本文主要在探討鋅鈮鋯鈦酸鉛鐵電陶瓷系統的電性和疲勞特性。以鈦鋯酸鉛為主，添加入不同含量的鋅鈮酸鉛，控制材料的相變化以解決此材料在超音波倒車雷達上溫度係數的問題，並探討不同成 份下的介電、鐵電、壓電和疲勞的特性，進而選出適合應用於超音波感測器的材料。
目前超音波雷達元件，所面臨之主要問題在於各種特性之溫度係數變化，元件操作正切損耗之控制，材料可靠度與抗疲勞性能之掌控等。以超音波倒車雷達規格而言，在-35℃~80℃的溫度範圍，每度的電容值變化量應小於6 pF，因此本實驗藉由添加居里遷移劑（鈦鋯酸鉛），配製不同成份的鋅鈮鋯鈦酸鉛鐵電陶瓷系統，抑制相變化來降低電容的溫度係數。研究結果顯示，溫度係數可以降低至0.036 pF/℃。
由燒結溫度和密度量測可以得知，隨著鋅鈮酸鉛的添加量越多，材料內部ZnZr、、和 2NbTi• 的晶格缺陷也會越多，這將促進燒結速率和緻密化；由X光繞射分析所知，鋅鈮鋯鈦酸鉛系統中，同時存在菱方晶與正方晶，且鋯鈦酸鉛成份較多時，偏向正方晶結構，且正方性（c/a）會變大，造成鐵電轉順電相更困難，居里溫度因而提高。在壓電性量測方面，在鋅鈮酸鉛含量為20 mole％時，試片同時存在菱方晶與正方晶相，且晶粒大小(2.3 μm)具有最大的機電偶合係數(71％)。
鐵電與疲勞特性量測結果顯示，鋅鈮鋯鈦酸鉛系統都具有相當大的殘留極化值(40 μC/cm2)和低的矯頑電場(11 kV/cm)，換句話說，此材料系統很軟，只需要非常小的電場即可將極化隨著電場方向而移動。對於疲勞測試而言，此材料的殘留極化值會先下降，接著矯頑電場才會上升，主要原因可能來自於電極界面破壞或剝離，使可作用電場降低，殘留極化值先下降。鋯鈦酸鉛含量多的系統，材料內部存在較多的正方晶，偶極矩越不容易隨著電場而轉動，極化較困難，使得矯頑電場變得越大，容易產生電域釘鎖的現象，疲勞提早發生。
综合上述實驗結果，了解鋅鈮鋯鈦酸鉛擁有高的壓電係數和低的溫度係數，只需要小的電場即可將極化轉動，且可以在1150℃燒結完成，節省能源，因此可作超音波元件，用來接收和發射超音波的訊號。但是因為其品質因子較小，較適合用在低功率的感測器和致動器等元件材料。

The x(Pb(Zn1/3Nb2/3 )O3 ) + (1-x)(Pb(Zr0.52Ti0.48 )O3) (PZNZT) ceramics, which were used in ultrasonic radar system, were investigated to improve the characteristics of the temperature coefficient of capacitance (TCC), piezoelectric and fatigue properties. Various compositions (x=0~0.5) of PZNZT systems were designed to control the phase transformation and relaxor behavior, and to reduce the TCC at the temperature range from 25℃ to 80℃. We found that PZNZT system at the composition of x=0.1 which has high curie temperature (384℃) can reduce the TCC to 72 ppm/℃, but the sintering temperature of the specimen is higher than 1150℃. In electrical properties, the composition of x=0.2 has a high electrical mechanical coupling coefficient of 71％, high remant polarization (Pr) of 40 μC/cm2 and low coercive field (Ec) of 11 kV/cm. Specimens at this composition show higher fraction of the tetragonal phase, and it will make domain hard to switch and induce larger Pr reduction than the specimens containing more rhombohedra phase (x=0.4-0.5) after fatigue tests. In these experiments, we know that PZNZT system having high kp, low TCC and low Qm, is suitable to use in low power ultrasonic sensor.

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