本研究的目的在於探討光阻層上蒸鍍一層金屬層之近場光學微影點加工的技術，藉由光學模擬分析金屬層之特性，並且以定性分析來證明此技術能有效地縮小光阻層上得記號寬度與半高寬。
此技術是將一層薄薄(約10nm)的金屬遮罩層，將聚焦的雷射光通過鍍鋁光纖探針口徑後，輻射在金屬層後會產生熔融區與結晶區，兩者的穿透率會不相同。金屬層熔融區有開啟小於雷射光束之孔徑，而產生熱致超解析效應。相對光阻層上面的曝光面積會因此縮小。由模擬結果可以發現，鍍銦膜與未鍍銦的記號寬度縮減的範圍可達到約 15%，但由於本模擬之加工深度太淺，因此半高寬並沒有縮減反而有增加的趨勢。
本文最後調整探針口徑、曝光時間、光功率、顯影時間、銦膜厚度、能量密度等以上六種參數，來觀察這些參數值對於記號寬度、半高寬與深度的影響。當中發現顯影時間是降低半高寬的主要參數，因此增加顯影時間之後，若以鍍銦10nm模擬結果來討論，在記號寬度縮減達到15%，而半高寬縮減為2.2%。

The objective of this research is to study an innovative lithography using the effect of thermal-induced super resolution, and to demonstrate that the technique can effectively reduce the exposed pit width on the photoresist layer.
The technique makes use of a thin metallic mask layer deposited on the top of the photoresist layer. After illuminating with a focused laser beam, the mask layer opens an aperture in melting temperature area around the center of the laser spot. Because the aperture size is much smaller than the laser spot and the optical properties of solid mask layer are different from those of melting one, the intensity distribution of the transmission light would become narrower than that of the incident light and forms a below spot size. Can be found from the result of imitating, the range plating the indium membrane and reducing with the width of the mark not plating the indium can have been up to about 15%, but because simulation this processing depth too shallow, so FWHM to is it have trend of increase instead to reduce while being wide.
This text to adjust probe bore and exposure time and power and development time and indium thin film thickness and energydensity above parameter. To observe this parameter of effect for pit width and FWHM. According to the simulation results, Indium thin film with a range of thickness 10 nm was evaporated on the photoresist layer as metallic mask layer. the pit width on the photoresist layer could be shrunk by more than 15% and FWHM could be shrunk 2.2%.

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