本研究成功地以真空濺鍍法及硒化退火製備硒化銅鋅錫(CZTSe)吸收層薄膜，並以三種不同的n型薄膜層製備出CZTSe薄膜太陽能電池。首先以銅-鋅-錫金屬靶材進行真空濺鍍CZT薄膜於鍍鉬的鈉玻璃基板上，接著進行不同條件之硒化退火獲得p型的CZTSe吸收層薄膜。再以三種不同n型半導體層來製作薄膜太陽能電池元件，三種n層堆疊，分別為n-ZnO/CdS/p-CZTSe、n-In0.15Ga0.85N/n-GaN/p-CZTSe與 n-In0.15Ga0.85N/n-In0.3Ga0.7N/p-CZTSe，後兩種元件為無鎘的薄膜太陽能電池元件，係使用III族氮化物薄膜取代ZnO/CdS。
研究中利用X光繞射分析儀(XRD)、場發射掃描式電子顯微鏡(FE-SEM)、能量散射光譜儀(EDS)與霍爾量測等儀器來分析薄膜特性，並以擬太陽能光測試儀器測試各CZTSe薄膜太陽能電池元件之光電轉換效率。由XRD及EDS分析確認由(Cu0.7Zn0.5Sn0.45)靶材再經600 oC硒化所得CZTSe吸收層為單相結構，且為缺銅富鋅組成，由FE-SEM確認CZTSe形態平整。
n-In0.15Ga0.85N/n-In0.3Ga0.7N/p-CZTSe/TiN/Mo/Glass無鎘薄膜太陽能電池元件的效率由傳統製程之1.1%提升至4.2%，其最佳電流密度約為48 mA/cm2，開路電壓約0.34 V，FF為27.1 %。

Cu2ZnSnSe4 (CZTSe) films for thin-film solar cell devices were fabricated by sputtering with a Cu-Zn-Sn metal target and followed by two-steps post-selenization at 500–600 °C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for the CdS-free CZTSe thin film solar cell devices: In0.15Ga0.85N/GaN/CZTSe and In0.15Ga0.85N/In0.3Ga0.7N/CZTSe. Three kinds of CZTSe films were prepared by using three kinds of Cu-Zn-Sn targets with different Zn contents. The structure, morphology, composition, electrical properties of p-type CZTSe films were characterized with X-ray diffractometry, field-emission scanning electron microscopy, energy dispersion diffractometry, and Hall effect measurement. CZTSe films obtained from sputtering the (Cu0.7Zn0.5Sn0.45) target followed with the 600 oC selenization showed the Cu-deficient and Zn-rich composition and smooth surface morphology.
With the CdS-free a new solar cell design, the solar cell device with the structure of In0.15Ga0.85N/In0.3Ga0.7N/CZTSe had improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. This Cd-free cell device had current density of ~48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1%. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves the sputtered III-nitride films have their merits.

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