本論文的長膜實驗採用一矽烷偶合劑γ-glycidoxypropyl-trimethoxysilane(γ-GPS)及辛氟甲苯(C7F8)為原料先驅物，藉由傳統平板式電漿輔助化學氣相沉積系統來成長低介電係數膜。以C7F8及 γ-GPS原料單獨長膜情況下，發現兩者皆具有形成架橋結構的潛力。以C7F8/ γ-GPS兩原料混合長膜的部分，發現C7F8/ γ-GPS進料比由5增加到16時，F含量從10.5%增加至36.2%，同時介電係數從4.26下降到2.5。藉由添加氧氣到電漿反應系統中，發現氧氣添加量從0.2 sccm增加至0.6 sccm時，薄膜中的Si與O含量分別由1.1%增加至33.4%，以及18.1%增加至58.6%。但C、F比例分別從66.5%減少至6.9%，以及14.3%減少至7.6%。其中氧氣添加量在0.4 sccm下成長出的薄膜再經過N2氣氛退火處理後，所得的介電係數(k=2.46)比退火前(k=3.59)來的低，推測可能是因孔隙化所造成。

Low-k films with a dielectric constant of about 2.5 have been successfully synthesized using octafluoroluene(C7F8) and γ-glycidoxypropyl-trimethoxysilane(γ-GPS) as the precursors in a parallel plate PECVD system at 6 W and 100℃ .It is formed that when C7F8/γ-GPS feed molar ratio decreases from 16 to 5, the atomic ratio of F in the films decreases from 36.2% to 10.5%, and the dielectric constant increased from 2.5 to 4.26. To increase Si and O content in the films, oxygen from 0.2 to 0.6 sccm were introduced, by which the atomic ratio of Si and O increases from 1.1% to 33.4% and 18.1% to 58.6%, respectively. However C and F decreases sharply from 66.5% to 6.9% and 14.3% to 7.6%, respectively. After annealing in N2 atomsphere, the dielectric constant was decreased to 2.46 when 0.4 sccm oxygen was added during reactions. The sharp decrease of dielectric constant is most plausibly due to the formation of the film porosity.

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