本研究為有機發光二極體(Organic Light-Emitting Diode, OLED)在製程封裝上應用低溫電漿輔助化學氣相沉積法(Plasma-Enhanced Chemical Vapor Deposition, PECVD)來製備SiOxNy之膜材，來防止水氣與氧氣的入侵，達到延長OLED元件的發光壽命。利用高密度的電感式耦合電漿源(Inductively-Coupled Plasma, ICP)於聚醚砜酯(Polyethersulfone, PES)與silicon及玻璃基板鍍上薄膜，進而探討製程參數與1. 鍍膜均勻度2. 鍍膜厚度3. 水氣滲透之間的關聯性，其中研究製程參數包括1. 腔體溫度2. 六甲基二矽氧烷流量(Hexamethyldisiloxane, HMDSO)3. Ar流量4. O2流量5. NH3流量6. 鍍膜位置高度7. 電漿功率8. 腔體壓力。本研究採用單一品質分析田口法中的 直交表來規劃實驗，來達到最少的實驗次數以進行鍍膜製程。實驗結束後進行變異數分析與訊號雜訊比來探討各個控制因子對品質特性的影響程度，並得到單一最佳化結果，再利用理想解類似度順序偏好法與灰關聯分析找出各個最佳水準組合，進而利用倒傳遞類神經結合Levenberg-Marquardt演算法模擬並建構預測系統，最後再利用田口法確認實驗與信心區間計算並驗證實驗結果。本研究在多品質最佳化設計後，單層膜材最佳水氣滲透率達到 ，最大鍍膜厚度可達到420nm，而最快速率可達到21nm/min，高於業界標準規格(10nm/min)110%，且鍍膜均勻度之誤差可達到2.9%。

This study applied low temperature PEVCD (Plasma-Enhanced Chemical Vapor Deposition) in the preparation of SiOxNy film in OLED (Organic Light-Emitting Diode) encapsulation process to prevent the intrusion of water vapor and oxygen to prolong the light-emitting service life of OLED components. The high density ICP (Inductively-Coupled Plasma) was used to deposit films on the PES (Polyethersulfone), silicon and glass substrate. The correlation between the process parameters and the followings were discussed: 1) coating film uniformity; 2) coating film thickness; 3) WVTP. The process parameters under research included: 1) cavity temperature; 2) HMDSO (Hexamethyldisiloxane) flow; 3) Ar flow; 4) O2 flow; 5) NH3 flow; 6) coating film position height; 7) electro-plasma power; and 8) cavity pressure.This study used the orthogonal array of the Taguchi method of the single quality analysis to plan the experiments and conduct the coating process with the least experimental times. After the experiments, the variance analysis was conducted, and the S/N ratio was used to discuss the impact of various control factors on quality characteristics, in order to obtain the single optimization result. Next, using the ideal solution similarity degree order of preferenceapproach and grey relational analysis, this study determined the optimum level combinations before simulating and establishing the prediction system using the back propagation neural network and the Levenberg-Marquardt algorithm. Finally, the Taguchi method confirmation experiments and confidence level were used to calculate and verify the experimental results.After the multi-quality optimization design, the optimum WVTR (Water Vapor Transmission Rate) of the single layer film can be 0.02g/m2/day. The maximum coating film thickness could be up to 420nm, and the fasted speed could be up to 21nm/min, being higher than the industrial standard specifications by 110%. Meanwhile, the coating film uniformity error can be 2.9%.

[1] M. C. Lin, C. H. Tseng, L. S. Chang, and D. S. Wuu, “Characterization of the silicon oxide thin films deposited on polyethylene terephthalate substrates by radio frequency reactive magnetron sputtering”, Thin Solid Film, Vol. 515, No. 11, pp. 4596-4602(2007).
[2] D. S. Wuu, W. C. Lo, L. S. Chang, and R. H. Horng, “Properties of SiO2-like barrier layers on polyethersulfone substrates by low-temperature plasma-enhanced chemical vapor deposition”, Thin Solid Film, Vol. 468, No. 1-2, pp. 105-108( 2004).
