為應用於紅外光科技技術，本論文欲製作發光波長落在4 ~ 12 μm此波段之紅外光熱輻射發光源元件。為了製作發光元件，以元件結構中之多晶矽層材料作為一電阻發熱層，並分別以晶圓廠代工製作之晶片及一般微機電製程製作之元件進行探討。下線晶片具週期性十字架形金屬孔洞作為濾波結構，微機電製程之元件則有二維週期孔洞之光子晶體結構作為濾波結構，可以針對特定設計波長範圍產生濾波效果。
下線之整體晶片尺寸大小為1.635 × 1.85 mm2，具十四種十字架參數之濾波器，經量測後電阻值皆大約是23 Ω。而微機電製程的部分也製作了發光波長位置在7.2 μm、9.2 μm之發光元件。藉著高摻雜濃度多晶矽層之低電阻率強化發光效率和設計元件長寬比，元件尺寸大小分別為4.45 × 2 mm2、4.45 × 2.4 mm2、4.45 × 2.8 mm2。發光功率經紅外光檢光器量測，下線晶片其發光功率密度皆可達7 mW/cm2以上，微機電製程之元件其發光功率達0.349 mW，發光功率密度最高達3.21 mW/cm2。波長變化情形，我們經由FTIR之量測結果可以發現在不同孔洞週期下，波峰之波長位置無明顯差異，需進一步探討濾波效應。

For the applications in infrared therapy and sensing, this thesis focuses on developing far infrared (FIR) thermal emitter devices, whose wavelength ranges from 4 ~ 12 μm. In order to manufacture thermal emitter, we utilize the polysilicon layer on silicon platform as the heating layer of the device structure. We try two platforms to fabricate FIR devices: standard CMOS foundry process and MEMS process. There are metal cross-shaped mesh filter in the FIR devices fabricated with the CMOS process, while there are two-dimensional photonic crystal structures in the MEMS devices. Devices on both platforms have periodic hole structures, which are designed to provide filtering effect in specific wavelength range. In addition to the narrowing of the emitted FIR spectrum, the periodic structure can have better confinement of the light emission direction.
The chip size of the CMOS integrated FIR emitters is 1.635 × 1.85 mm2 and the measured resistance is about 23 Ω for each device. The emitting power density of CMOS thermal emitters is measured by infrared photodetector and achieves 7 mW/cm2. The MEMS thermal emitters are designed to have peak wavelengths of 7.2 μm and 9.2 μm. The resitivity of the poly-Si layer is reduced with high doping concentration. The device size of the MEMS thermal emitters is 4.45 × 2 mm2, 4.45 × 2.4 mm2, and 4.45×2.8 mm2 respectively. The emitting power of the MEMS FIR light source can exceed 0.349 mW, and the emitting power density can reach 3.21 mW/cm2. According to the measured FIR spectrum, the wavelength filtering effect by using different periodic structures is not obvious by the FTIR measurement; and this requires further investigation.

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