本論文主要探討微波通入氧氣退火High-k氧化物閘極絕緣層應用於可撓式元件上，我們起初探討High-k氧化物閘極絕緣層塑膠基板的製程，藉此找到High-k氧化物閘極絕緣層應用於塑膠基板的最佳製程條件，最後再將此製程條件進行微波通氧退火增強電特性。
第一部分我們利用原子層沉積沉積Al2O3和HfO2與旋轉塗佈之PVP比較，藉此發現High-k閘極絕緣層的效果顯著。其次，透過交互疊層Al2O3和HfO2結合各自的優點，我們從中發現互疊層後，由於粗糙度下降，使五苯環沉積晶粒較大，不過HfO2較不緻密，影響了其off state的特性，故我們增加閘極絕緣層厚度，犧牲了些許的Ion，換取更好的S.S.、Ion/Ioff。
第二部分結構與第一部分相同，此部分是在閘極絕緣層上做表面處理，將沉積好ALD的多層交疊之High-k閘極絕緣層，在通入氧氣下的腔體，施予50W的微波功率，藉此消除表面不利於pentacene成長的O-H鍵，以的道教大的晶格尺寸，以利載子傳輸，並由遲滯、sttess、以及撓曲多次後數據，加以說明表面改善不僅提升特性，同時增加電晶體穩定度，並利用FT-IR與Contact angle證明O-H鍵結得減少，及使用SEM證明，撓曲對主動層劣化的影響造成電特性的下降。

This paper mainly discusses the application of microwave-induced oxygen to anneal High-k gate oxide insulating layer on flexible devices. We initially discussed the process of high-k gate oxide insulating layer plastic substrate to find the optimal process conditions of the material gate insulating layer applied to the plastic substrate, and finally the best process conditions are subjected to microwave-induced oxygen annealing to enhance the electrical characteristics.
In the first part, we compared the deposition of Al2O3 and HfO2 by Atomic Layer Deposition (ALD) with spin-coated PVP, and found that the effect of High-k gate oxide insulating layer is remarkable. Secondly, by combining the advantages of Al2O3 and HfO2 in alternating stacks, we found that after interstacking, due to the reduction in roughness, the pentacene deposition grain sizes are larger, but HfO2 is less dense, which affects the characteristics of its off state. Therefore, we increased the thickness of the gate oxide insulation layer and sacrificed some Ion in exchange for better subthreshold swing and Ion/Ioff.
The structure of the second part is the same as that of the first part. This part is to perform surface treatment on the gate oxide insulating layer area. The ALD multi-layer overlapping high-k gate oxide insulating layer is applied to the cavity under oxygen supply, 50W microwave power, thereby eliminating the O-H bonding on the surface that is not conducive to the growth of pentacene. The larger grain sizes lead to facilitate carrier transmission, and the stability after multiple times of hysteresis, stress, and many times of mechanical bending to small bending radius. To illustrate the surface improvement not only improve the electrical characteristics, but also increase the stability of the transistor, and use FT-IR and contact angle to prove the reduction of O-H bonding, and use SEM to prove that the effect of deflection on the deterioration of the active layer causes the reduction of the electrical characteristics.

[1] V. Subramanian, J. M. J. Frechent, P. C. Chang, and S. K. Volkman”, Progress Toward Development of All-Printed RFID Tags: Materials, Processes, and Devices”,44Proceeding Of The IEEE, Vol. 93, p. 1330 (2005).
[2] Z. Tao, J. T. Mason, R. Dieckmann, and George G. Malliaras, Applied Physics Letters, Vol. 1, p.4643 (2002).
[3] J. J., S. Nam, J. H., J. J. Park, J. Im, C. E. Park, and J. M. Kim, Journal of Material Chemistry, Vol. 22, p.1054 (2012).
[4] T. T. Kawase, T. Shimoda, C. Newsome, H. Sirringhaus, and R. H. Friend, Thin Solid Films, Vol. 438, p.279 (2003).
[5] Y. L. Loo, R. L. Willett, K. W. Baldwin, and J. A. Rogers, Applied Physics Letters, Vol, 81, p.562 (2002).