[3] A. Bieder, A. Gruniger, and Ph. Rudolf von Rohr, “Deposition of SiOx diffusion barriers on flexible packaging materials by PECVD”, Surface & Coatings Technology, Vol. 200, No. 1-4, pp. 928-931(2005).
[4] J. H. Lee, C. H. Jeong, J. T. Lim, N. G. Jo, S. J. Kyung, and G. Y. Yeom, “Properties of SiOxNy thin film deposited by low temperature plasma enhanced chemical vapor deposition using TEOS/NH3/O2/N2 gas mixtures”, Surface & Coatings Technolog, Vol. 200, No. 1-4, pp. 680-685(2005).
[5] D. S. Wuu, W. C. Lo, C. C. Chiang, H. B. Lin, L. S. Chang, R. H. Horng, C. L. Huang, and Y. J. Gao, “Plasma deposited silicon oxide barrier films on polyethersulfone substrates temperature and thickness effects”, Surface & Coatings Technology, Vol. 197, No. 2-3, pp. 253-259(2005).
[6] D. S. Wuu, W. C. Lo, C. C. Chang, H. B. Lin, L. S. Chang, R. H. Horng, C. L. Huang, and Y. J. Gao, “Water and oxygen permeation of silicon nitride films prepared by plasma-enhanced chemical vapor deposition”, Surface & Coatings Technology, Vol. 198, No. 1-3, pp. 114-17(2005).
[7] C. C. Chiang, D. S. Wuu, H. B Lin, Y. P. Chen, T. N. Chen, Y. C. Lin, C. C. Wu, W. C. Chen, T. H. Jaw, and R. H. Horng, “Deposition and permeation properties of SiNx/parylene multi-layers on polymeric substrates”, Surface & Coatings Technology, Vol. 200, No. 20-21, pp. 5843-5848(2006).
[8] T. N. Chen, D. S. Wuu, C. C. Wu, C. C. Chiang, H. B. Lin, Y. P. Chen, and R. H. Horng, “Effects of plasma pretreatment on silicon nitride barrier films on polycarbonate substrates”, Thin Solid Film, Vol. 514, No. 1-2, pp. 188-192(2006).
[9] T. N. Chen, D. S. Wuu, C. C. Wu, C. C. Chiang, H. B. Lin, Y. P. Chen, and R. H. Horng, “High-performance transparent barrier films of SiOx/SiNx stacks on flexible polymer substrates”, Journal of The Electrochemical Society, Vol. 153, No. 10, pp. 244-248(2006).
[10] Kunio Akedo, Atsushi Miura, Hisayoshi Fujikawa, and Yasunori Taga, “Flexible OLEDs for automobiles using SiNx/CNx:H multi-layer barrier films and epoxy substrate”, Journal of Photopolymer Science and Technology, Vol. 19, No. 2, pp. 203-208(2006).
[11] J. W. Han, H. J. Kang, J. Y. Kim, G. Y. Kim, and D. S. Seo, “Improvement of permeation of solvent-free multi-layer encapsulation of thin films on polyethylene terephthalate”, Japanese Journal of Applied Physics, Vol. 45, No. 12, pp. 9203-9204(2006).
[12] J. H. Lee, C. H. Jeong, H. B. Kim, J. T. Lim, S. J. Kyung, and G. Y. Yeom, “Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier”, Thin Solid Film, Vol. 515, No. 3, pp. 917-921(2006).
[13] T. N. Chen, D. S. Wuu, C. C. Wu, C. C. Chiang, Y. P. Chen, and R. H. Horng, “Improvements of permeation barrier coatings using encapsulated parylene inter-layers for flexible electronic applications”, Plasma Processes and Polyer , Vol. 4, No. 2, pp. 180-185(2007).
[14] M. C. Lin, C. H. Tseng, L. S. Chang, and D. S. Wuu, “Characterization of the silicon oxide thin films deposited on polyethylene terephthalate substrates by radio frequency reactive magnetron sputtering”, Thin Solid Film, Vol. 515, No. 11, pp. 4596-4602(2007).
[15] M. C. Lin, L. S. Chang, and H. C. Lin, “Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering”, Applied Surface Science, Vol. 254, No. 11, pp. 3509-3516(2008).
