本文提出加工整合兩個水平直線奈米流道連結曲線奈米流道以及一個垂直直線奈米流道梯型凹槽到預定寬度及預定深度的模擬模式及公式。本文先利用比下壓能公式及兩道次偏移加工法，進一步推導出加工直線段奈米流道梯型凹槽到預定寬度及預定深度所需的前述各項加工參數的相關公式及模擬模式。在連接曲線加工時，由於AFM機台只能進行微小直線段加工，故本文推導出曲線與微小線段的弦高誤差的計算公式，進而提出模擬計算出由多個微小線段連結而成的近似曲線的方法。
而在垂直段的部分。本文提出形狀堆疊觀念，在兩個水平直線流道上堆疊上一個垂直直線奈米流道，推導出加工直線段奈米流道梯型凹槽到預定寬度及預定深度所需的各項加工參數的相關公式及模擬模式。本文的形狀堆疊觀念為將計算出的垂直直線奈米流道的第一切削道次和上方水平直線奈米流道的第一切削道次與第二切削道次的偏移量相同，故垂直直線奈米流道的第一切削道次的偏移量會跟水平直線奈米流道第一切削道次以及第二切削道次間的偏移量Pn相同。本文加工兩個水平直線奈米流道連結曲線奈米流道時，先加工第一切削層，再加工第二切削層，把兩個水平直線奈米流道連結曲線奈米流道加工到預定深度30nm。然後再僅用一個切削層即可加工垂直奈米流道到預定深度30nm。
因為垂直直線奈米流道的各切削道次進行偏移量加工時，垂直直線奈米流道的前四個切削道次以及後面七個切削道次在移除垂直直線奈米流道的體積時，有跟水平直線已切削到預定深度的移除體積相交，故本文需要在每當偏移一個偏移量Pn的切削道次時，就需要改變一次下壓力，並且使其加工深度到預定深度30nm，且可使底部上凸值小於設定值0.5nm。故經過模擬以後可看出垂直直線奈米流道只需要一個切削層便可以直接加工到預定深度30nm，所需下壓力也不會超過本文所設立最大值91.33μN 便能直接把垂直直線奈米流道加工到預定深度30nm。
本文也提出應用較小下壓力可去除垂直直線奈米流道的微小凸起側邊的方法。其為沿著垂直直線奈米流道的各加工長度的起始點和終點所連接線段進行垂直直線的加工，其微小下壓力會造成垂直直線奈米流道的垂直線的側邊深度略微增加側邊，但此微小下壓力的大小要控制使增加的深度小於0.54nm，則可使微小的凸起側邊消除變成垂直直線的側邊。本文也提出針對整合兩個水平直線奈米流道連結曲線奈米流道及一個垂直直線奈米流道進行AFM量測實驗時的量測斷面方法及所需的直線方程式。
最後並量測AFM實驗加工所得之結果，將量測結果和模擬結果相比較;驗證本文所提出整合兩個水平直線奈米流道連結曲線奈米流道以及一個垂直直線奈米流道到預定寬度及預定深度的模擬模式和公式及AFM實驗加工方法為合理可接受的。綜上所述，本文具有學術創新性及應用價值。

The paper proposes a simulation model and equation for machining and integrating two horizontal straight-line nanochannels with curved nanochannel and a vertical straight-line nanochannel’s trapezium groove to the expected width and expected depth. First of all, the paper uses specific down force energy (SDFE) equation and two-cutting-pass offset machining method to further derive the related equations and simulation models for the various aforesaid machining parameters that are required for machining of a straight-line-segment nanochannel’s trapezium groove to the expected width and expected depth. During machining of curve connection, since atomic force microscope (AFM) machine can only perform machining of tiny straight line segments only, the paper derives a calculation equation of chord height tolerance between curve and tiny line segment, and further develops a quasi-curve simulated calculation method that is formed by connection of multiple tiny line segments.
As to the part of vertical line segment, the paper proposes a concept of shape stacking that a vertical straight-line nanochannel is stacked on two horizontal straight-line channels. Then the paper derives the related equations and simulation models for the various machining parameters that are required for machining of a straight-line-segment nanochannel’s trapezium groove to the expected width and expected depth. Regarding the paper’s concept of shape stacking, let the first cutting pass of the calculated vertical straight-line nanochannel have the same offset amount as the first cutting pass and the second cutting pass of the upper horizontal straight-line nanochannel. Then the offset amount of the first cutting pass of the vertical straight-line nanochannel will be the same as the offset amount Pn of the first cutting pass and the second cutting pass of the horizontal straight-line nanochannel. During machining of two horizontal straight-line nanochannels for connecting with curved nanochannel, the paper firstly performs machining of the first cutting layer, and then the second layer, and connects the two horizontal straight-line nanochannels with the curved nanochannel for machining to the expected depth 30nm. After that, just using a cutting layer only, the paper can perform machining of the vertical nanochannel to the expected depth 30nm.
During offset amount machining of vertical straight-line nanochannel at different cutting passes, when the volume of vertical straight-line nanochannel is removed at the first four cutting passes and the last seven cutting passes of vertical straight-line nanochannel, the removal volume intersects with that of cutting of the horizontal straight line to the expected depth. Therefore, whenever an offset amount Pn is needed for offsetting at a cutting pass, this paper has to change the down force once in order to make the machining depth reach the expected depth 30nm, and make the value of protruding height on the bottom less than the set value 0.5nm. As a result, after simulation, we can see that just using a cutting layer only, a vertical straight-line nanochannel can be directly machined to the expected depth 30nm. Besides, with the required down force also not exceeding paper preset maximum value 91.33μN, the vertical straight-line nanochannel can be directly machined to the expected depth 30nm.
This paper also develops a method that applies a smaller down force to remove the slightly protruding lateral side on the vertical straight-line nanochannel. The method is that vertical straight line machining is performed for the line segment connecting the starting and ending points of each machining length along the vertical straight-line nanochannel. The tiny down force would slightly increase the depth of the lateral side of the vertical line of the vertical straight-line nanochannel. But the size of this tiny down force has to be controlled in order to make the increased depth to be less than 0.54nm, and then makes the slightly protruding lateral side removed to become a vertical straight-line lateral side. In addition, focusing on integration of two horizontal straight-line nanochannels with curved nanochannels and a vertical straight-line nanochannel, the paper also proposes a cross-section measurement method and the required straight line equation for conducting of AFM measurement experiment.
Finally, the paper measures the results obtained from the AFM experimental machining, and then compares the measurement results with the simulation results, thus proving that the paper’s proposed simulation models and equations for integrating two horizontal straight-line nanochannels with curved nanochannels and a vertical straight-line nanochannel to the expected width and expected depth, as well as the AFM experimental machining method are all reasonable and acceptable. To conclude, this paper is academically innovative and of high applicability.

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