本論文利用光子調制反射光譜(PR)、壓電調制反射光譜(PzR)和光激螢光光譜(PL)來研究以氣態分子束磊晶法成長在GaAs基板上不同Sb成份之GaAs1-xSbx薄膜及其退火光學特性。由PzR、PR及PL光譜，可觀察GaAs1-xSbx訊號隨著Sb含量增加而產生紅移，從入射光沿著E‖[ ]及E‖[ ]兩極化方向之PR光譜，得知GaAs1-xSbx薄膜之非對稱性質隨Sb成份增加而更趨於明顯。藉由比較PR及PzR實驗可分辨出重電洞(heavy hole)與輕電洞(light hole)躍遷信號。並得到因應力所造成價帶分裂量隨著Sb的成份越高而增加。最後，藉由溫度變化的PR量測得到重電洞及輕電洞兩躍遷訊號隨溫度變化(15K-300K)的情形，利用Varshni及Bose-Einstein兩方程式來得到其相關的溫度參數並加以討論。

The optical properties of GaAs1-xSbx layers grown on GaAs substrates via gas-source molecular beam epitaxy have been characterized by polarized photoreflectance (PR), piezoreflectance (PzR), and photoluminescence (PL). The PR, PzR, and PL spectra exhibited red shift of the band edge transition features with increasing Sb content. A more pronounced anisotropic character along [ ] and [ ] polarizations, with respect to the increase of Sb content, has also been observed by the polarized PR spectra. By comparison of the relative intensity of PzR and PR spectra, the identification of conduction to heavy-hole (HH) band and conduction to light-hole (LH) band transitions originated from the strained induced valence band splitting has been accomplished. The results indicate increases of the valence band splitting with increasing of Sb contents.
The temperature dependence of near band edge transition energies as a function of temperature from 15–300 K are analyzed using the Varshni expression and an expression containing the Bose–Einstein occupation factor for phonons. The parameters that describe the temperature variations of the near band edge transition energies are evaluated and discussed.

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