本論文將以Pentacene作為主動層材料，並分為兩部分來探討，第一部分為製作成低電壓有機薄膜電晶體，元件使用雙層High-K閘極絕緣層PVA與ALD-Al2O3來降低電晶體之電壓，利用SEM量測PVA的厚度，並進行電容量測確定PVA與ALD-Al2O3的介電係數，經由實驗結果得知此雙絕緣層結構相較於單層絕緣層結構之元件有著更佳的電特性，由Contact Angle佐證，ALD-Al2O3有極高的疏水性。藉由磁滯測試得知此雙層結構元件有更佳的穩定度，另外可由AFM材料分析得知不同元件的材料晶相差異，此較佳的電特性將利用AFM表面粗糙度來解釋。
第二部分為製作成有機光感測薄膜電晶體，結構與第一部分相同，在此部分Pentacene兼具作為吸光層與通道層的作用，元件製作完後照綠光，量測照光後變化的電特性，並計算出分別之光響應度，光靈敏度、EQE與偵測度。
首先 PVA 將不使用有毒性的交聯劑，而是與 DI.Water 混和，使用實驗室已知的比例 PVA: DI.Water = 1:8，隨後配合旋轉塗佈初轉速 500 rpm，時間 20 秒，末轉速 3500 rpm，持續時間為 40 秒，然後放進烤箱，以 110°C 烘烤 90 分鐘去除絕緣層內之水分得到較佳成膜品質，接著以原子層沉積(Atomic Layer Deposition, ALD)的方式沉積不同厚度之ALD-Al2O3 (0、10、20、30 nm)，經由實驗結果可明顯得知10 nm厚度之ALD-Al2O3為電特性較佳之有機薄膜電晶體。
從第一部分可以得知雙High-K閘極絕緣層具有較好的電特性後，通過調變吸光層(Pentacene)厚度(30、50、70 nm)至元件電特性及響應度達最佳值，並利用UV-Visible 光譜儀量測薄膜之光吸收度，驗證Pentacene之厚度變化在綠光波段的吸收度確實明顯的提升，最後搭以元件負閘極長時間偏壓測試與磁滯的數據，加以說明此雙High-K閘極絕緣層不僅改善表面提升元件電特性與光特性，同時也通過降低界面缺陷增加了元件的穩定性。

The emerge of organic thin-film transistors (OTFTs) have provided a path to achieve low cost and less complexity of device fabrication. Among all organic materials, pentacene based OTFT is considered to be the most potential candidate for practical application including flexible displays, large-area sensors for artificial skin applications, and radio-frequency power transmission devices.
For OTFT, power consumption of device has always been our great concern. Basically, two paths are provided to solve this difficulty. One is thickness reduction of dielectric, the other is adoption of high-k dielectric. For the first path, due to the fabrication method of organic thin film (spin coating), density of grain boundaries, defects, and pinholes will increase dramatically and lead to degradation of the device. Therefore, we utilize high-K dielectric material, in this study, we selected PVA, an organic high k material, as our gate dielectric since its compatibility of flexible device fabrication. However, PVA is a hydrophilic material, which means that Pentacene should be deposited after a specific curing process or surface engineering design. Here we add an ALD-Al2O3 layer, which is also a high-K material to turn the surface into a hydrophobic surface. By doing so, the device can achieve low-voltage operation with significant improvements in electrical performance.
After achieving a low-voltage OTFT device, we will adopt the structure to make an organic photo-transistor (OPT). In this device, pentacene functions as both a light absorbing layer and a channel layer. After the device is manufactured, it will be illuminated with green light and measured the electrical characteristics, and calculate the photo-responsivity, photo-sensitivity, EQE and detectivity.

[1] Qiang Ren, Qingsheng Xu, Hongquan Xia, Xiao Luo, Feiyu Zhao, Lei Sun, and Yao Li, Organic Electronics, vol. 51, p. 142 (2017).
[2] Shuo-Huang Yuan, “Effect of Metallic Nanoparticles on the Photodetection Behavior of an Organic Phototransistor,” National Central University (2016).
[3] G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, Nature Nanotechnol., vol. 7, p. 363 (2012).
[4] B. Lamprecht, G. Schider, R. T. Lechner, H. Ditlbacher, J. R. Krenn, A. Leitner, and F. R. Aussenegg, Phys. Rev. Lett., vol. 84, p. 4721 (2000).
[5] R. Zakaria, W. K. Lin, and C. C. Lim, Appl. Phys. Exp., vol. 5, p. 082002 (2012).
[6] Wenli Lv , Lili Du , Yingquan Peng , Zhong ZhaoY. L. Loo, R. L. Willett, K. W. Baldwin, and J. A. Rogers, Applied Physics Letters, vol. 81, p.562 (2002).
