本研究係利用射頻磁控濺鍍，沉積氧化鋅鋁(ZnO:Al/AlZnO，AZO)透明導電膜於玻璃基板，探討不同ZnO緩衝層鍍膜參數(如射頻功率、濺鍍壓力、氧化鋅緩衝層膜厚、退火溫度)對AZO薄膜的結構、表面形態、電阻率及光穿透率的影響，配合灰關聯-田口法分析，尋求多重品質特性之最佳ZnO緩衝層鍍製參數。
實驗顯示，ZnO緩衝層對AZO薄膜[002]方向擇優取向具有強化的作用，有助於提升AZO薄膜的結晶性，所獲得AZO的平均晶粒大小約10-23 nm。經變異數分析顯示，ZnO緩衝層的射頻功率、膜厚分別對AZO的電阻率與光穿透率有相當之影響。此外，應用灰關聯分析可預測出較佳ZnO緩衝層的沉積條件。
實驗結果亦顯示使用ZnO緩衝層的AZO透明導電膜(AZO/ZnO/glass)，與沒有緩衝層(AZO/glass)相較，其電阻率下降，光穿透率提升。

Transparent conductive films of Al-doped zinc oxide (ZnO:Al/AlZnO，AZO) were deposited on glass substrates under various ZnO buffer layer deposition conditions (r.f. power, sputtering pressure, ZnO thickness, and annealing temperature) using radio frequency (r.f.) magnetron sputtering at room temperature. This work investigates the influence of ZnO buffer layer on structural, electrical, and optical properties of AZO films. The use of grey-based Taguchi method to determine the ZnO buffer layer deposition processing parameters by considering multiple performance characteristics
The experimental results showed that the AZO thin film favored (002) orientation as ZnO buffer was applied. The average crystallite size of AZO films was about 10–23 nm. ANOVA results indicate that ZnO sputtering power and ZnO thickness significantly affect the electrical resistivity and optical transmittance of AZO. The deposition conditions of ZnO buffer layer by applying grey theory prediction design show that the crystallinity and optical transmittance of AZO films increase, whereas the electrical resistivity decreases.
Experimental results for the AZO films with ZnO buffer layer (AZO/ZnO/glass) that electrical resistivity decreases and optical transmittance increases comparing to those without ZnO buffers at optimized deposition condition.

參考文獻
1.楊明輝，透明導電膜，藝軒圖書出版社(2006).
2.W. J. Jeong, G. C. Park, “Electrical and optical properties of ZnO thin film as a function of deposition parameters,” Solar Energy Materials & Solar Cells, Vol. 65, pp. 37-42 (2001).
3.T. Lim, H. Lee, “Highly oriented ZnO thin films deposited on Ru/Si substrates,” Thin Solid Films, Vol. 353, pp. 12-15 (1999).
4.G. J. Exarhos, S. K. Sharma, “Influence of processing variables on the structure and properties of ZnO films,” Thin Solid Films, Vol. 270, pp. 27-32 (1995).
5.I. Safi, R. P. Howson, “The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant,” Thin Solid Films,Vol. 115, pp. 343-344 (1999).
6.Y. Igasaki, H. Saito, “The Effects of Zinc Diffusionon on The Electrical and Optical Properties of ZnO:Al Films Prepared by RF Reactive Sputtering," Thin Solid Films, Vol. 199, pp. 223-230 (1991).
7.E. J. Tarsa, J. H. English and J. S. Speck, “Pulsed Laser Deposition of Oriented In2O3 on (001) InAs, MgO, and Yttria-stabilized zirconia,” Appl. Phys. Lett, Vol. 62, p. 2332 (1993).
8.S. J .Chang, Y. K. Su, “ZnO epitaxial layers grown on nitridated Si (100) substrate with HT-GaN/LT-ZnO double buffer,” Journal of Crystal Growth, Vol. 310, pp. 290-294 (2008).
9.T. Matsuda, M. Furuta, “Influence of amorphous buffer layers on the crystallinity of sputter -deposited undoped ZnO films,” Journal of Crystal Growth, Vol. 310, pp. 31–35 (2008).
10.K. H. Bang , D. K. Hwang, “Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by radio-frequency magnetron sputtering,” Applied Surface Science, Vol. 207,pp. 359-364 (2003).
11.蘇青森，“真空技術”，東華書局(1993).
12.D. L. Simth, “Thin-Film Deposition Principles and Practice,” The McGraw-Hill Companies, pp. 121-123 (1999).
13.H. L. Hartangel, A.K. Jain and C.Jagadish, “Semiconducting Transparent Thin Films,” published by Institute of Physics Publication, p. 17 (1995).
