如今，3D TLC快閃記憶體以其高容量和低成本成為了主流存儲介質。
但是，3D TLC快閃記憶體存在一些可靠性問題，例如保留錯誤和讀取乾擾錯誤，
這些問題可能會隨著時間的推移而累積並超過ECC(糾錯碼)的除錯量。
特別是3D TLC快閃記憶體在早期使用階段，其P/E週期較低，但由於橫向電荷遷移，可能會嚴重遭受保留錯誤影響。
在本文中，我們將提出一種編碼策略，以抑制橫向電荷遷移並減少3D TLC快閃記憶體處於低P/E週期時的保留錯誤。
根據實驗結果，我們可以證明，與以前的方法相比，所提出的編碼策略可以更有效地減少保留錯誤。

Nowadays, 3D TLC NAND flash memory has become the mainstream storage medium because of its high capacity and low cost. However, 3D TLC NAND flash memory has some reliability issues such as retention errors and read disturb errors that may accumulate over time and exceed the ECC (Error Correction Code) capacity. In particular, when 3D TLC NAND flash memory is in the early use stage, it has low P/E cycles but could seriously suffer the retention errors due to the lateral charge migration. In the paper, we will propose a coding strategy to suppress the lateral charge migration and also reduce the retention errors when 3D TLC NAND flash memory is in low P/E cycles. According to the experimental results, we can show that the proposed coding strategy can effectively reduce the retention errors when compared to the previous methods.

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