本論文之研究重點在於設計製作應用於低密度分波多工系統的多波長雷射陣列技術，研究的方向在於寬增益頻譜材料與新型取樣光柵分佈布拉格反射式雷射之研發。
在寬增益頻譜的材料技術上，藉由量子井混合與區域選擇性磊晶技術的實作結果，對寬增益頻譜材料的製程條件進行最佳化。就量子井混合技術而言，我們成功以低能量離子佈植輔助量子井混合技術製作出磷砷化鎵銦的多重量子井雷射，在室溫連續電流的操作下，雷射之臨界電流為10.4 mA，輸出功率為13.8 mW，特徵溫度為58.4 K，而在波長位移量可達44 nm，此高效能之特性驗證了量子井混合能實際應用於主動式通訊元件上。另外我們也建立了內部擴散的理論模型，能計算實作元件上受到的電壓對波長位移量造成的影響，其分析結果得到能帶受到正向電壓影響的緣故導致能帶傾斜，使元件之電致發光波長位移量小於光致發光波長，藉由實作的結果更印證理論模型的準確性。就區域選擇性磊晶技術而言，藉由寬間隙區域選擇磊晶技術成長出寬增益頻譜的材料，由此技術我們達成寬達102 nm的增益範圍，可應用於光通訊波段的S頻帶與C頻帶，磊晶成長完後，每個通道的增益峰值誤差均小於5 nm，此製程條件下的材料品質證實可實際應用於在單一晶片上製作多波長雷射陣列。最後在新型取樣光柵分佈布拉格反射式雷射技術上，為實現多波長的目標，我們利用不同厚度的波導於取樣光柵區域以簡化操作機制，並利用此新型取樣光柵設計12組相互間距為10 nm之反射率頻譜，此結果亦可運用於我們成長之S頻帶與C頻帶的區域選擇性磊晶結構，由理論模擬的數據，元件可達10 mW之功率輸出與43.7 dB之最佳旁模抑制比，其結果指出利用新型取樣光柵技術亦可輕易達到高品質之單模輸出特性。

This thesis focuses on the design and fabrication of wide-band gain material and novel sampled-grating DBR technology for Coarse-WDM multiwavelength laser array sources.
For wide-band gain material technology, we analyze the experiment results of QWI and SAG technology to optimize the process conditions for realizing the wide-band gain material. For QWI technique, we demonstrate high-performance InGaAsP based MQW lasers fabricated by low-energy ion implantation induced QWI technique. At room temperature, the QWI lasers have CW characteristics of 10.4-mA threshold current, 13.8-mW maximal output power, 58.4 K characteristic temperature and 44-nm wavelength shift which verify that the material quality after intermixing is feasible for fabricating practical devices. A theoretical model for the interdiffusion process has been developed to analysis the effect of forward bias on the wavelength shift caused by the QWI process. Due to the change in band bending caused by the forward-biased, the intermixing induced wavelength shift for the electroluminescence spectrum is less than for the PL spectrum. The experimental data on the wavelength shift from the QWI process match the trend of the theoretical results. For SAG technique, we demonstrate wide-band gain material by Wide-Stripe Selective Area Growth technique. The wavelength shift from material gain peak to peak is 102 nm which cover the S-band and C-band in optical communication system, and the tolerance of wavelength in material gain peak are less than 5-nm. It indicts that the material quality after SAG process is feasible for realizing the multiwavelength laser arrays onto single chip.
For novel sampled-grating DBR technology, in order to cover different wavelength bands with simple fabrication, we design the grating reflector is formed of two sampling grating subsections on waveguides with different thickness. We demonstrated the power reflectivity of 12 wavelengths in 10-nm wavelength spacing by sampled-grating DBR technique which can be combined with practical SAG technique in S-band and C-band region. The simulation results have characteristics of 10-mW output power and 43.7 dB maximal SMSR. The results indict that high single-mode yield with simple fabrication procedures can be achieved by using the novel sampled-grating technique.

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