在本論文中我們使用射極-濺鍍沉積參鎢氧化銦以及氫化氧化銦之透明導電膜，期望能利用該等材質較高的功函數以及光學透過特性應用於矽晶異質接面太陽能電池的製作上，以獲得較佳電池轉換效率之表現。實驗結果顯示，當調整電極間距為3.5 cm、反應壓力5mtorr、電漿功率密度1W/cm2、基材溫度25°C的製程參數下沉積出的參鎢氧化銦薄膜具有低至4.5×10-4Ω∙cm的電阻率以及在800-1800奈米長波長波段高達75%以上的透光率(沉積厚度約220nm)。相對的，調整電極間距5cm、反應壓力5mtorr、電漿功率密度0.75W/cm2、基材溫度25°C並以水蒸氣為氫源的製程參數所沉積出的氫化氧化銦薄膜呈現最低僅有3.5×10-3Ω∙cm的電阻率，但是在長波長800-1800奈米區域呈現高達92%的光學穿透率(沉積厚度約250nm)。

We have fabricated tungsten-doped indium oxide (IWO) and hydrogen-doped indium oxide (IO:H) thin layers using RF-sputtering technique. By using a one atomic weight percent of tungsten IWO target, the lowest resistivity of the IWO layers fabricated showed 4.5×10-4 Ω∙cm at a film thickness of 220 nm. This film also showed an averaged transmittance of 75% in the IR range of 800-1800 nm. By contrast, hydrogen doped indium oxide (IO:H) layers, prepared using H2O as the source of hydrogen, showed a very high light transmittance of 92% in the wavelength range of 800-1800 nm, yet a relatively high electrical resistivity of 3.5×10-3 Ω∙cm at a film thickness of 250 nm.

1. Commercial Times 2012
2. Martin A. Green, Keith Emery, Yoshihiro Hishikawa, Wilhelm Warta and Ewan D. Dunlop,Prop.Photovolt:Res.Appl.2014:22:1-9
3. Y. Tsunomura, Y. Yoshimine, M. Taugchi, T. Baba, T. Kinoshita, H. Kanno, H. Sakata, E. Maruyama, M. Tanaka, “Twenty-two percent efficiency HIT solar cell”, Solar Energy Material &Solar Cell 93 (2009) 670-673
4. E. Maruyama, A. Terakawa, M. Taugchi, Y. Yoshimine, D. Ide, T. Baba, M. Shima, H. Sakata, M. Tanaka, “Sanyo’s Challenges to the Development of High efficiency HIT Solar Cells and the Expansion of HIT Business ”, 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, (2009) 1690
5. S. Taira, Y. Yoshimine, T. Baba, M. Taguchi, H. Kanno, T. Kinoshita, H. Sakata, E. Maruyama and M. Tanaka, 22nd EU-PVSEC 3-7 September, 2007 Milano, Italy.
6. S.D. Wolf, A. Descoeudres, Z.C. Holman, C. Ballif, “High-efficiency Silicon Heterojunction Solar Cells: A Review ” , Green, Vol. 2 (2012) 7-24
7. Conrad, E. Korte, L. von. Maydell, L.K. Angermann, H. Schubert, C. Stangl, R.Schmidt, “ Development and optimization of a-Si:H/c-Si heterojunction solar cells completely processed at low temperatures. ”,Proc. 21st Eur. Photovolt. Sol. Energy Conf., Dresden, Germany, (2006) 784-787
8. Fesquet, L. Olibet, S. Vallat-Sauvain, E. Shah, A. Ballif, “High quality surface passivation and heterojunction fabrication by VHF-PECVD deposition of amorphous silicon on crystalline Si: theory and experiments. ”
9. Kleider, J.P. Chouffot, R. Gudovskikh, A.S. Roca i Cabarrocas, P. Labrune, M. Ribeyron, P.J. Bruggemann, “Electronic and structural properties of the amorphous/ crystalline silicon interface. ”, Thin Solid Films 517(23), (2009) 6386-6391
10. Das, U. Hegedus, S. Zhan, L. Appel, J. Rand, J. Birkmine, “ Investigation of hetero-interface and junction properties in silicon heterojunction solar cells. ” , Conf. Rec. 35th IEEE Photovolt. Spec. Conf., Hawai, USA, (2010) 1358-1362
11. Schmidt, M. Korte, L. Laades, A. Stangl, R. Schubert, C. Angermann, H. Conrad, E. von Maydell, “Physical aspects of a-Si:H/c-Si hetero-junction solar cells. ”,Thin Solid Films 515, (2007)7475-7480
12. Delfina Munoz, Thibaut Desrues, Pierre-Jean Ribeyron, Cea-Ines, Savoie Technolac - 50 avenue du lac Leman - BP258 F-73375 Le Bourgetdu Lac – Cedex
13. L.Korte, E. Conrad, “Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization. ” Solar Energy Materials and Solar Cells (2009)905-910.
