole) (PVK) were used as hole injection layer (HIL) and hole transport layer (HTL), respectively. For preparation of CsPbBr3 thin film, one-step spin coating was employed. The properties of CsPbBr3 thin film were modulated by the molar ratio of precursors and the amount of additive, poly(oxyethylene) (PEO). The optical, optoelectronic and structural analyses were conducted by UV-visible absorption spectroscopy, micro-photoluminescence (-PL) and X-ray diffraction pattern (XRD), respectively. From -PL spectrum, we could obtain the emission of CsPbBr3 thin film was around 527 nm. When CsPbBr3 thin film was assembled as LED, the current density and brightness of CsPbBr3-LED under 4.5 V bias could achieve 560.68 mA/cm2 and 0.18 cd/m2 when the molar ratio of CsBr to PbBr2 and PEO addition amount were 3 : 2 and 0.005 g, respectively. To adjust the emission wavelengths of perovskite LED, part of bromide precursor was replaced by iodide precursor. CsPbBr3-xIx thin film could be prepared by spin coating and the emission wavelengths could cover 527~690 nm. Finally, CsPbBr3-xIx thin films were assembled as LED for analyzing the performance of electroluminescences.

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