此篇論文是使用商用氮化鎵磊晶於矽基板，磊晶結構為藍光發光二極體之晶圓製作積體化發光二極體(LED)和監控光偵測器(MPD)元件，以兩片不同廠商製作的晶圓，相同製程步驟和相似的製程參數製作，並做光電特性量測。再做成模組，透過藍芽連接模組電路和手機app，以遠端監控的方式控制LED操作電壓，讓LED光功率在使用者設定之目標光功率上保持定值，過程中同時儲存每次實驗操作上重要的數據，不只可以直接在手機上作圖給使用者觀看，也可以上傳數據至雲端並做資料分析。由於氮化鎵與矽晶有晶格常數和熱膨脹係數不匹配的問題，接著測試LED的可靠度，在室溫下進行共兩部分實驗測試，第一片晶圓元件總共操作時間900分鐘，分別為恆定光功率0.8mW下，共測試300分鐘，以及光功率恆定在1.0mW下，共測試600分鐘。第二片晶圓元件總共操作時間1300分鐘，分別為恆定光功率3mW下，共測試300分鐘，以及光功率恆定在5mW下，共測試1000分鐘。觀察兩片不同廠商的晶圓所製作的元件在操作期間中的表現差異和是否有衰退狀況出現，還有可靠度測試實驗前後元件光電特性的變化，包括I-V、L-I特性曲線、光譜和監控響應率等。
在光電特性量測上，可靠度測試實驗前， 第一片晶圓LED的啟動電壓約為2.9 V，在電流 50 mA下的光功率約為1.1 mW，串聯電阻約20~35 Ω，峰值波長約為476 nm，半高寬約為21.5 nm。MPD無偏壓下的暗電流約為1.64×10-10 A，在LED電流 50 mA下的照光電流約為5.44×10-5 A，響應率約為4.6× 10-2 A/W。第二片晶圓LED的啟動電壓約為2.7 V，在電流 50 mA下的光功率約為5.5 mW，串聯電阻約7~14 Ω，峰值波長約為449 nm，半高寬約為19.6 nm。MPD無偏壓下的暗電流約為2×10-11 A，在LED電流 50 mA下的照光電流約為5×10-4 A，響應率約為9 × 10-2 A/W。相比較陳敬樺學長所製作的氮化鎵磊晶於藍寶石基板上所做出MPD的響應率約在2 × 10-2 A/W，此篇元件的響應率較高，歸因於氮化鎵磊晶於矽基板時的緩衝層結構有較高的反射率。
初步可靠度測試過程中，兩片晶圓元件都沒有明顯衰退的現象出現。可靠度實驗後兩片晶圓的LED基本光電特性與之前大部分都相似，且光功率兩片都上升了約20%，表示此初步可靠度測試相當於是LED的燒入測試，元件特性變得更好。而MPD操作在無偏壓下，第一、二片晶圓的響應率分別有15%與10%的略微降低，可能是MPD在可靠度測試前尚未達穩定，其變化幅度尚可接受。

This study used commercial wafers of GaN epitaxy grown on silicon substrate (GaN-on-Si) to fabricate integrated light-emitting diodes (LEDs) and monitor photodetectors (MPD) devices. The epitaxy structure was for blue light-emitting diodes. Two wafers grown by different manufacturers were processed with the same processing steps and similar processing parameters, and the photoelectric characteristics were measured. To make a module with these devices, I connected the module circuit which communicated the mobile app through Bluetooth, and controlled the LED operating voltage by remotely monitoring MPD photocurrent, so that the LED optical power can maintain a constant target optical power set by the user. The retrieved data in the experiment can be directly plotted on the mobile phone for users to view, and uploaded to the cloud for data analysis. Due to the mismatch of lattice constant and thermal expansion coefficient between gallium nitride and silicon crystals, the reliability of the GaN-on-Si LED was evaluated. Two parts of the experiment were carried out at room temperature. The total operating time of each of the first wafer devices was 900 minutesincluding at a constant optical power of 0.8 mW for a total of 300 minutes, and at a constant optical power of 1.0 mW for a total of 600 minutes. The total operation time of each of the second wafer devices was 1300 minutes including at a constant optical power of 3 mW for a total of 300 minutes, and at a constant optical power of 5 mW for a total of 1000 minutes. Whether there is any degradation during the operation period of the devices made of two wafers from different manufacturers were monitored, as well as the changes in the optoelectronic characteristics of the devices before and after the reliability experiment, including I-V, L-I curves, spectra and monitoring responsivity etc.
In terms of photoelectric characteristics, before the reliability experiment, the turn-on voltage of the LED of the first wafer was about 2.9 V, the optical power at a current of 50 mA was about 1.1 mW, the series resistance was about 20~35 Ω, the peak wavelength was about 476 nm, and the full width at half maximum (FWHM) was about 21.5 nm. The dark current of MPD under zero bias voltage was about 1.64×10-10 A, the illuminated current under LED illumination at 50 mA was about 5.44×10-5 A, and the responsivity was about 4.6×10-2 A/W. The turn-on voltage of the LED of the second wafer was about 2.7 V, the optical power was about 5.5 mW at a current of 50 mA, the series resistance was about 7-14 Ω, the peak wavelength was about 449 nm, and the FWHM was about 19.6 nm. The dark current of MPD under zero bias voltage was about 2×10-11 A, the illuminated current under LED illumination at 50 mA was about 5×10-4 A, and the responsivity was about 9×10-2 A/W. Compared with the responsivity of the MPD made by Chen Jinghua using GaN-on-sapphire wafer of about 2 × 10-2 A/W , the responsivity of the MPD in this article was higher. It was attributed to that the buffer layer structure of GaN-on-Si wafer has a higher reflectivity.
During the preliminary reliability experiment, there was no obvious degradation of the devices of both wafers. After the reliability experiment, the basic photoelectric characteristics of the LEDs of the two wafers were similar to the previous ones except the optical power of all LEDs of both wafers had increased by about 20%, indicating that this reliability experiment was equivalent to the burn-in test of LED which usually makes the component characteristics become better. However, the responsivities of the MPDs under zero bias voltage of the first and second wafers were slightly reduced by 15% and 10%, respectively. It may be resulted from that the MPDs were not stabilized before the reliability experiment, and the change ratios were acceptable.

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