三維先進封裝可以透過層層堆疊擴展每個3D芯片的功能，遠遠超出傳統縮放的能力，然而進一步的尺寸小型化為半導體行業帶來了巨大的挑戰，其中在晶圓鍵合過程中對準量測技術為關鍵的製程步驟，在鍵合前能夠準確將晶圓精確對準能夠有效減少製程成本。在本篇論文中，利用紅外光能穿透矽晶圓的特性，提出適用於晶圓鍵合的紅外光學對位模組，並且製作出一種基於莫爾條紋的中心對稱光柵對準符號，能夠對兩片晶圓進行粗對準及細對準，進而量測出兩晶圓間的線性位移以及旋轉角位移，未來可回授偏移量於晶圓壓電載台進行晶圓鍵合前的校正補償。本文設計並實現可應用於晶圓鍵合的紅外光學對位模組之光路架構，並利用基於莫爾條紋的中心對稱光柵對準符號建構對位量測模組，為了達到對準的準確與即時性，使用一維線性擬合以及傅立葉轉換提取特定頻率方式濾波，分別對線性位移及旋轉角位移進行位移量預測，另外開發基於SURF特徵提取演算方法完成對準符號影像拼接，解決紅外光相機視野範圍不足的問題。實驗結果顯示此光學架構可偵測0.1°的最小精度角位移，量測誤差控制在±0.03°之內，角位移量計算時間約為0.2秒，以及可偵測0.5μm的最小精度線性位移，且量測誤差控制在±0.03μm之內，線性位移量計算時間約為0.04秒。

Three-dimensional advanced packaging can expand the capabilities of each 3D chip through layer-by-layer stacking, however further size miniaturization has created enormous challenges for the semiconductor industry. Alignment is a key process step during wafer bonding technology, and accurate alignment of wafers before bonding can effectively reduce process costs. In this paper, the author proposed an infrared optical alignment module suitable for wafer bonding by utilizing the characteristic that infrared light can penetrate silicon wafers. Besides created a centrosymmetric grating alignment mark based on Moiré fringes, which can perform coarse alignment and fine alignment. This designed optical alignment module can detect the linear and angular displacement between two wafers. The author designs the setup of optical alignment used in wafer bonding system, and uses the center-symmetric grating based on Moiré fringes as the alignment mask of alignment module to predict overlay. In order to achieve the accuracy and immediacy of alignment, designing a filter which is based on one-dimensional linear fitting and Fourier transform. Besides develop image stitching algorithm based on SURF feature extraction. The experimental results show that this module can detect angular overlay of 0.1°, and the measurement error is controlled within ±0.03°,cost time 0.2 seconds；Linear overlay of 0.5μm, and the measurement error is controlled within ±0.03μm, cost time 0.04 seconds.

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