[7] R. Schroeder, L. A. Majewski, M. Grell, J. Maunoury, J. Gautrot, P. Hodge, and M Turner, Appl. Phys. Lett., vol. 87, p.113501 (2005).
[8] Bang Joo Song, Kihyon Hong, Woong-Kwon Kim, Kisoo Kim, Sungjun Kim, and
Jong-Lam Lee, J. Phys. Chem. B, vol. 114, p. 14854 (2010).
[9] S. T. Zhang, X. M. Ding, J. M. Zhao, H. Z. Shi, J. He, Z. H. Xiong, H. J. Ding, E. G. Obbard, Y. Q. Zhan, W. Huang, and X. Y. Hou, Appl. Phys. Lett., vol. 84, p.425 (2004).
[10] X. J. Wang, J. M. Zhao, Y. C. Zhou, X. Z. Wang, S. T. Zhang, Y. Q. Zhan, Z. Xu, H. J. Ding, G. Y. Zhong, H. Z. Shi, Z. H. Xiong, Y. Liu, Z. J. Wang, E. G. Obbard, X. M. Ding, W. Huang, and X. Y. Hou, J. Appl. Phys., vol. 95, p.3828 (2004).
[11] V. Subramanian, J. M. J. Frechent, P. C. Chang, and S. K. Volkman, Proceeding of the IEEE, vol. 93, p. 1330 (2005).
[12] H. Kim, S. Sohn, D. Jung, W. J. Maeng, H. Kim, T.S. Kim, J. Hahn, S. Lee, Y. Yi, and M. H. Cho, Organic Electronics, vol. 9, p. 1140 (2008).
[13] M. W. Shin and S. H. Jang, Organic Electronics, vol. 13, p.767 (2012).
[14] T. Ahn, H. Jung, H. J. Suk, and M. H. Yi, Synthetic Metals, vol. 159, p. 1277 (2009).
[15] A. Tsumura, H. Koezuka, and T. Ando, Appl. Phys. Lett., vol. 49, p. 1210 (1986).
[16] A. Assadi, C. Svensson, M. Willander, and O. Ingans, Appl. Phys. Lett., vol. 53. p. 195 (1988).
[17] J. Paloheimo, E. Punkka, H. Stubb, P.Kuivalainen, in Lower Dimensional Systems and Molecular Devices, Proceedings of NATO ASI, Spetses, Greece (Ed: R. M. Mertzger), Plenum, New York, (1989).
[18] Z. Bao, A. Dodabalapur, and A. J. Lovinger, Appl. Phys. Lett., vol. 69, p. 4108 (1996).
[19] H. Sirringhaus, N. Tessler, R. H. Friend, Science, vol. 280, p. 1741 (1998).
[20] F. Ebisawa, T. Kurokawa, S. Nara, Journal of Applied Physics, vol. 54, p. 3255 (1983).
[21] J. H. Burroughes, C. A. Jones, and R. H. Friend, Nature, vol. 335, p. 137 (1988).
[22] H. Fuchigami, A. Tsumura, and H. Koezuka, Appl. Phys. Lett., vol. 63, p. 1372, (1993).
[23] F. Garnier, A. Yassar, R. Hajlaoui, G. Horowitz, F. Deloffre, B. Servet, S. Ries, and P. Alnot, Journal of the American Chemical Society, vol. 115, p. 8716 (1993).
[24] B.Servet, G. Horowitz, S. Ries, O. Lagorsse, P. Alnot, A. Yassar, F. Deloffre, P. Srivastava, R. Hajlaoui, P. Lang, and F. Garnier, Chemistry of Materials, vol. 6, pp 1809 (1994).
[25] A. Dodabalapur, L. Torsi, and H. E. Katz, Science, vol. 268, p. 270 (1995).
[26] C. D. Dimitrakopoulos, B. K. Furman, T. Graham, S. Hegde, and S. Purushothaman, Synthetic Metals, vol. 92, p. 47 (1998).
[27] H. E. Katz, L. Torsi, and A. Dodabalapur, Chemistry of Materials, vol. 7, p. 2235 (1995).
[28] R. Hajlaoui, D. Fichou, G. Horowitz, B. Nessakh, M. Constant, and F. Garnier, Advanced Material, vol. 9, p. 557 (1997).
[29] R. Hajlaoui, G. Horowitz, F. Garnier, A. Arce-Brouchet, L. Laigre, A. Elkassmi, F. Demanze, and F. Kouki, Advanced Material, vol. 9, p. 389 (1997).
[30] J. H. Schön, Ch. Kloc, and B. Batlogg, Organic Electronics, vol. 1, p. 57 (2000).
