本論文主要探討光通訊發射與接收端的設計與實現，其中包含發光與檢光晶片、以及LED驅動電路。
第一部份利用CMOS製程設計檢光與發光晶片，使用製程為台積電(TSMC) 0.18μm CMOS 1P6M，晶片設計重點為以CMOS製程中PMOS做為檢光與發光二極體，利用結構內的PN接面達到檢光發光效果，並與內建元件之二極體比較特性。量測結果顯示該自製所有佈局之二極體模組比內建二極體模組擁有更好的檢光與發光特性，主因為自製所有佈局增加p-n接面的面積，檢光響應度在650nm時，內建二極體為0.162A/W，自製所有佈局二極體為0.799A/W；自製所有佈局之二極體的矽發光功率約為內建二極體的4倍。
第二部份利用BiCMOS製程實現檢光與發光晶片，使用製程為台積電(TSMC) 0.35μm SiGe BiCMOS，我們探討了光電晶體的電流增益特性，以及佈局增加光偵測晶片的使用效率，且以用同樣的元件當作發光元件使用。量測結果顯示該光檢測晶片可以操作在低於1V的供應電壓，響應度在650nm時為1.333A/W，850nm時為0.639A/W；同一晶片之發光特性與CMOS內建之矽發光特性相接近。
第三部份為可調LED驅動電路之設計與實現，使用製程為台積電(TSMC) 0.18μm CMOS 1P6M，可應用於順偏或逆偏操作之LED或雷射，將輸入電壓轉換成輸出電流，並可以調變輸出電流之直流準位以及交流振幅。

This thesis presents the design and realization of optical emitting and optical receiving in integrated Circuits for optical communication system, including light-emitting chip, photo detector chip and driver circuit for light emitting diode.

In the first part, we use the TSMC 0.18μm CMOS 1P6M process to realize the light-emitting and photo detector circuits. We use the PMOS structure in the CMOS process to design the photodiode and silicon light emitting device. The built-in P-N junctions and our diode structure are used to design the photodiode and silicon light emitting device. Measurement results show that our diode structure is better than the built-in diode, because our diode structure has larger P-N junction areas, while responsivities are 0.162A/W for the built-in diode and 0.799A/W for our diode structure at 650nm. As for the light-emitting characteristics employing the same chip, the emitted light power of our diode structure is four times that of the built-in diode.

Secondly, we use the TSMC 0.35μm SiGe BiCMOS process to realize the light-emitting and photo detector circuits. Then, we discuss the current gain property, the layout of phototransistor, and the light-emitting characteristics using the same chips. Our results show that the phototransistor can be operated at a power-supply voltage lower than 1V, while its responsivities are 1.333A/W at 650nm±14nm and 0.639A/W at 850nm±14nm for the photodetector. The light-emitting characteristics are close to that of the silicon built-in diode.
Thirdly, the driver circuit for tunable light emitting devices is realized using the TSMC 0.18μm CMOS 1P6M process. It can be used for silicon-based light emitting devices, light emitting diode, or lasers not only in a forward bias, but also in a reverse bias. It can convert the input voltage to the output current. Furthermore, the dc and ac components of the output crrent can be adjusted.

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