本文應用加工固定切削深度之偏移加工法，進行單晶矽梯形凹槽之加工，其以每切削層在固定加工深度下進行一切削道次加工再向右偏移進行第二切削道次加工完成一偏移加工，如要擴充梯形凹槽的寬度，則可再向右偏移切削完成第三切削道次加工。依上述方法可再增加加工層數，使其增加加工寬度外亦可增加加工深度。本文亦應用比下壓能觀念所建立的估算切削力及下壓力公式，模擬出偏移加工梯形凹槽之第一切削層的第一切削道次及向右偏移的第二切削道次之下壓力以及切削力。本文先以比下壓能的公式，用較小的探針尺寸，計算出在固定加工深度下之偏移加工各切削道次之切削力及下壓力。再運用分子靜力學三維準穩態奈米切削模擬模式，依相同的較小探針尺寸及切削深度，模擬第一切削層偏移加工法所得第一切削道次跟第二切削道次之下壓力及切削力，再將兩種模擬方法所得之切削力及下壓力進行比較，以驗證比下壓能公式所得之偏移加工法的切削力及下壓力的合理性。本文之分子靜力學三維準穩態奈米切削模擬模式其除計算固定加工深度各切削道次的下壓力及切削力，進一步計算等效應力與等效應變，以及計算出被切削單晶矽工件所提升之溫度，本文進而分析被切削單晶矽工件的溫度分佈。此外本文又探討固定下壓力加工出深度約20nm之T型奈米流道，本文提出採用比下壓能觀念在橫向切削道次與縱向道次交界處，在橫向切削道次之中間在使用相同固定下壓力下，在縱向切削道次方向下壓加工工件材料，用比下壓能方法及CAD軟體模擬使其移除部分體積，形成一個具有下凹深度的下凹型狀。再模擬每一橫向切削層之加工切削深度及不同橫向切削層Ｔ型奈米流道交界之下凹深度。經由模擬結果，發現T型奈米流道之橫向切削層及縱向切削層交界之下凹深度約等於再增加一橫向切削層所增加的切削深度。本文並利用加工Ｔ型奈米流道到第五切削層的交界處所量測出下凹深度之實驗結果與模擬結果相比較，發現實驗之下凹深度與模擬結果差異很小，驗證本文所提出的用比下壓能方法模擬估算Ｔ型奈米流道各切削層橫向切削道次與縱向切削道次的交界處產生之下凹深度方法為可行的。

The paper applies offset cutting method to fabricate single-crystal silicon trapezium groove at a fixed cutting depth. Cutting of 1st cutting path is carried out on each cutting layer at a fixed cutting depth, then cutting of the 2nd cutting path is carried out by making rightward offset the cutting tool, thus competing a offset cutting cycle. If it is required to broaden the width of trapezium groove, rightward offset the cutting tool can be made for cutting to complete cutting of the 3rd cutting path. Using the above method, the number of cutting layers can be increased, and their cutting width and cutting depth can thus be increased as well. The paper also applies the equations for estimating cutting force and down force, both established by specific down force energy (SDFE) concept, and simulates the down force and cutting force for the 1st cutting path during offset cutting of trapezium groove on the 1st cutting layer, as well as those for rightward offset cutting of the 2nd cutting path. First of all, considering a smaller size probe, SDFE equation is used to calculate the cutting force and down force for such offset cutting method at a fixed cutting depth in this paper. After that, three-dimensional quasi-steady molecular statics nanocuting simulation model is used to simulate acquisition of down forces and cutting forces in the 1st and 2nd cutting paths using offset cutting method for cutting on the 1st cutting layer by the same smaller sized probe and cutting depth. Comparison is made between the cutting forces and down forces obtained from the above mentioned two methods, in order to prove the rationality of using SDFE equation to acquire cutting force and down force of offset cutting method. The three-dimensional quasi-steady molecular statics nanocuting simulation model not only calculates the down force and cutting force of each cutting path at a fixed cutting depth, but also calculates equivalent stress and equivalent strain, as well as the increased temperature of the cutted single-crystal silicon workpiece. The paper further analyzes the temperature distribution of the cutted single-crystal silicon workpiece. Besides, the paper explores the T-shaped nanochannel at a cutting depth of around 20nm at a fixed down force. This paper proposes employing SDFE concept at the junction between horizontal cutting path and vertical cutting path, using the same fixed down force in the middle of horizontal cutting path, and downpressing and cutting the workpiece material in the direction of vertical cutting path. SDFE method and CAD software are used to simulate the removing volume, thus forming a depressed shape with a depressed depth. SDFE equation and CAD software are used to simulate the cutting and cutting depth of each horizontal cutting layer and the depressed depths at the junction of T-shaped nanochannels on different horizontal cutting layers. As observed from the simulation results, the cutting depth at the junction between horizontal cutting layer and vertical cutting layer of T-shaped nanochannel is almost equivalent to an increased cutting depth on an additional horizontal cutting layer. The paper also compares the experimental results and simulation results of the depressed depths measured at the junction of T-shaped nanochannel being cutted up to the 5th cutting layer. Hence, the paper’s proposal of using SDFE method to simulate and estimate the depressed depth produced at the junction between horizontal and vertical cutting paths on each cutting layer of T-shaped nanochannel, is proved to be feasible.

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