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研究生: 陳勇全
Yung-chuan Chen
論文名稱: 不同電荷儲存層之奈米晶記憶體研究
The studey of nanocrystal memory with different charge storage layers
指導教授: 郭東昊
Dong-hau Kuo
口試委員: 黃柏仁
Bohr-ran Huang
何清華
Ching-hwa Ho
薛人愷
Ren-ken Shiue
學位類別: 碩士
Master
系所名稱: 應用科技學院 - 應用科技研究所
Graduate Institute of Applied Science and Technology
論文出版年: 2010
畢業學年度: 98
語文別: 中文
論文頁數: 134
中文關鍵詞: 浮動閘極奈米晶記憶體電荷儲存層持久性
外文關鍵詞: floating gate, nanocrystal memory, charge storage layer, retention time
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近年來,傳統浮動閘極記憶體面臨尺寸微縮的挑戰,例如在穿隧氧化層之非揮發性記憶體在一個很長的操作期間,容易地產生漏電流路徑,因此,分散的儲存電荷之奈米晶結構是下一代非揮發性記憶體元件結構。
本實驗以濺鍍法製備Ni薄膜作為電荷儲存層之奈米晶記憶體,於退火條件900℃/3min/N2後進行電特性量測發現,施加偏壓±10V可得記憶視窗2.37V及儲存電荷密度7.36×1011cm-2,在持久性量測發現施加5V應力經過104秒其記憶視窗為1.06V,而電荷損失率約25.35%,在施予-20V的閘極電壓下,漏電流密度為0.439A/cm2,經XPS分析發現,高溫退火導致Ni擴散到阻止氧化層中並形成介金屬化合物Al3Ni。
另一新穎元素Sn作為電荷儲存層之非揮發性記憶體亦以濺鍍法製備,於退火140℃/30min/Ar後進行電特性量測,發現施加偏壓±8V可得記憶視窗1.46V和儲存電荷密度3.10×1011cm-2,在持久性量測發現施加5V應力經過104秒其記憶視窗為0.81V,而電荷損失率約38.17%,在施予-20V的閘極電壓下,漏電流密度為1.11×10-2A/cm2,經XPS分析發現,Sn沒有擴散現象發生,但有SnO相出現。


Recently, the conventional floating gate memory faces a challenge of scaling down, such as the thinner tunneling oxide suffers from leakage path generation easily after a long duration operation. Therefore, nanocrystal (NC) structure with distributed storage elements was proposed as the next generation structure for nonvolatile memory devices.
The nickel film as a charge storage layer for nanocrystal memory was prepared by sputtering method. Device sample subjected to 900℃ annealing for 3min in N2 atmosphere exhibited a significant hysteresis memory window shift of 2.37V and charge density of 7.36×1011cm-2 after 10V voltage sweep. It was also found a memory window shift about 1.06V and the charge loss about 25.35% in the sample after 104sec retention time at a 5V voltage stress. The leakage current obtained from the I-V measurement was 0.439A/cm2 at the gate voltage of -20V. XPS analysis indicated that annealing induced the nickel diffusion to blockage layer and fromed intermetallic compound of Al3Ni.
Tin was the other novel element to be used as the charge storage layer for nonvolatile memory. In this study, the tin layer was deposited by sputtering. Device sample subjected to 140℃ annealing for 30min in Ar atmosphere exhibited a significant hysteresis memory window shift of 1.46V and the charge density of 3.10×1011cm-2 after 8V voltage sweep. Under the retention tests, the memory window became 0.81V and the charge loss rate was 38.17% after suffering a 5V stress for 104sec. The leakage current density obtained from the J-E measurement was 1.11×10-2A/cm2 at the gate voltage of -20V. From the result of XPS, it is evident that tin did not diffuse to the blockage layer and existed as SnO in nanocrystal memory.

摘要 IV Abstract VI 致謝 VIII 目錄 IX 圖目錄 XII 表目錄 XX 第一章 緒論 1 1-1前言與簡介 1 1-2非揮發性記憶體特性 2 1-3非揮發性記憶體分類 3 1-4快閃記憶體種類結構與介紹 4 1-5研究動機與目的 8 第二章 基礎理論與文獻回顧 10 2-1 奈米晶記憶體之操作原理 10 2-1-1 寫入原理 10 2-1-2 抹除原理 11 2-2 奈米晶記憶體之操作機制 11 2-2-1 F-N穿隧效應(Fowler-Nordhein Tunneling) 11 2-2-2 通道熱電子注入(Channel Hot electron Injection) 13 2-2-3 直接穿隧(Direct Tunneling) 13 2-3 半導體奈米晶記憶體之理論 14 2-4 金屬奈米晶記憶體之製備方式 20 2-4-1 電子束蒸鍍法(Electron beam evaporation) 20 2-4-2 共鍍(Co-sputtering) 22 2-4-3 射頻磁控濺鍍(Radio-Frequency Magnetron Sputter) 24 2-4-4 自組裝奈米點沉積(Self-assembled nanodot deposition,SAND) 26 2-4-5 DC直流濺鍍法(Direct Current Sputter) 28 2-4-6 原子層沉積法(Atomic Layer Deposition,ALD) 30 2-4-7 化學氣相沉積法(Chemical vapor deposition,CVD) 31 2-4-8溶膠-凝膠法(Sol-Gel process) 32 2-5 其它金屬材料的奈米晶記憶體 33 2-5-1 Tb2TiO5奈米晶記憶體 33 2-5-2 Cr奈米晶記憶體 34 2-6 MOS元件的理論基礎 35 2-6-1聚積區(Accumulation) 36 2-6-2空乏區(Depletion) 36 2-6-3反轉區(Inversion) 37 2-7 量子現象 39 2-7-1 量子侷限效應(Quantum Confinement Effect) 39 2-7-2 庫倫阻塞效應(Coulomb Blockade Effect) 40 第三章 實驗方法與步驟 41 3-1 奈米晶記憶體之材料與系統結構 41 3-2 實驗系統說明 41 3-2-1 DC直流磁控濺鍍系統 41 3-2-2 高溫管型爐 43 3-2-3 RF射頻磁控濺鍍系統 43 3-3 實驗流程 44 3-3-1 基板清洗 44 3-3-2 高溫熱成長SiO2-穿隧氧化層 44 3-3-3 製備電荷儲存層 45 3-3-4 製備阻止氧化層 46 3-3-5 退火熱處理 47 3-3-6 電極沉積-鋁電極 47 3-3 分析儀器 48 3-3-1 場發射掃描式電子顯微鏡(FE-SEM) 48 3-3-2 電性量測 49 3-3-3 XPS化學分析電子能譜儀(Electron spectroscopy of chemical analysis) 50 第四章 實驗結果與討論 58 4-1 電特性量測分析 58 4-1-1 MOS電容之高頻C-V量測 59 4-1-2 MOS電容之I-V量測分析 68 4-1-3 持久性量測(retention time characteristics) 70 4-2 薄膜表面形態分析與薄膜厚度觀察 71 4-3 薄膜表面化學鍵結及薄膜成分鑑定 73 第五章 結論與未來建議研究方向 101 5-1 結論 101 5-2 未來建議研究方向 102 第六章 参考文獻 103

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