透明導電薄膜為光電元件中不可或缺的材料，現今的透明導電薄膜大多為氧化銦錫薄膜，但因其原物料成本逐漸提升且不具可撓性，故轉為尋求其他替代材料。本研究將合成銀奈米線並應用於透明導電薄膜，並探討其光電特性。
本研究分成兩個部分，第一部分是以多元醇法合成銀奈米線，使用二元醇為還原劑，在高溫反應下可以使硝酸銀還原成銀，再利用離子添加劑四丁基氯化銨、四丁基溴化銨誘導晶種成長，最後在包覆劑聚乙烯吡咯烷酮輔助下，形成銀非對稱性的成長，並探討不同的合成參數，如反應物濃度、溶劑比例等，對於銀奈米線成長之影響。第二部分以旋轉塗佈製備銀奈米線透明導電薄膜，調整銀奈米線漿料濃度、溶劑組成和增稠劑比例，對於薄膜的光電特性有顯著的影響。
本實驗成功合成直徑約50 nm、長度超過10 µm以上的銀奈米線，縱橫比約500且銀轉化率皆為60%以上。後續以此材料塗佈一次即具有片電阻為塗佈次數為一次即具有片電阻為4.56 Ω/sq、穿透度76%、霧度21.5%的銀奈米線透明導電薄膜，對於未來應用在光電元件中具有實用化潛力。

Transparent conductive film (TCF) is an indispensable material for photovoltaic devices. The demand for transparent conductive film is rapidly increased due to the wide development of technology. The indium oxide Tin (ITO) film current is mostly used as transparent conductive films until now. However, problems regarding ITO material are the lack of supply and increase in cost. Therefore, many researches are looking for other alternatives. In this study, we focused on the synthesis of silver nanowire (SNW) and its application in transparent conductive film.
There were two parts in this study. The first part was the preparation of silver nanowires by polyol method. Under the high temperature condition, silver nitrate (AgNO3) is reduced to metallic silver with using ethylene glycol (EG) as reducing agent, where chloride salt and bromide salt are added to induce the seed growth. The asymmetric growth of silver is led by the capping agent, polyvinylpyrrolidone (PVP). The effects of synthesis factors, such as reaction temperature, concentration of reactants, composition of reducing agent, and dosing rate, on the growth of silver nanowire were investigated in detial. In the second part, the SNW transparent conductive film is fabricated in the spin coating process. The concentration of SNW and the composition of solvents show significant effects on the optoelectronic properties of film.
In conclusion, we successfully synthesized SNW with a diameter of 50 nm and length of more than 10 μm, i.e., aspect ratio of about 500. The conversion of silver ion to metallic silver is more than 60%. The SNW transparent conductive film with sheet resistance of 4.56 Ω/sq, transmittance of 76%, and haze of 21.5% with using the prepared SNW. It has great potential for application in the photoelectric device in the future.

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