[31] Y. -Y. Lin, D. J. Gundlach, S. Nelson, and T. N. Jackson, IEEE Electron Device Letters, vol. 18, p. 606 (1997).
[32] C. D. Dimitrakopoulos, A. R. Brown, A. Pomp, Journal of Applied Physics, vol. 80, p. 2501 (1996).
[33] Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, “High Mobility Pentacene Organic Thin Film Transistors,” 54th Annual Device Research Conference Digest, New York, p. 80 (1996).
[34] G. Horowitz, X. Peng, D. Fichou, and F. Garnier, Synthetic Metals, vol. 51, p. 419 (1992).
[35] R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A. F. Hebard, and R. M. Fleming, Applied Physics Letter, vol. 67, p. 121 (1995).
[36] J. Kastner, J. Paloheimo, and H. Kuzmany, in Solid State Sciences, edited by H. Kuzmany, M. Mehring, and J. Fink, Springer, New York, p. 512 (1993).
[37] A. R. Brown, D. M. de Leeuw, E. J. Lous, and E. E. Havinga, Synthetic Metals, vol. 66, p. 257 (1994)
[38] J. G. Laquindanum, H. E. Katz, A. Dodabalapur, and A. J. Lovinger, Journal of the American Chemical Society, vol. 118, p. 11331 (1996).
[39] G. Guillaud, M. Al Sadound, and M. Maitrot, Chemical Physics Letters, vol. 167, p. 503 (1990).
[40] Z. Bao, A. J. Lovinger, and J. Brown, Journal of the American Chemical Society, vol. 120, p. 207 (1998).
[41] H. Fuchigami, A. Tsumura, and H. Koezuka, Applied Physics Letter, vol. 63, p. 1372 (1993).
[42] Ke Zhou, Huanli Dong, Hao-li Zhang and Wenping Hu, Chem. Phys, vol. 16, p. 22448 (2014).
[43] J. M. Shaw, and P. F. Seidler, “Organic Electronic: Introduction,” IBM Journal of Research and Development, vol.45, no.1, p.3 (2001).
[44] M. Baldo, M. Deutsch, P. Burrows, H. Gossenberger, M. Gerstenberg, V. Ban, and S. Forrest, Advanced Material, vol. 10, p. 234 (1998).
[45] E. M. Conwell, Physical Review Letters, vol. 103, p. 51 (1956).
[46] N. F. Mott, Canadian Journal of Physics. vol. 34, p. 1356 (1956).
[47] S. Locci, “Modeling of Physical and Electrical Characteristics of Organic Thin Film Transistors,” Masters Thesis, University of Cagliari (2009).
[48] P. G. Le Comber, and W. E. Spear, Physical Review Letters, vol. 25, p. 509 (1970).
[49] C.W.Kuo, “Properties of Carriers Transportation in Organic Thin Film Transistors,” Masters Thesis, National Cheng Kung University, Tainan, Taiwan (2006).
[50] Y. X. Ma, W. M. Tang, and P. T. Lai, IEEE Electron Device Letters, vol. 39, no. 10, p.1516 (2018).
[51] L. Guo, X. Zhu, S. Sun, C. Cong, Q. Zhou, X. Sun, and Y. Liu, Organic Electronics, vol. 69, p. 308 (2019).
[52] R. Ye, M. Baba, K. Suzuki, Y. Ohishi, K. Mori, Thin Solid Films, vol. 464-465, p. 437 (2004).
[53] D. Kumaki, T. Umeda, and S. Tokito, Applied Physics Letter, vol. 92, p. 093309 (2008).
[54] Y. H. Noh, Y. Park, S. M. Seo, and H. H. Lee, Organic Electronics, vol. 7, p. 271 (2006).
[55] Y. Roichman and N. Tessler, Applied Physics Letter, vol. 80, p. 151 (2002).
[56] I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, IEEE Transactions on Electron Devices, vol. 48, no. 6 (2001).
[57] G. B. Blanchet, C. R. Fincher, and M. Lefenfeld, Applied Physics Letters, vol. 84, no. 2 (2004).
[58] A. R. Brown, C. P. Jarrett, D. M. de Leeuw and M. Matters, Synthetic Metals, vol. 88, p. 37 (1997).
[59] A.Pierre, A.Gaikwad, and A.C.Arias, Nature Photonics, vol. 11, p. 193 (2017).
[60] Richard D. Yang, T. Gredig, Corneliu N. Colesniuc, Jeongwon Park, Ivan K. Schuller, William C. Trogler, and Andrew C. Kummel, Appl. Phys. Lett., vol. 90, p. 263506 (2007).
[61] S. C. Chen, K.H. Wu, J.-X. Li, A. Yabushita, S.H. Tang, C. W. Luo, J.Y. Juang, H.C.Kuo, Y.L. Chueh, Sci. Rep., vol. 5, p. 18354 (2015).