14.D. Paraguay, J. Morales, L. Estrada, E. Andrade and M.-Miki Yoshida, “Influence of Al, In, Cu, Fe and Sn dopants in the microstructure of zinc oxide thin films obtained by spray pyrolysis,” Thin Solid Films, ”Vol.366 , pp. 16-27 (2000).
15.B. H. Choi, H.B.Im, “Optical and electrical properties of Ga2O3 doped ZnO films prepared by r.f. sputtering,” Thin Solid Film, Vol. 193, pp. 712 (1990).
16.S. Major, S. Kumar, M. Bhatnagar and K. L.Chopra, “Effect of hydrogen plasma treatment on transparent conducting oxides,” Apply. Phys. Lett, Vol. 49,pp .394 (1989).
17.K. L. Chopra, S. Major and D.K.Pandya, “Transparent conductor – a status review,” Thin Solid Film, Vol. 102 ,pp. 712 (1990).
18.W. Tang, D. C. Cameron, “Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process,” Thin Solid Film, Vol. 238, pp. 83-87 (1994).
19.E. L. Paradis, A. J. Shuskus, “RF Sputtered Epitaxial ZnO Films on Sapphire for Integrated Optics,” Thin Solid Films, Vol. 38, pp. 131-141 (1976).
20.T. Minami, H. Sato, K. Ohashi, T. Tomofuji and S. Takata, "Conduction mechanism of highly conductive and transparent zinc oxide thin films prepared by magnetron sputtering", Journal Crystal Growth ,Vol. 117, pp. 370 (1992).
21.H. Ko, W. P. Tai and Y. S. Kim, "Growth of Ai-doped ZnO thin films by pulsed DC magnetron sputtering," Journal Crystal Growth, Vol. 277, pp. 352 (2005).
22.G. J. Exarhos, S. K. Sharma, “Influence of processing variables on the structure and properties of ZnO films,” Thin Solid Films ,Vol. 270, pp. 27-32 (1995).
23.M. N. Islam, T.B.Ghosh, K. L. Chopra and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films,” Thin Solid Film, Vol. 280, pp. 20-25 (1994).
24.T. S. Moss, ”The interpretation of the properties of Indium Antimonide,” Phys. Soc. London Sect. B, Vol. 67, pp. 775-782. (1954)
25.陳靜怡，“氧化鋅中介層對ITO透明導電膜性質影響”，國立成功大學材料科學及工程研究所碩士論文(2002).
26.J. Hu, R. G. Gorden, “Textured aluminium-doped zinc oxide thin films fromatmosphere pressure chemical-vapor deposition,” Journal of Applied Physics, Vol. 71, pp. 880-890 (1992).
27.E. S. Shim et al., “Effect of The Variation of Films Thickness on The Structural and Optical Properties of ZnO Thin Films Deposition on Sapphire Substrate Using PLD,” Apply Surface. Science, Vol. 186, pp. 474-476 (2002).
28.C. Eberspaoher, A. L. Fahrenbruch and R. H. Bube, “Properties of ZnO films deposited onto InP by spray pyrolysis,” Thin Solid Films, Vol. 136, pp. 1-10 (1986).
29.H. W. Lehmann, R. Widmer, “Properties and Properties of Reactively Co -sputtered Transparent Conducting Films,” Thin Solid Films, Vol. 27, pp. 359-368 (1975).
30.T. Minami, H. Sato, T. Sonoda, H. Nanto and S. Takata,“Influence of substrate and target temperature on properties of transparent and conductive doped ZnO thin films prepared by RF magnetron sputtering,” Thin Solid Film , Vol. 171, pp. 307-311 (1989).
31.T Minami, H. Sato and S. Takata, “Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation,” Journal of Vacuum Science and Technology, Vol. 22, pp. 1711-1717 (2004).
32.吳富強，產品穩健設計-田口方法之原理與應用，全威圖書(1997).
33.張偉哲、溫坤禮、張廷政，灰關聯模型方法與應用，高立圖書有限公司(2003).
34.N. Fujimura, T. Nishihara, “Control of preferred orientation for ZnOx films: control of self-texture,” Journal Crystal Growth, Vol. 130,pp. 269 (1993)
35. M. Higuch. S. Uekusa, “Micrograin structure influence on electrical characteristics of sputtered indium tin oxide films,” Journal of Applied Physics, Vol. 74, pp 6710 (1993).
36.H. P. Klug, L. Alexander, X-Ray Diffraction Procedures for Polycrystalline and Amorphous Materials, 2nd ed, John Wiley and Sons, New York, (1974).
37.S. S. Lin, “Effect of thickness on the structural and optical properties of ZnO films by r.f. magnetron sputtering”, Surface. Coaingt. Technology, Vol. 185, pp. 222-227 (2004).
38.林素霞， “氧化鋅薄膜的特性改良及應用之研究”, 國立成功大學博士論文，台南(2003).
39.陳抗生，電磁場與電磁波，新文京出版社(2006).