[6] R. Schroeder, L. A. Majewski, M. Grell, J. Maunoury, J. Gautrot, P. Hodge, and M Turner, Applied Physics Letters, Vol. 87, p.113501 (2005).
[7] T. Ji, J. Xie and V. K. Varadan, Proceedings of SPIE, Vol. 5763, p. 77 (2005).
[8] https://www.azom.com
[9] R. Ye, M. Baba, K. Suzuki, Y. Ohishi, and K. Mori, Thin Solid Films, Vol. 464-465, p. 437 (2004).
[10] M. W. Shin and S. H. Jang, Organic Electronics, Vol. 13, p.767–770 (2012).
[11] C. B. Park and J. D. Lee, Current Applied Physics, Vol. 13, p.170-175 (2013).
[12] T. Ahn, H. Jung, H. J. Suk, and M. H. Yi, Synthetic Metals, vol. 159, p. 1277 (2009).
[13] A. Tsumura, H. Koezuka, and T. Ando, Applied Physics Letters, vol. 49, p. 1210 (1986).
[14] A. Assadi, C. Svensson, M. Willander, and O. Ingans, Applied Physics Letters, vol. 53. p. 195 (1988).
[15] J. Paloheimo, E. Punkka, H. Stubb, P.Kuivalainen, in Lower Dimensional Systems and Molecular Devices, Proceedings of NATO ASI, Spetses, Greece (Ed: R. M. Mertzger), Plenum, New York, (1989).
[16] Z. Bao, A. Dodabalapur, and A. J. Lovinger, Applied Physics Letters, vol. 69, p. 4108 (1996).
[17] H. Sirringhaus, N. Tessler, and R. H. Friend, Science, vol. 280, p. 1741 (1998).
[18] F. Ebisawa, T. Kurokawa, and S. Nara, Journal of Applied Physics, vol. 54, p. 3255 (1983).
[19] J. H. Burroughes, C. A. Jones, and R. H. Friend, Nature, vol. 335, p. 137 (1988).
[20] H. Fuchigami, A. Tsumura, and H. Koezuka, Applied Physics Letters, vol. 63, p. 1372, (1993).
[21] F. Garnier, A. Yassar, R. Hajlaoui, G. Horowitz, F. Deloffre, B. Servet, S. Ries, and P. Alnot, Journal of the American Chemical Society, vol. 115, p. 8716 (1993).
[22] B.Servet, G. Horowitz, S. Ries, O. Lagorsse, P. Alnot, A. Yassar, F. Deloffre, P. Srivastava, R. Hajlaoui, P. Lang, and F. Garnier, Chemistry of Materials, vol. 6, pp 1809 (1994).
[23] A. Dodabalapur, L. Torsi, and H. E. Katz, Science, vol. 268, p. 270 (1995).
[24] C. D. Dimitrakopoulos, B. K. Furman, T. Graham, S. Hegde, and S. Purushothaman, Synthetic Metals, vol. 92, p. 47 (1998).
[25] H. E. Katz, L. Torsi, and A. Dodabalapur, Chemistry of Materials, vol. 7, p. 2235 (1995).
[26] R. Hajlaoui, D. Fichou, G. Horowitz, B. Nessakh, M. Constant, and F. Garnier, Advanced Material, vol. 9, p. 557 (1997).
[27] R. Hajlaoui, G. Horowitz, F. Garnier, A. Arce-Brouchet, L. Laigre, A. Elkassmi, F. Demanze, and F. Kouki, Advanced Material, vol. 9, p. 389 (1997).
[28] J. H. Schön, Ch. Kloc, and B. Batlogg, Organic Electronics, vol. 1, p. 57 (2000).
[29] Y. -Y. Lin, D. J. Gundlach, S. Nelson, and T. N. Jackson, IEEE Electron Device Letters, vol. 18, p. 606 (1997).
[30] C. D. Dimitrakopoulos, A. R. Brown, and A. Pomp, Journal of Applied Physics, vol. 80, p. 2501 (1996).
[31] Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, “High Mobility Pentacene Organic Thin Film Transistors,” 54th Annual Device Research Conference Digest, New York, p. 80 (1996).
