本論文以化學氣相傳導法成長Ga1-xInxSe (0≦x≦0.5) 之三元化合物系列半導體，並對此系列晶體進行晶體結構分析、光學與電性量測，藉此研究及討論其特性。此外因為硒化鎵與硒化銦皆為發光訊號極佳的材料，所以近年來被廣為研究，但大多數是改變硫屬化物的部分，鮮少改變III族金屬相，故此研究將探討改變III族金屬相後材料之特性。
本論文藉由能量散佈光譜儀進行量測，以確定成長材料之元素比與預期成分相符。接著透過X-ray晶格繞射分析儀分析Ga1-xInxSe之晶格結構為六方晶結構，發現當銦摻雜於硒化鎵時，晶格常數a與c會隨著銦增加而變大。並且以固態532 nm雷射為激發源量測拉曼散射光譜，可得到四組振動模態，在 GaSe 分別為為A1’(12) 131.68 cm-1 、 E’(TO) 211.57 cm-1 、 E’ (LO) 251.77 cm-1 、A1’(22) 305.91 cm-1 ，經由實驗發現上述四組震動模態皆會隨著銦成分增加而往低波數移動。
光學量測實驗中，藉由光激發螢光光譜與熱調制反射光譜分別對Ga1-xInxSe系列樣品進行實驗，發現在這兩個實驗中所得到之激子躍遷訊號皆會隨著銦的成分變化產生紅移現象，並且其能隙訊號會隨著銦的摻雜成分增加，訊號半高寬將會變寬；在溫度變化實驗中，則發現溫度降低時訊號強度變強，並且當能隙訊號往高能量移動，訊號半高寬亦會變寬。此外於光激發螢光實驗之低溫實驗中，發現能隙附近具有數個峰值訊號，其分別為束縛激子群與自由激子。其中自由激子隨溫度升高，紅移且強度衰減速度較緩慢，束縛激子則會因為溫度升高使激子強度快速消長，故低溫時由束縛激子主導，高溫時則由自由激子主導。
電性量測實驗中，藉由Photo V-I實驗觀測到原本純的硒化鎵為大電阻，但隨著摻雜銦成分越多其電阻會越小，且不同光源對Ga1-xInxSe系列的樣品照射，會使樣品的電阻變小，其中以白光LED最為明顯，因為白光LED的主波長與材料能隙接近。在熱探針實驗則發現硒化鎵在未摻雜銦時，其呈現p型半導體特性，但摻雜銦後即變為n型半導體。最後在表面光電壓量測與光電導量測中，顯示出Ga1-xInxSe系列樣品有很強的光響應特性，且能隙範圍大，未來可應用於光電元件與太陽能電池。

Ga1-xInxSe (0≦ x ≦0.5) series layered semiconductors were grown by chemical vapor transport (CVT) method using ICl3 as a transport agent. The characterizations of Ga1-xInxSe (0≦ x ≦0.5) crystals have been studied using optical and electrical techniques. The optical techniques are photoluminescence (PL) and thermoreflectance (TR) measurements, while the other techniques are Surface Photovoltage (SPV), Photoconductivity (PC), Photo V-I, and Hot Probe. The crystal structure and lattice vibration behavior of Ga1-xInxSe (0≦ x ≦0.5) series layered crystals were characterized using X-ray diffraction (XRD) and Raman measurements. As a result of XRD, the Ga1-xInxSe (0≦ x ≦0.5) series are crystallized in two-layer hexagonal (2H) structure. The XRD angles and Raman frequencies of the Ga1-xInxSe (0≦ x ≦0.5) series shift to lower values as the composition of indium increases. Based on TR and PL measurements of the Ga1-xInxSe (0≦ x ≦0.5) series, the layered crystals are classified as direct bandgap semiconductors with the bandgap values ranging from visible light to infrared. As the composition of indium increases, energies of the band-edge transition of the Ga1-xInxSe series layers are decreased. We also do the temperature dependence of PL and TR for Ga1-xInxSe (0≦ x ≦0.5), we can find this bandgap signal has a redshift phenomenon and broader . The bandgap of PL range for FWHM (full width half maximum) 34 meV to 67 meV. The bandgap of TR is between 31 meV to 63 meV. The PL results show many of the near-band-edge emission features, including BX (bound exciton) and FX (free exciton) that detected at 4K. The SPV experiment of Ga1-xInxSe has wide range for solar cell absorption wavelength ranging from visible light to ultraviolet. The photoconductivity of Ga1-xInxSe have range from infrared to ultraviolet. In Photo V-I , white light LED have higher response than tungsten lamp because LED wavelength range is near Ga1-xInxSe band gap. The resistivity will decrease as indium composition series increase. The Hot probe result shows pure GaSe is an p-type semiconductor, while the addition of indium causes the series to become n-type semiconductors.

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