可應用於電阻式隨機存取記憶體之鈧酸鈥薄膜的製備與特性研究

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研究生：	張雯琪 Wen-Zhi Chang
論文名稱：	可應用於電阻式隨機存取記憶體之鈧酸鈥薄膜的製備與特性研究 Preparation and Characterization of HoScOx Thin Films for Resistance Random Access Memory (RRAM) Application
指導教授：	朱瑾 Jinn-P. Chu
口試委員:	郭東昊 Dong-Hau Kuo 周賢鎧 Shyan-kay Jou 周振嘉 C. C. Chou 王錫福 Sea-Fue Wang 曾俊元 Tseung-Yuen Tseng 梁元彰 Yuan-Chang Liang 張佳文 C. W. Chang
學位類別：	博士 Doctor
系所名稱：	工程學院 - 材料科學與工程系 Department of Materials Science and Engineering
論文出版年：	2012
畢業學年度：	101
語文別：	英文
論文頁數：	102
中文關鍵詞：	電阻式轉換記憶體、薄膜、稀土元素、磁控濺鍍、非晶
外文關鍵詞：	Resistance Random Access Memory, Thin Film, Rare-earth element, Sputter, amorphous
相關次數：	點閱：304 下載：2
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上一筆

目前市面上已被廣泛使用的記憶體，如:動態隨機存取記憶體(DRAM, Dynamic Random Access Memory)及快閃記憶體(flash memory)等，在元件的尺寸大小及密度都已達到減縮的限制且也有些先天的缺點。近幾十年來，電阻式隨機存取記憶體(RRAM, Resistance Random Access Memory)被視為最具有發展潛力的新世代非揮發性記憶體(nonvolatile memory)，而正被學者們積極的探討與研究。Chua表示：「憶阻器可實現非常小的奈米等級元件，且不會產生現今將電晶體尺寸縮小的過熱問題。」當惠普從幾年前開始研發縱橫式交換器時，其密度曾達到快閃記憶體的40或50倍之多。
本研究初期，使用射頻磁控濺鍍系統製備厚度約36奈米之三元(HoScOx, HSO)的非晶質(amorphous)薄膜。實驗中利用不同比例的鍍膜氣氛，得到氧含量分別為50.7、55.4和57.6 at. %的薄膜(其試片名稱表示為HS51O、HS55O和HS58O)。並使用TEM、EDS、半導體量測儀(Agilent HP B1500A)、XPS觀察其基本特性且深入探討電阻的轉換(resistance switching)行為及轉換機制。由實驗結果發現，低氧含量之HSO薄膜(HS51O和HS55O)具有unipolar轉換行為且事先不需要forming process來形成電阻式記憶體(即non-forming)。但隨著氧含量愈高所需施加的操作電壓上升，高氧含量之HS58O薄膜則不具有電阻式轉換行為。可想而知，電阻轉換行為與薄膜中氧含量擁有相當程度的關係將在本文中深入研究及討論。接著探討退火氣氛(HV, High Vacuum和oxygen)及薄膜厚度(小於36奈米)的影響，以求得最佳化的電阻式隨機存取記憶體。

The nonvolatile of resistance random access memory (RRAM) is great attracting as a promising candidate for next-generation memory application. In this study, 36 nm-thick of amorphous HoScOx (HSO) films show high potential for RRAM applications because they have unipolar resistance switching (RS) behavior, low electrical stress, high performance of endurance and retention, and simple process without forming or annealing. Different oxygen contents (50.7, 55.4 and 57.6 at. % whose were denoted as HS51O, HS55O and HS58O, respectively) in HSO thin films are prepared by R.F. magnetron sputtering with various Ar/O2 ratio. There is an apparent dependence of RS property on oxygen content in the film. The RS property is investigated and is thought to be related to oxygen-deficient and oxygen-deficient concentration, which serves as the filamentary conduction in the sample. To further obtain the optimization condition for RRAM application, the post-annealing atmosphere and thickness effects are also studied in this work.

摘要		I
Abstract	II
Acknowledgements	III
Contents	IV
List of tables	VI
Chapter 1 Introduction	1
Chapter 2 Background	4
2.1 What is RRAM	4
2.2 Classification of resistance switching types	5
2.3 Resistance switching mechanisms	7
2.3.1 Conducting filaments mechanism (CFM)	7
2.3.2 Electrochemical metallization mechanism (ECM)	8
2.3.3 Valence change mechanism (VCM)	10
2.3.4 Thermochemical mechanism (TCM)	11
2.4 Electrical transport and conduction mechanisms	13
2. 5 Materials and Characterization of HoScO3	17
Chapter 3 Experimental procedure	32
3. 1 Target preparation	32
3. 2 Substrate preparation	32
3. 3 Thin film deposition	33
3. 4Annealing condition	33
3.5 Characterization of films	34
3.5.1 Composition and crystal structure analyses	34
3.5.2 Chemical state analyses	34
3.5.3 Electrical property analyses	34
Chapter 4 Results and discussion	38
4.1 As-deposited films	38
4.1.1 TEM results	38
4.1.2 I-V results	39
4.1.3 XPS results	43
4.2 Annealing films	44
4.2.1With O2 atmosphere in RTA	45
4.2.2 With HV in RTA	48
4.3 Effect of film thicknesses	51
Chapter 5 Conclusions	92
References	94
Vita		100
List of Publications	101

                                

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