[32] G. Horowitz, X. Peng, D. Fichou, and F. Garnier, Synthetic Metals, vol. 51, p. 419 (1992).
[33] R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A. F. Hebard, and R. M. Fleming, Applied Physics Letter, vol. 67, p. 121 (1995).
[34] J. Kastner, J. Paloheimo, and H. Kuzmany, in Solid State Sciences, edited by H. Kuzmany, M. Mehring, and J. Fink, Springer, New York, p. 512 (1993).
[35] A. R. Brown, D. M. de Leeuw, E. J. Lous, and E. E. Havinga, Synthetic Metals, vol. 66, p. 257 (1994)
[36] J. G. Laquindanum, H. E. Katz, A. Dodabalapur, and A. J. Lovinger, Journal of the American Chemical Society, vol. 118, p. 11331 (1996).
[37] G. Guillaud, M. Al Sadound, and M. Maitrot, Chemical Physics Letters, vol. 167, p. 503 (1990).
[38 ]Z. Bao, A. J. Lovinger, and J. Brown, Journal of the American Chemical Society, vol. 120, p. 207 (1998).
[39] H. Fuchigami, A. Tsumura, and H. Koezuka, Applied Physics Letter, vol. 63, p. 1372 (1993).
[40] Ke Zhou, Huanli Dong, Hao-li Zhang, and Wenping Hu, Chem. Phys, vol. 16, p. 22448 (2014).
[41] J. M. Shaw and P. F. Seidler, IBM Journal of Research and Development, vol.45, no.1, p.3 (2001).
[42] M. Baldo, M. Deutsch, P. Burrows, H. Gossenberger, M. Gerstenberg, V. Ban, and S. Forrest, Advanced Material, vol. 10, p. 234 (1998).
[43] E. M. Conwell, Physical Review Letters, vol. 103, p. 51 (1956).
[44] N. F. Mott, Canadian Journal of Physics. vol. 34, p. 1356 (1956).
[45] S. Locci, Masters Thesis, University of Cagliari (2009).
[46] P. G. Le Comber, and W. E. Spear, Physical Review Letters, vol. 25, p. 509 (1970).
[47] R. Ye, M. Baba, K. Suzuki, Y. Ohishi, and K. Mori, Thin Solid Films, vol. 464-465, p. 437 (2004).
[48] D. Kumaki, T. Umeda, and S. Tokito, Applied Physics Letter, vol. 92, p. 093309 (2008).
[49] Y. H. Noh, Y. Park, S. M. Seo, and H. H. Lee, Organic Electronics, vol. 7, p. 271 (2006).
[50] Y. Roichman and N. Tessler, Applied Physics Letter, vol. 80, p. 151 (2002).
[51] I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, IEEE Transactions on electron devices, vol. 48, no. 6 (2001).
[52] G. B. Blanchet, C. R. Fincher, and M. Lefenfeld, Applied Physics Letters, vol. 84, no. 2 (2004).
[53] A. R. Brown, C. P. Jarrett, D. M. de Leeuw and M. Matters, Synthetic Metals, vol. 88, p. 37 (1997).
[54] S. M. Sze, Physics of Semiconductor Devices, Second Edition, Wiley, New York, CH. 7 (1981).
[55] A. R. Brown, C. P. Jarrett, D. M. de Leeuw, and M. Matters, Synthetic Metals, Vol. 88, p. 37 (1997).
[56] F. C. Chen, T. D. Chen, B. R. Zeng, and Y. W. Chung, Semiconductor Science and Technology, Vol. 26, p. 034005 (2011).
[57] D. J. Yun, S. H. Lim, T. W. Lee, and S. W. Rhee, Organic Electronics, Vol. 10, p. 970 (2009).
[58] 曾東雄，「可撓式塑膠基板上研製有機薄膜電晶體和場效電晶體」，碩士論文，國立成功大學，台南 (2009).
[59] E. Kessels, “ALD presentation Vacuum Expo,” Technische Universiteit Eindhoven.
[60] W.M.M. Kessels and M. Putkonen, MRS Bulletin, vol. 36, 11, p. 907 (2011).
[61] D. J. Griffiths, Introduction to Electrodynamics,USA(1999)