本論文主要是利用熱化學氣相沉積法成長二氧化矽奈米線，利用XeF準分子雷射系統對二氧化矽奈米線進行不同雷射能量之前處理與後處理，使用電子顯微鏡、富利葉轉換紅外線光譜儀及X射線光電子能譜儀光譜分析其特性。此外，通道式選擇性成長二氧化矽奈米線於電壓-電流曲線與場發射特性較優於大面積成長。
對於矽單晶奈米線束的製備則是使用無電鍍金屬沉積法，將其改良製程後並運用在太陽能電池的抗反射層、場發射及光致發光等實際應用上。
矽單晶奈米線束在抗反射層方面的應用，於不同長度的奈米線束樣品量測其效果。發現奈米線束長度越長，在可見光的範圍中的抗反射效率最佳可達5%以下，而矽奈米線束經過CF4及H2電漿後處理抗反射特性均會變差。
以無電鍍金屬沉積法所製備之矽奈米線束其光致發光特性較不如化學氣相沉積法來的好，主要原因乃是奈米線形貌容易群聚導致發光強度低。實驗中發現隨著奈米線束長度越長發光強度會逐漸提升；經過CF4電漿後處理於400sec時發光強度最為明顯，而H2電漿後處理則無太大的改變。
在場發射特性的量測中，我們發現奈米線束越長場發射的特性越好，雖然與奈米碳管相比仍是偏高，推測可能是因為奈米線束相互緊鄰，產生屏蔽效應(Screen effect)，經由CF4電漿後處理400sec時可得到場發射最佳起始電場為14.2V/μm和β值645。

In this research, the silica nanowires (SiOx NWs) were synthesized on silicon substrate via a thin gold catalytic reaction by the thermal chemical vapor deposition system. The XeF excimer laser with different energy was adapted as the pretreatment and post-treatment technique for silica nanowires. The FE-SEM and FTIR and XPS were used for silica nanowires characteristic. Furthermore, It was observed that the I-V characteristic of patterned silica nanowires was improved.
To investigate the potential application for the bundles of silicon nanowires in solar cell anti-reflection, the anti-reflection properties for the bundles of silicon nanowires were studied with different length. The reflectance is lowest (<5%) in the visible region as the nanowires length increased. Regardless, the reflectance was increased after the CF4 and H2 plasma post-treatment.
The photoluminescence characteristic for the bundles of silicon nanowires by EMD process is inferior to those by the chemical vapor disposition (CVD) technique. The photoluminescence intensity for the bundles of silicon nanowires is low. The photoluminescence intensity was enhanced as the nanowires length increased. It was found that the photoluminescence intensity is strongest after the CF4 plasma post-treatment for 400 sec. However, there was no obvious variation for the H2 plasma post-treatment.
It was observed that turn-on field was approximately 14.6 V/μm for the bundles of silicon nanowires in the field emission measurement. The high turn-on field could be a result of screen effect due to the high density of nanowires getting to close to each other. After CF4 plasma post-treatment, it was found that the lowest turn-on field and highest β factor were 14.2 V/μm、645, respectively.

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