本研究之目的為合成CuII(OCHMeCH2NEt2)2先驅物，並且利用此先驅物以化學氣相沈積的方法成長銅薄膜，藉由調整沈積溫度及沈積時間，探討成長出高純度且具有良好之平坦度、緻密性、連續性及低電阻值的銅薄膜之條件；同時觀察銅薄膜的初始成長狀況。
在合成先驅物CuII(OCHMeCH2NEt2)2的實驗中，首先藉由FTIR確定所合成之先驅物確實為CuII(OCHMeCH2NEt2)2且具有高純度；再藉由TGA熱分析可知此先驅物在室溫時具有良好的熱穩定性，且由TGA熱分析可找到CuII(OCHMeCH2NEt2)2的裂解溫度且證實其為相當適合作為化學氣相沈積成長銅薄膜之先驅物。
藉由調整沈積溫度及沈積時間，可以成長出高純度且具有相當良好之平坦度、緻密性、連續性及低電阻係數的銅薄膜；由研究結果發現在沈積溫度200℃，沈積時間為5分鐘時，所成長之銅薄膜具有最佳的表面型態及最低的電阻值(2.58 -cm)。並且利用此沈積條件在具有溝槽的TaNx/Si基材上成長銅薄膜，可發現銅薄膜在溝槽中的側壁及底部之階梯覆蓋情形相當良好且均勻，由以上研究結果顯示此CuII(OCHMeCH2NEt2)2先驅物可作為成長電鍍銅晶種層的先驅物。

The volatile copper(II) complex CuII(OCHMeCH2NEt2)2 was synthesized. By the use of this CuII(OCHMeCH2NEt2)2 as a MOCVD precursor, highly conductive, conformal, continuous, nonporous, and pure copper thin films were deposited at various deposition temperatures and deposition times in this study.
The successful synthesis and purity of volatile copper(II) complex CuII(OCHMeCH2NEt2)2 were characterized by FTIR. The thermal stability and decomposition temperature found by TGA made the compound a great precursor for Cu CVD.
A highly conductive, conformal, continuous, nonporous, and pure copper thin film can be deposited with proper deposition temperature and deposition time. According to experimental results, A copper thin film obtained at 200℃ and a deposition time of 5 minutes had the lowest resistivity of 2.58 -cm. A copper thin film was deposited on patterned TaNx/Si substrate at the optimal condition. The step coverage of the copper thin film on sidewall and bottom of the trench was conformal and continuous. According to these results, CuII(OCHMeCH2NEt2)2 is an excellent precursor for the deposition of Cu seed layer.

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