本論文中分為兩個部份，第一個部份我們利用本實驗室自行架設的中空陰極化學氣相沉積(Hollow Cathode Chemical Vapor Deposition)系統，在低溫下沉積薄膜，找出最佳製程參數，並分析薄膜特性。
第二部份我們探討快速熱退火(Rapid Thermal Annealing；RTA)對不同厚度的閘極氧化層以及多重通道(multi-channel)結構處理後特性改善的研究。實驗結果顯示對於經過RTA處理後且閘極氧化層厚度越薄的薄膜電晶體，其電性改善的幅度越多。這是因為快速熱退火的高溫可以增加薄膜的品質，減少薄膜內的缺陷進而改善元件特性。
此外，我們也進行有關多重通道複晶矽薄膜電晶體的研究。藉由增加多通道的數目，可以改善元件的電特性，像是降低臨界電壓（threshold voltage）及次臨界擺幅（subthreshold voltage），甚至可以抑制當閘極通道長度（gate length）越短時所產生的短通道效應（short channel effect）。

This thesis is divided into two parts. The first part, we can use Hollow Cathode Chemical Vapor Deposition System which is established by our laboratory to deposit oxide under low temperature. We have found out the best parameter and analyzed the electrical characteristics of the oxide.
In the second part, we investigate the performance improvement of the different gate oxide thickness and multi-channel poly-si TFT with rapid thermal annealing. The results of the experiment indicate that the thinner gate oxide thickness with RTA, the more improvement of electrical characteristics. This is because the high temperature of RTA can increase the quality of the oxide, reduce the defects of the oxide, and then improve the electrical characteristics.
In addition, we research the electrical characteristics of multi-channel poly-si TFT. The electrical characteristics of the devices, such as threshold voltage and subthreshold swing, are improved with increasing the channel stripes. It also suppresses the short channel effect when the channel stripes increase.

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