本實驗以適用於發光二極體的三元砷化鋁鎵(100)晶片系統，以熱蒸鍍法沉積金鈹合金於砷化鋁鎵晶片上，並使用快速升降溫爐及傳統管狀爐作熱處理，本論文以研究此晶片系統之金屬層的組成相為方向。
X光繞射分析可知，剛沈積後金屬薄膜層為金與低溫金鈹(Au3Be)兩合金相的混合組織；經快速升降溫爐450℃及500℃熱處理及傳統管狀爐520℃熱處理時，此時金屬薄膜層之相結構即轉變成為金、鈹砷化合物(BeAsx)及高溫金鈹相。
高解析度電子顯微鏡分析於傳統管狀爐520℃熱處理及快速升降溫爐500℃熱處理試片，計算砷化鋁鎵基材的晶格常數於(111)的平面方向為5.63Å，鈹砷化合物(BeAsx)的晶格常數為5.34 Å的結果與分析式電子顯微鏡擇區繞射影像、JCPDS卡資料相符，驗證其實驗結果的正確性。分析式電子顯微鏡詳細的分析鈹砷化合物及高溫金鈹相之擇區繞射影像，經由不同晶帶軸方向來證明與砷化鋁鎵基材有相對應的(200)方向關係。
電性量測分析結果，發現試片經快速升降溫爐400℃、450℃及500℃的熱處理與傳統管狀爐485℃及520℃的熱處理，有較低的順向偏壓值(VF)為1.33V至1.37V，對應其順向偏壓值在經快速升降溫爐300℃及350℃熱處理試片中，有著明顯較高的數值產生。

The object of this thesis was to study the metallization layers of AuBe alloy on P-type AlGaAs(100) wafers. The Au/AuBe/Au layers were deposited onto the AlGaAs wafers by a thermal evaporation method. After the evaporation process the AlGaAs wafers were annealed in either traditional tube furnace or rapid thermal annealing (RTA) furnace for the alloying processes.
The XRD analysis in the Au/AuBe/Au layers on the AlGaAs wafers indicated that the metal layers are mixed with Au and Au3Be phases in the as-deposited condition. In the traditional annealing process at 520 oC and RTA processes at 450 oC and 500 oC find new compound which is BeAs and AuBe phase in high temperature.
In the HRTEM analyse in the traditional annealing process at 520 oC and RTA 500 oC, it calculate AlGaAs lattic constant is 5.63 Å and BeAs compound lattic constant is 5.34 Å on (111) level direction, Compare with JCPDS card and verify the exactness of its experimental result is the same.
In the TEM study we found that the microstructure mophologies in BeAs and AuBe structure diffraction imaging in different direction, Identification and AlGaAs sill have corresponding (200) direction relations.
For I-V curve tests, the corresponding voltages at constant applied current for the wafers annealed in the rapid thermal processes at 400 oC、450 oC and 500 oC and are annealed in the traditional tube furnace at 485 oC and 520 oC slightly lower value that is from 1.33 V to 1.37 V, while the corresponding voltages are extremely high for the wafers annealed in RTA at 300 oC and 350 oC.

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