14. S. Hanafusa, H. Kuwano, “Developement of New a-si c-si Heterojunction Solar Cell Acj-Hit (Artificially Constructed Junction-Heterojunction with Intrinsic Thin Layer).” Japn J.Appl Phys Part 1-Regular Papers Short Notes & Review Papers, Vol. 31, No. 11, (1992) 3518-3522.
15. Kobayashi, H. Ishida, Y. Nakato, Y Tsubomura, H. J. Appl. Phys. 1991,69,1736.
16. Tahar, R. B. H. Ban, T. Ohya, Y. Takahashi, Y. J. Appl. Phys. 1998,83,2631.
17. Odaka, H. Iwata, S. Taga, N. Ohnishi, S. Kaneta, Y. Shigesato, Y. J. Appl. Phys. 1997,36,5551.
18. Costellano, J. E. Handbook, Display Technology, Academic Press New York,1992.
19. Granqvist, C. G. Sol. Energy Mater. Sol. Cells 2007,91,1592
20. Ronnen Levinson, Paul Berdahl and Hashem Akbari, Solar Energy & Solar Cells , (2005) 319-349
21. 施敏，半導體元件物理與製作技術，第二版，國立交通大學出版社，新竹市(2002)
22. Sunbo Kim1, Junhee Jung1, Youn-Jung Lee, Shihyun Ahn, Shahzada Qamar Hussain1, Jinjoo Park, Bong-Shik Song, Sangmyeng Han, Vinh Ai Dao, Jaehyeong Lee2 and Junsin Yi1,2*, Materials Research Bulletin (2014)
23. Y. Hishikawa, M. Sasaki, S. Tsuge, S. Tsuda, Jpn. J. Appl. Phys. 33, 4373 (1994).
24. Y. Hishikawa, N. Nakamura, S. Tsuda, S. Nakano, Y. Kishi, Y. Kuwano, Jpn. J. Appl. Phys. 30, 1008 (1991).
25. Y. Hishikawa, S. Tsuge, N. Nakamura, S. Tsuda, S. Nakano, Y. Kuwano, J. Appl. Phys. 69, 508 (1991).
26. M. G. Zebaze Kana, E. Centurioni, D.Iencinella, C. Summonte, Thin Solid Film 500,203(2006).
27. M. Nisha, S. Anusha, A. Antony, R. Manoj, M.K. Jakaraj, Appl. Surf. Sci. 252, 1430(2005).
28. S. Boycheva, A.K. Sytchkova, M.L. Grilli, A. Piegari, Thin Solid Films 515,8469(2007).
29. C.H. Yi, I. Yasui,Y.Shigesato, Jpn. J. Appl. Phys. 34,600(1995).
30. V. Vasu, A. Subramaniam, Thin Solid Films 193,696(1990).
31. T. Karasawa, Y. Miyata, Thin Solid Films 223,135(1993).
32. E. Terzini, P. Thilakan, C. Minarini, Mater. Sci. Eng. B77, 110(2000).
33. H. Moormann, D. Kohl, G. Heiland, Surf. Sci. 80, 261(1979).
34. J. E. Byrne, “Recovery Recrystallization and Grain Growth”, Macmillan Publishing, 1965.
35. J. H. Lee, J Electroceram, doi:10.1007/s10832-008-9539-6
36. Y. Guldner, J. M. Berroir, J. P. Vieren, M. Voos, I. Sagnes, P. A. Badoz, Warren, and D. Dutartre, Phys. Rev. B 48, (1993) 12312-12315.
37. S. Madhavi and V. Venkataraman, J. Appl. Phys. 89, ( 2001) 2497-2499.
38. L. Barraud, Z.C. Holman n, N. Badel, P. Reiss 1, A. Descoeudres, C. Battaglia, S. De Wolf, C. Ballif, Solar Energy Materials & Solar Cells 115 (2013) 151-156