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研究生： 陳佳斌
Chia-bin Chen
論文名稱： 線上光學檢測技術於準分子雷射退火矽膜之再結晶特性研究
Investigation of Si thin films Recrystallization Mechanism during Excimer Laser Annealing Using In-situ Time-Resolved Optical Reflection and Transmission Measurement
指導教授： 鄭正元
Jeng-Ywan Jeng
口試委員: 葉文昌
Wen-chang Yeh
吳忠幟
Chung-Chih Wu
學位類別： 碩士
Master
系所名稱： 工程學院 - 機械工程系
Department of Mechanical Engineering
論文出版年： 2005
畢業學年度： 93
語文別： 中文
論文頁數： 142
中文關鍵詞： 準分子雷射 、退火 、線上光學檢測
外文關鍵詞： TROR, TROT, In-situ Time-Resolved Optical Measurement, excimer laser
相關次數： 點閱：472  下載：4 
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    • 本研究建構一套準分子雷射退火矽膜再結晶特性之線上光學檢
    測系統，可以線上即時檢測出非晶矽薄膜於準分子雷射退火期間反射率與穿透率之變異性，進而分析相關物理現象並提出矽膜之相變化機制。藉由線上光學檢測系統檢測發現，使用PECVD所沉積90 nm厚的非晶矽薄膜於退火過程中，其液相存在時間隨著退火能量提高，從矽膜表面部份融化的15 ns延長至矽膜完全融化的130 ns，而在矽膜於近乎完全融化之能量170 mJ/cm2，液相存在時間為110 ns左右，其具有超級側向成長之區域，且可發現長達1 μm之大粒徑多晶矽。此外，影響非晶矽薄膜產生爆炸結晶的因素，有非晶矽薄膜厚度、準分子雷射脈衝持續時間、退火雷射波長，當膜厚＞50 nm、準分子雷射脈衝持續時間＞25 ns、準分子雷射波長＞248 nm，非晶矽薄膜於融化後，能夠產生爆炸結晶現象；對於線上光學檢測系統，非晶矽膜之表面粗糙度RMS＜1 nm、檢測光源波長＞633 nm與檢測光源功率＞5mW，能夠容易檢測出爆炸結晶現象。線上光學檢測系統能夠理解準分子雷射矽膜之再結晶機制，因此可以容易製作大粒徑之多晶矽以及提高低溫多晶矽之製程良率。

    An in-situ real-time time-resolved optical reflectivity and transmissivity (TRORT) monitoring system combining a CW He-Ne laser, a fast digital oscilloscope and two photodiodes is developed for monitoring the melt-phase duration and examine the melting and crystallization behavior during XeF excimer laser annealing(ELA) in this study. The recrystallization models are proposed to interpret the formation of grain microstructure.
    The melt-phase duration of PECVD-grown 90nm-thick a-Si films during ELA is increased from partial melting with 15 ns to complete melting with 130 ns. The grain size of 1μm in diameter is found in the super lateral growth SLG regime with melt-phase duration with 110 ns .Thickness of a-Si greater than 50 nm, pulse duration of excimer laser
    greater than 25 ns and wavelength of excimer laser greater than 248 nm are important for triggering the EC during ELA. Surface roughness of the sample smaller than 1 nm of root mean square (RMS), wavelength of probe laser greater than 633 nm and output power of probe laser greater
    than 5 mW are easier to observe the EC phenomenon using TRORT measurements during ELA. This technique provides a simple approach for fabrication large-grained poly-Si during ELA and enhances the high yield during in-line large area flat panel displays fabrication using poly-Si
    TFTs.

    中文摘要......................................................................I 英文摘要.....................................................................II 誌謝........................................................................III 目錄.........................................................................IV 圖索引.......................................................................VI 表索引........................................................................X 第一章 緒論...................................................................1 1.1 前言......................................................................1 1.2 研究背景與目的............................................................1 第二章 文獻探討...............................................................5 2.1 Excimer Laser Crystallization（ELC）......................................5 2.1.1 爆炸結晶（Explosive Crystallization，EC）...............................9 2.1.2 表面粗糙度.............................................................12 2.2 線上光學檢測技術.........................................................13 2.2.1 Time-Resolved Optical Transmission（TROT）， Time-Resolved Optical Reflection（TROR）...............................13 2.2.2 Backside TROR .........................................................15 2.2.3 TROT/TROR相關應用......................................................17 2.2.4 不同波長之檢測光源.....................................................24 2.3 TRTE（Time Resolution Thermal Emission）.................................25 2.4 TREC（Time-Resolved Electrical Conductance）.............................27 2.5 薄膜沉積技術與提高性能之處理.............................................28 2.6 試片分析.................................................................32 2.6.1 原子力顯微鏡分析.......................................................33 2.6.2 拉曼光譜分析...........................................................35 2.6.3 掃描式電子顯微鏡分析...................................................38 第三章 準分子雷射退火自動操控系統............................................41 3.1 準分子雷射退火設備.......................................................41 3.2 準分子雷射輸出人機介面...................................................44 3.3 準分子雷射退火加工之人機介面.............................................45 第四章 準分子雷射退火之線上光學檢測系統建構..................................49 4.1 數位示波器（digital oscilloscope）.......................................49 4.2 檢測光源（probe laser）..................................................53 4.3 光感測器（Photodetector）................................................54 4.4 相關光學配件.............................................................56 4.4.1 聚焦鏡（Focal lens）...................................................57 4.4.2 分光鏡（Beam splitter）................................................57 4.4.3 濾光片（Filter）.......................................................58 4.5 線上光學檢測系統.........................................................59 第五章實驗流程與結果.........................................................76 5.1 退火試片準備.............................................................76 5.1.1 玻璃基板清洗...........................................................76 5.1.2 PECVD for a-Si.........................................................77 5.1.3 PECVD for SiO2.........................................................79 5.1.4 Sputtering for a-Si....................................................80 5.1.5 氫化...................................................................82 5.2 波形訊號與物理現象探討...................................................83 5.3 爆炸結晶驗證............................................................106 5.3.1 雷射脈衝時間（Pulse duration）........................................107 5.3.2 微結晶相叢集（Microcrystalline cluster）..............................108 5.3.3 矽膜膜厚..............................................................111 5.3.4 氫離子................................................................112 5.3.5 檢測光源..............................................................114 5.3.6 沉積後表面粗糙度......................................................116 5.3.7 實驗結果..............................................................118 第六章 結論與未來研究方向...................................................121 6.1 結論....................................................................121 6.2 未來研究方向............................................................123 參考文獻....................................................................125

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