近幾年以來，由於通訊產品和平面顯示器的推陳出新，使得功率元件的需求量大幅增加。為了順應電路積體化的潮流，將功率元件與低壓電路整合在同一晶片上，傳統垂直式的絕緣閘極雙極性電晶體元件結構必須改成橫向式的設計，而在這之中，一般可用的元件為薄膜絕緣閘極雙極性電晶體元件，其係於絕緣矽基板上實現。本論文完成垂直溝渠式的絕緣閘雙極性電晶體在於傳統式以及自我對準式的製程比較；且對於橫向式的絕緣閘極雙極性電晶體而言，為了改善閂鎖效應，提出不同的通道雜質分佈。
在本論文中，將經由模擬來探討絕緣閘極雙極性電晶體，針對垂直溝渠式的絕緣閘極雙極性電晶體，利用自我對準式以簡化製程步驟，不僅減少光罩使用量，並且減省成本。在電性上，例如：崩潰電壓、漏電流、和關閉時間，沒有改變。另外，由於自我對準式的 n+ source 寬度較傳統式的短，以致於導通電流略小，也因為如此，自我對準式在閂鎖免疫力比傳統式較佳。
為了與積體電路做整合和改善閂鎖免疫力，提出橫向式的絕緣閘極雙極性電晶體，分別在矽基板以及絕緣矽基板上實現。結果可發現，當 p-well 使用退位井結構時，可改善崩潰電壓、漏電流、導通電流，閂鎖免疫力等電性，該退位井是利用高能量的方式植入離子於晶片中，經由數小時的退火，而形成表面濃度低且基底中濃度高之雜質分佈。

In recent years, following the introducing of state of the art flat panel displays and communication products, demands for power devices have risen substantially. In keeping with the trend of integration circuit, conventional vertical device needs to be changed to lateral structure to make it possible for the integration of power devices and low voltage circuit on the same chip. The available used lateral power device is Thin film Lateral Insulated Gate Bipolar Transistor (TLIGBT) device, which is used to Silicon On Insulator (SOI) platform. Formation of vertical trench-type insulated gate bipolar transistors (IGBT’s) by using a self-aligned silicided scheme as compared with conventional non-self-aligned type, which is the different process in this dissertation. In order to improve the latch-up immunity, a lateral IGBT has been proposed which has two types. The same type which is also applies on thin film structure.
In this thesis, IGBTs were studied by using Tsuprem-4 and MEDICI simulation. Formation of vertical trench-type insulated gate bipolar transistors (IGBT’s) by using a self-aligned silicided scheme has been proposed to simplify the fabrication process, Not only reducing the mask steps, but also economizing the cost. For both the conventional process and the self-aligned scheme, no considerable difference is found with respect to the forward blocking voltage, the off-state leakage current, the latch-up triggering current density, and the turn-off time. By this self-aligned scheme, owing to a smaller n+ source, better latch-up immunity is obtained while very little degradation of on-state voltage drop is caused.
In keeping with the trend of integration circuit and latch-up immunity, lateral IGBT has been commonly used. By using the retrograde scheme, a relatively lower surface dopant concentration and a relatively higher bulk dopant concentration are simultaneously caused, which significantly improve the latch-up immunity.

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