本研究探討碳氮化硼複合超奈米鑽石於不同結構之矽奈米線上作為超級電容器之應用，並探討退火後處理對於此結構之影響。內文將分為三個部分。第一部分分別探討超奈米鑽石、碳氮化硼及碳氮化硼複合超奈米鑽石於矽基板上之電化學感測，並探討以溫度800℃之退火後處理對此三種結構之影響，本部分較佳之參數為(BCN(1:2)-NUNCD_(10 min)/Si)N8其比電容值為10.007(F/g)。
第二部分將第一部分之矽基板改成矽奈米線，探討3D結構對電化學感測之影響，並探討以溫度800℃之退火後處理對此三種結構之影響: Type I: NUNCD/SiNWs、Type II: BCN/SiNWs、Type III: BCN-NUNCD/SiNWs；接著為了提升其電化學感測特性，將矽奈米線先與超奈米鑽石做結合，再跟碳氮化硼複合超奈米鑽石做結合形成BCN-NUNCD/NUNCD/SiNWs，並探討以溫度800℃之退火後處理對此結構之影響。在此部分發現利用矽奈米線結構，皆可以提升超奈米鑽石、碳氮化硼及碳氮化硼複合超奈米鑽石作為超級電容器之重量比電容值，而使用矽奈米線複合奈米鑽石結構可以更加有效的提升重量比電容值，並利用氮氣退火後處理，可發現電容值從18.93提升至123.91(F/g)，其充放電循環穩定性可增加473.91%。表明此種BCN-NUNCD/NUNCD/SiNWs新型複合結構具有優異之循環穩定性。
第三部分則在探討矽奈米線做磷摻雜後之分析，並將第二部分較好之結果套用於矽奈米線做磷摻雜之基板上探討其超級電容器之特性。在此部分發現通過磷摻雜後皆會使其循環穩定性增加，本部分較佳之參數為(BCN(1:1)-NUNCD_(7.5 min)/NUNCD_(12.5 min)/PSG_(975℃ 30 min )-SiNWs_(20 min))N8其比電容值為33.193(F/g)，其充放電循環穩定性可增加450%。
關鍵字：矽奈米線、磷、超奈米鑽石、碳氮化硼、超級電容器

This study is divided into three main parts. In the first part, we combined two materials: nanocrystalline diamond (NUNCD) and Boron Carbon Nitride (BCN) on silicon-Based, the optimal parameter in this section is (BCN(1:2)-NUNCD_(10 min)/Si)N8, which exhibits a specific capacitance of 10.007 (F/g).
The second part , we combined two materials: nanocrystalline diamond (NUNCD) and Boron Carbon Nitride (BCN) on silicon nanowires ,forming four types of novel composite structures: (i) NUNCD/SiNWs, (ii) BCN/SiNWs, (iii)BCN-NUNCD/SiNWs and(iv)BCN-NUNCD/NUNCD/SiNWs for supercapacitors. This study found that the silicon nanowires and ultra-nanodiamonds combined silicon nanowire can effectively improve the capacitance value of ultra-nanodiamonds, boron Carbon Nitride and ultra-nanodiamonds combined boron Carbon Nitride. After annealing the ultra-nanodiamonds combined boron Carbon Nitride on the ultra-nanodiamonds combined silicon nanowire substrate with nitrogen for 800 C, it can be found that the capacitance value is increased from 18.93 to 123.91 (F/g), and the charge-discharge cycle stability is improved 473.91%.
The third part, we found that the phosphorus doping can enhances cycle stability across all cases. The optimal parameter in this section is (BCN(1:1)-NUNCD_(7.5 min)/NUNCD_(12.5 min)/PSG_(975℃ 30 min )-SiNWs_(20 min))N8, which exhibits a specific capacitance of 33.193(F/g), and the charge-discharge cycle stability is improved 450%.

Keywords: Silicon nanowires, Phosphorus, Ultra-nanocrystalline diamond, Boron Carbon Nitride, Supercapacitor

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