本研究是利用水熱法以醋酸鋅、六甲基四胺以及聚乙烯亞胺作為反應物，在90oC下，成長高順向性氧化鋅奈米柱於氧化銦錫透明導電玻璃基板上，並且探討聚乙烯亞胺對氧化鋅奈米柱徑像和軸向成長的影響。在量子點披覆於氧化鋅奈米柱表面的實驗方面，則選用3-MPA與11-MUA這兩種具有雙官能基的分子先改質氧化鋅表面，再將硒化鎘量子點接於氧化鋅表面。在被覆狀態的研究上，以穿透式電子顯微鏡進行觀察，並藉由測量載子生命週期來探討量子點照光後載子注入至氧化鋅的情形，並配合循環伏安法分析連接分子的最高填滿軌域，推測載子在氧化鋅與量子點界面間的傳遞行為。
另外，有關水熱法成長的氧化鋅奈米柱的載子濃度，則使用阻抗分析進行測量。這些研究結果對於日後研發量子點敏化太陽能電池以及改質配位基的選擇有著很高的應用價值。

In this study, hydrothermal method was employed to grow well-aligned zinc oxide (ZnO) nanorods on ITO/glass substrate using zinc acetate dihydrate, hexamethylenetetramine (HMTA) and polyethyleneimine (PEI) as reactants. The growth rate in length and diameter of ZnO nanorods were studied by Field-emission scanning electron microscope (FE-SEM) when polyethyleneimine was added. In order to anchor quantum dots on the surface of ZnO nanorods, bifunctional group molecules of 3-mercaptopropionic acid and 11-mercaptoundecanoic acid with carboxyl and thiol functional groups were used to modify the surface of ZnO nanorods. The coverage of CdSe quantum dots (QDs) on ZnO nanorods was characterized by transmission Electron Microscope. In order to understand the detail of carrier transfer between CdSe QDs and ZnO nanorods, carrier lifetime measurement was used. Cyclic voltammetry analysis could help to measure the energy level of linker molecule and CdSe QDs to deduce carrier transfer between CdSe quantum dots and ZnO nanorods. We also try to measure carrier concentration of ZnO nanorods grown by hydrothermal method by impedance analysis.

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