[16] Stefano Zanini, Claudia Riccardi, Marco Orlandi, and Elias Grimoldi, “Characterisation of SiOxCyHz thin films deposited by low-temperature PECVD”, Vacuum, Vol. 82, No. 2, pp. 290-293(2008).
[17] T. T. Thuy, J. H. Pham, Y. S. Lee, and G. Y. Kim, “Properties of SiOxNy thin film deposited by plasma-enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film”, Surface & Coatings Technology, pp. 5617-5620(2008).
[18] P. F. Carcia, R. S. McLean, M. D. Groner, A. A. Dameron, and S. M. George, “Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiNx plasma-enhanced chemical vapor deposition”, Journal of Applied Physics, pp. 1061-1066(2009).
[19] T. N. Chen, D. S. Wuu, C. C. Wu, R. H. Horng, H. F. Wei, L. Y. Jiang, H. U. Lee, and Y. Y. Chang, “Deposition and characterization of ultra-high barrier coatings for flexible electronic applications”, Vacuum , Vol. 84, No. 12, pp. 1444-1447(2010).
[20] R. Z. Sang, H. Zhang, L. Long, Z. K. Hua, J. L. Yu, B. Wei, X. Y. Wu, T. Feng, and J. H. Zhang, “Thin film encapsulation for OLED display using silicon nitride and silicon oxide composite film”, Electronic Packaging Technology and High Density Packaging, pp. 1-4(2011).
[21] Y. M. Chiang, and H. H. Hsieh, “The use of the Taguchi method with grey relational analysis to optimize the thin-film sputtering process with multiple quality characteristic in order filter manufacturing”, Computer and Industrial Engineering, Vol. 56, No. 2, pp. 648-661(2009).
[22] C. L. Hwang, and K. Yoon, “Multiple attribute decision making method and application”, Springer-Verlag, Berlin, Heidelberg, New York, pp. 128-140(1981).
[23] H. S. Shih, H. J. Shyur, and E. S. Lee, “An extension of TOPSIS for group decision making”, Mathematical and Computer Modeling, Vol. 45, No. 7-8, pp. 801-813(2007).
[24] 李輝煌，田口方法-品質設計的原理與實務，國立成功大學工程科學系，高立圖書有限公司，台北 (2000)。
[25] 蘇朝墩，產品穩健設計，田口品質工程方法的介紹和應用，中華民國品質學會發行，台北 (2004)。
[26] 鄧聚龍，灰色系統立論與應用，高立圖書有限公司，台北 (2000)。
[27] 葉怡成，應用類神經網路，儒林圖書有限公司，台北 (2001)。
[28] 葉怡成，類神經網路模式應用與實作，儒林圖書有限公司，台北(1997)。
[29] 羅華強，類神經網路-MATLAB的應用，高立圖書有限公司，新竹 (2005)。
[30] 陳金鑫、黃孝文，OLED-夢幻顯示器，五南圖書股份有限公司，台北 (2007)。
[31] 覃禹華，軟性顯示器之市場展望，工業材料雜誌 263 期，65-68頁，2008年11月。
[32] 余王傑、洪昭南、郭有斌，軟性電子阻水/氧氣鍍膜技術發展與近況，工業材料雜誌 275 期 2009年11月。
[33] 陳輝達，氣體阻障層於軟性顯示器產業之應用，機械工業雜誌 307 期，12-20頁，2008年10月。
[34] 陳輝達、張均豪、林東穎，氣體阻障層於軟性顯示器產業之專利分析，機械工業雜誌 315 期，1-9頁，2009年6月。
[35] 王登彥、陳輝達、張均豪，HMDSO材料於軟性顯示器氣體阻障層之技術探討，機械工業雜誌 315 期，1-12頁，2009年6月。
[36] 游清彥，電漿輔助化學氣相沉積法製備OLED元件氣體阻障層之研究，中原大學，化學工程學系，碩士學位論文，2004年7月。
[37] 台智精密科技股份有限公司，奈米掃描白光干涉PDF，台中
，2008年。