多晶鑽石(polycrystalline diamond, PCD)是一種高性能合成材料，具有高硬度、高耐磨性、良好的熱傳導率、低熱膨脹係數等特性，在切削刀具的應用上可獲得良好的加工效果，但這些優異的性能使其加工難度增加，不適合以傳統銑削或車削的方式進行加工，因此多晶鑽石的加工技術就顯得額外重要。
本研究以光纖雷射針對多晶鑽石進行切割及修整製程研究，並驗證雷射修整製程的可行性。文中以反應熔融切割機制將PCD切斷後，再針對其切斷面進行修整，其中探討不同修整方式對加工表面之影響。本研究以所開發的修整方法搭配偏轉角度的加工方式，以改善切口加工斜面與修整時因光束遮蔽導致表面形貌不一致的情形。研究結果顯示以此方式能獲得較切割後切斷面更佳的表面(表面粗糙度Ra 0.202 μm)，而將此製程用於放電加工之試片進行驗證也可獲得相近之結果。此外，本文也以PCD上方夾持矽晶片方式有效改善過切導致的切口鈍化情形，並探討夾持的矽晶片厚度對修整後表面之影響。由結果顯示夾持矽晶片加工會使加工表面條紋加劇，而此問題則可透過降低矽晶片厚度來改善。在以夾持厚度100 μm矽晶片進行修整後可獲得無明顯切口鈍化及切面粗糙度Ra 0.272 μm之結果。

Polycrystalline diamond (PCD) is a high-performance synthetic material which has several outstanding properties, such as good thermal conductivity, high hardness, and high wear resistance. These features of polycrystalline diamond can obtain good effects in the application of cutting tool, but they also enhance the fabrication difficulty for conventional manufacturing techniques, like milling and turning. Therefore, the new processing technique development of polycrystalline diamond becomes very important.
This study used fiber laser to research cutting and finishing process of polycrystalline diamond then verified the feasibility of the process. The experiment used reactive fusion cutting mechanism to cut PCD and then finish the cutting surface. This study also investigated the influence of different finishing methods on the cutting surface. In addition, a finishing method with different deflection angles was used to improve the beam shading and taper cutting problem. After finishing, the surface roughness Ra 0.202 μm was obtained and the finished surface quality is significantly better than the surface after cutting. Besides, it could attain similar results when the process was applied to the PCD cutters machined by wire electrical discharge machining(WEDM).
This research also used a method, clamping silicon wafer on the PCD, to solve the problem of cutting edge passivation caused by overcutting, and then studied the effect of the thickness of silicon wafer clamped on the machined surface. The results showed that clamping silicon wafer process would aggravate the surface striation. However, this problem could be improved by decreasing the thickness of the silicon wafer. It is proved that by clamping 100 μm silicon wafer in the finishing process the ideal square cutting edge can be achieved and the surface striation would be eliminated. After the treatment, the surface roughness Ra 0.272 μm was achieved.

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