利用偏壓輔助微波電漿沉積系統沉積高導電性奈米鑽石薄膜，量測場發特性可得到非常好的turn on 電壓。氧化鋅有優良的紫外光感測，將超奈米鑽石和氧化鋅奈米柱可以提升其紫外光感測

The aim of this research is to synthesize the highly conducting ultrananocrystalline diamond (UNCD) materials for multifunctional optoelectronic device applications. Those diamond based devices exhibits ultrahigh electrical properties in vacuum microelectronics. Microstructural evolution of UNCD films and their optoelectronic properties using bias-enhanced nucleation and growth (BEN-BEG) process was systematically investigated. The BEN-BEG processes were found to be an effective diamond nucleation technique to enhance the electrical properties and stability of UNCD films. Initially, the UNCD films were synthesized in CH4/Ar plasma using negative of -200 V by a microwave plasma-enhanced chemical vapor deposition (MPE-CVD), where the bias grown UNCD films possesses enhanced electron field emission (EFE) properties and plasma illumination (PI) properties. Also the UNCD films were developed as superior UV photodetector.

Later, we systematically investigated the growth behavior of nanocrystalline diamond (NCD) films in CH4/Ar/H2 plasma under different positive and negative bias voltages, and their superior EFE properties were attained. On the other hand, we have executed the bias-enhanced plasma post-treatment (bept) technique in the two-step MPE-CVD process to form hybrid structure. The CH4/Ar/H2 plasma were performed on UNCD films, which generates the coalescence of ultra-small diamond grains. The combination of bept process and the Au-coated Si substrate to achieve high performance EFE emitters and microplasma (MP) device with long lifetime, which is superior to that of other nano-structured diamond films.

Besides, the addition of proper amount of nitrogen (N2) in reacting gases can increase the sp2 bonding structure, which efficiently raise the electrical conductivity of electrons. We utilized the application of BEG process in CH4/N2 plasma to enhance the electrical conductivity of UNCD films using MPE-CVD system. The nanosized diamond grains with needle-like structures are the most promising candidates for the superior electron emission, exclusively when they are encased in graphene-like layers. The salient feature of such materials with unique granular structure is that their conductivity and EFE properties can be tuned in a wide range. Furthermore, diamond-based nano-carbon composite (d/NCC) materials were we synthesized at low temperature (~450℃) using CH4/N2 plasma with application of bias voltage with small amount of H2 addition. Such a d/NCC material exhibits excellent electron conductivity and EFE properties, which is superior to those achievable in other kind of conducting diamond films. Most importantly, the electrical properties of such a d/NCC material can be tuned over a wide range in a systematic manner, rendering this material with greater potential for practical applications.
Finally, the high performance EFE materials were designated and employed in the fabrication of highly efficient vacuum EFE (VEFE) devices. Hence, we fabricated VEFE devices using negative biased ultrananocrystalline-diamond graphite multifinger laterally integrated cathode/anode materials (NBG-UNDG-ML-EFE). The NBG-UNDG-ML-EFE device was utilized in electron field emitter and display applications. A new kind of microplasma devices is being fabricated using NBG-UNDG multifinger cathode configurations and reported. On the other hand, NBG-UNDG-ML-EFE anode/cathode materials used in UV photodetection. This fabrication method is economic and simple, moreover the vacuum devices exhibits ultrahigh electrical properties than as grown materials and other materials.

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