研究生: |
洪偉智 Chih-Wei Hung |
---|---|
論文名稱: |
以混成式電漿化學氣相沉積系統製備類鑽碳薄膜及其應用之研究 Growth and Application of Diamond-like Carbon thin film by Hybrid Plasma Chemical Vapor Deposition System |
指導教授: |
柯文政
Wen-Cheng Ke |
口試委員: |
陳衛國
Wei-Kuo Chen 黃柏仁 Bohr-Ran Huang |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2019 |
畢業學年度: | 107 |
語文別: | 中文 |
論文頁數: | 102 |
中文關鍵詞: | 類鑽碳 、硬度 |
外文關鍵詞: | Diamond-like carbon, Hardness |
相關次數: | 點閱:269 下載:0 |
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本研究利用自組裝混成式化學氣相沉積系統(Hybrid Plasma CVD, HPCVD),於矽基板成長類鑽碳膜,並調整甲烷/氫氣比例流量、工作壓力、射頻電漿瓦數、氬氣流量等製程參數,製備高硬度類鑽碳膜。當甲烷/氫氣比例為6/94 sccm、工作壓力為2 torr、ECR/RF為625/250 W下成長30分鐘,利用奈米壓痕系統量測,得知薄膜硬度為10.7 GPa。研究中除了利用奈米壓痕系統量測薄膜硬度,同時利用Raman光譜分析類鑽碳膜內部之sp3及氫含量,利用兩個不同波長之雷射光Raman系統,量測類鑽碳膜之D-band與G-band,圖譜經高斯擬合分析後,計算得到G-band之分散率(Disp(G)),再將Disp(G)帶入由Ferrari提出之經驗公式計算得知薄膜內部sp3含量為64 %;利用Ferrari提出之另一項經驗公式,將DLC Raman圖譜在1050 cm-1及1800 cm-1間之連線斜率及G-band強度帶入分析,可得知薄膜內部氫含量約為43 %。研究中另外嘗試將類鑽碳膜作為矽基板之鈍化層,藉由少數載子生命週期判斷類鑽碳膜之鈍化效果優劣,當甲烷/氫氣比例為10/90 sccm、工作壓力為1 torr、ECR/RF為625/150 W下成長之類鑽碳膜厚度為100 nm時,類鑽碳膜之載子生命週期為 9.85 us。未來可進一步運用於矽基太陽能電池之鈍化層。
In this study, a home made hybrid chemical vapor deposition system (Hybrid Plasma CVD, HPCVD) was used to grow a diamond-like carbon film on silicon substrate, and prepare high hardness diamond-like carbon film by adjusting the methane/hydrogen ratio flow, working pressure, radio frequency power and argon flow rate, etc. The film hardness was 10.7 GPa measured by a nanoindentation apparatus, which prepared under 6/94 sccm methane/hydrogen flow rate, 2 torr working pressure, and 625/250 W ECR/RF power, and 30 minutes growth time. In the hardness analysis, not only the nanoindentation detection, the content of sp3 and hydrogen content in diamond-like carbon film is also related to the hardness of the diamond-like carbon film, which determined by Raman spectrum. In this study, we using two different wavelengths of the laser Raman system to measure G-band and D-band, which based on the empirical formula proposed by Ferrari in 2005. After Gaussian fitting G-peak by D-band and G-band, Disp(G) can be calculated using empirical formula. The dispersion rate of G is brought into the formula to figure out the internal sp3 content of the film is 64%, and the hydrogen content is obtained by the slope between the intensity of 1050 cm-1 and 1800 cm-1 peak in Raman spectroscopy. The hydrogen content of the film is about 43% after calculating the empirical formula with the slope. We attempt to use the diamond-like carbon film as the passivation layer on silicon substrate in another chapter of this study. The minority carrier lifetime is the key to determine the passivation effect of the diamond-like carbon film, and we try to increase the carrier lifetime of passivation layer by optimizing methane/hydrogen ratio flow and growth time. As our experimental results, the film with 100nm thickness has the highest carrier life cycle measured in quasi-steady state, 9.85 us, which is prepared under 10/90 sccm methane/hydrogen ratio, 1 Torr working pressure, and 625/150 W ECR/RF power.
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