在本研究中所探討的四元化合物半導體材料-硫硒化銅錫的能帶間隙因相似於硫(硒)化銅鋅錫，且其導帶之位置高於水的還原電位，因此適合做為以光進行水分解產生氫氣的電極材料。此外，受到量子侷限效應的影響，一維奈米材料具有良好的直線傳輸性。因此，在本研究中以熱溶劑法的方式成長硫硒化銅錫奈米線材料來做為日後進行光分解水產氫的電極材料。而在合成過程中將利用不同比例的硫與硒的比例進行材料能隙的調控。
此合成主要分為三階段法與兩階段法兩種。在三階段法中，先合成Cu2-xSeS奈米線材。之後，再將初步合成的Cu2-xSeS奈米線材以檸檬酸鈉進行處理。由於檸檬酸根會抓取Cu2-xSeS中的銅離子，使Cu2-xSeS轉相成結構上較不穩定的CuSeS奈米線，借此幫助錫元素的摻雜。然而，於掃瞄式電子顯微鏡影像分析可看出：當合成時所使用硒比例提高時，將會影響其奈米線的型態。而由實驗分析可知檸檬酸鈉浸泡時間的長短與處理時氧氣的多寡將是一重要因子。對此，在本研究中亦採用兩階段的製程，探討在未經檸檬酸鈉處理的Cu2-xSeS奈米線材是否仍可進行錫元素的摻雜而製作出硫硒化銅錫奈米線。相關的結構訊息將由拉曼光譜與X光繞射分析進行分析獲得。

In this study, a quaternary compound semiconductor-copper tin sulfide selenide could be employed as photocathode to produce hydrogen by water splitting due to similar band gap as copper zinc tin sulfide selenide and higher conduction band position than water reduction potential. In addition, nanowire materials own good carrier transport behavior because of quantum confinement effect. Therefore, a solvothermal method was used to synthesize copper tine sulfide selenide nanowire and the band gap modulation was controlled by the ratio of sulfur and selenium in the anion precursors.
For copper tine sulfide selenide nanowire synthesis, three stages process and two stages process were used. In three stages process, Cu2-xSeS nanowires were synthesized at first. After that, Cu2-xSeS nanowires were treated by sodium citrate aqueous solution. Because citrate ions could catch copper ion from Cu2-xSeS nanowires, it can transfer into Cusses nanowires which is an unstable phase for the tin incorporation in the next step. However, the morphologies of nanowires could be destroyed when we increased the content of Se. Therefore, a two stages process was employed to discuss the possible for the incorporation of tin element without the sodium citrate treatment. The structural identifications were characterized by Raman and X-ray diffraction.

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