[62] Chen Dongxian, “Metal Oxides as the Buffer Layers for Organic Thin-Film Transistors,” Submitted to Institute of Display College of Electrical and Computer Engineering Nation Chiao Tung University, Hsinchu, Taiwan (2005).
[63] Lin Jingzhe, “Zinc oxide nanoparticle thin films by thermal evaporation and their optical properties,” National Taiwan University of Science and Technology, Taipei, Taiwan (2016).
[64] L. Guo, X. Zhu, S. Sun, C. Cong, Q. Zhou, X. Sun, and Y. Liu, Organic Electronics, vol. 69, p. 308 (2019).
[65] Y. X. Yuan, C. Y. Han, W. M. Tang, and P. T. Lai, IEEE Electron Device Lett., vol. 39, no. 7, p. 963 (2018).
[66] A. Yu, Q. Qi, P. Jiang, and C. Jiang, Synthetic Metals, vol. 159, p. 1467 (2009).
[67] W. C. Shin, H. Moon, S. Yoo, and B. J. Cho, 10th IEEE International Conference on Nanotechnology (2010).
[68] B. Xu, P. Wang, J. Zhong, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96861Q (2016).
[69] N. V. Cvetkovic, K. Sidler, V. Savu, J. Brugger, D. Tsamados, and A. M. Ionescu, Microelectronic Engineering, vol. 88, p. 2496 (2011).
[70] Y. X. Ma, W. M. Tang, and P. T. Lai, IEEE International Conference on Electron Devices and Solid-State Circuits (2018).
[71] K. D. Kim and C. K. Song, Appl. Phys. Lett., vol. 88, p. 233508 (2006).
[72] S. Lee, D. Yun, S. Rhee, and K. Yong, J. Mater. Chem., vol.19, p. 6857 (2009).
[73] D. Yun, S. Lim, T. Lee, and S. Rhee, Organic Electronics, vol. 10, p. 970 (2009).
[74] S. Yuan, Z. Pei, H. Lai, C. Chen, P. Li, and Y. Chan, IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 11, p. 1186 (2015).
[75] G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. Pelayo Garcia de Arquer, F. Gatti and Frank H. L. Koppens, Nature Nanotechnology, vol. 7, p. 363 (2012).
[76] S. Gorgolis, A. Giannopoulou, D. Anastassopoulos, and P. Kounavis, J. Appl. Phys., vol. 112, p. 013101 (2012).
[77] S. Nam, J. Seo, S. Park, S. Lee, J. Jeong, H. Lee, H. Kim, and Y. Kim, ACS Appl. Mater. Interfaces, vol. 5, p. 1385−1392 (2013).
[78] X. Liu, M. Zhang, G. Dong, X. Zhang, Y. Wang, L. Duan, L. Wang, and Y. Qiu, Organic Electronics, vol. 15, p.1664 (2014).
[79] X. Liu, E. K. Lee, D. Y. Kim, H. Yu, and J. H. Oh, ACS Appl. Mater. Interfaces, vol. 8, p. 7291 (2016).
[80] Suman Kalyan Samanta, Inho Song, Jong Heun Yoo, and Joon Hak Oh, ACS Appl. Mater. Interfaces, vol. 10, p.32444 (2018).
[81] Chulyeon Lee, Hyemi Han, Myeonghun Song, Jooyeok Seo, Hwajeong Kim, and Youngkyoo Kim, IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 2, p.1 (2018).
[82] Qian-Min Wang and Zhi-Yong Yang, Carbon, vol. 138, p. 90 (2018).
[83] Y. Wang, L. Zhu, T. Wang, Y. Hu, Z. Deng, Q. Cui, Z. Lou, Y. Hou, and F. Teng, Organic Electronics, vol.62, p. 448 (2018).
[84] Guiheng Wang, Kaiqiang Huang, Zhen Liu, Yuchang Du, Xiaohong Wang, Hongbo Lu, Guobing Zhang, and Longzhen Qiu, ACS Appl. Mater. Interfaces, vol. 10, p.36177 (2018).
[85] Y. Che, G. Zhang, Y. Zhang, X. Cao, M. Cao, Y. Yu, H. Dai, J. Yao, Optics Communications, vol. 425 p. 161 (2018).
[86] K. Yeliu, J. Zhong, X. Wang, Y. Yan, Q. Chen, Y. Ye, H. Chen, and T. Guo, Organic Electronics, vol. 67, p. 200 (2019)
[87] Erwin Kessels, “ALD presentation Vacuum Expo,” Technische Universiteit Eindhoven.
[88] W.M.M. Kessels and M. Putkonen, MRS Bulletin, vol. 36, 11, p. 907 (2011).