本論文分為二部分，第一部分探討不同成長時間的摻氮的超奈米鑽石(N-UNCD)和氧化鋅及氧化銦鎵鋅複合奈米柱/管之氫氣感測器，並進行物性及電性之分析；第二部分探討不同成長時間的摻氬的超奈米鑽石(Ar-UNCD)和氧化鋅及氧化銦鎵鋅複合奈米柱/管之氫氣感測器，並進行物性及電性之分析。
研究發現，在N-UNCD (5 min)/Ar-UNCD(5 min)，其在500ppm的氫氣流量下擁有最好的靈敏度為2.5%和3.6%；接著鍍上氧化鋅經由水熱法成長氧化鋅奈米柱的時候，造成響應值提升，其原因是整體的比表面積提升，導致更多的氧氣吸附；第二個原因是氧化鋅與N-UNCD/Ar-UNCD分別兩種材料接觸時，因為功函數的不同，導致氧化鋅的電子會從導帶轉移到N-UNCD/Ar-UNCD的導帶直到費米能階達導同個水平，在氧化鋅和N-UNCD/Ar-UNCD接面形成空乏層，使電阻增加，當在氫氣的環境下，自由電子濃度注入，空乏層寬度降低，使電阻下降，導致氫氣響應值的提升。N-UNCD/Ar-UNCD複合氧化鋅奈米柱在500ppm的氫氣流量下之靈敏度提升為24.08/26.76%。
經由加入氧化銦鎵鋅可以提高較高的電子流動性以及表面積，並且從柱狀結構經由自我蝕刻形成管，把接觸面積提升更多，以更提升氫氣感測響應值，氧化鋅與氧化銦鎵鋅-N-UNCD/Ar-UNCD奈米結構在500ppm的氫氣流量下之靈敏度提升為58.18%/74.7%。
最後在以不同波段的發光二極體(LED)去照射氧化鋅與氧化銦鎵鋅-Ar-UNCD複合結構進行氫氣感測之分析可以發現，因氧化鋅與氧化銦鎵鋅/Ar-UNCD奈米結構在紫外光波段具有吸收波長，當照射紫外光時進行氫氣感測可以發現因電子能階的跳耀，造成電阻上升，在500ppm的氫氣流量下靈敏度提升為82.5%。
另外發現把材料應用在光感測上面也有非常好的響應值，氧化鋅本身對於紫外光有反應，氧化銦鎵鋅本身具有較高的電子遷移率，超奈米鑽石對紫外光有響應，綜合起來，氧化鋅與氧化銦鎵鋅-N-UNCD/Ar-UNCD奈米結構製作紫外光感測器，最佳的光暗響應值比為3747.09/19017.63。

Hydrogen (H2) gas have been recognized as future substitute natural resource for fuel requirements and commercial applications. However, it is unsafe hence it must detect with proper H2 gas detector with advance nano materials based device. As well, UV photodetectors are very important device that detect the harmful UV lights and also utilized in health diagnostics, flame discovery and satellite applications. Zinc oxide (ZnO) based gas sensor and UV photodetectors are excellent, and also ZnO possesses advance performance with addition of suitable materials.
In this work, we devote to fabricate several gas sensors and photodetectors with combination of ZnO and nitrogen incorporated ultranano crystalline diamond (N-UNCD) and argon incorporated ultranano crystalline diamond (Ar-UNCD) with addition of indium gallium zinc oxide (IGZO) interlayer. In the first section, we focus the fabrication of H2 gas sensors using ZnO nanorods/tubes (ZNRs/ZNTs) with combination of Ar-UNCD and N-UNCD, which possesses gas response of 24% and 27%, respectively. On the otherhand, the IGZO interlayer with ZNRs/Ar-UNCD and ZNRs/N-UNCD exhibits H2 sensing response of 44% and 64%. Remarkably, the IGZO interlayer with ZNTs/Ar-UNCD and ZNTs/N-UNCD reveals enhanced H2 sensing response of 58% and 75%. Interestingly, IGZO interlayered ZNTs/Ar-UNCD exhibits excellent gas sensing of 82.5% under UV light illuminations. The systematic analysis reveals excellent gas response achieved due to effectual material defects and various heterojunction interfaces.
In the second section, we focus the fabrication of UV photodetector using ZnO with combination of Ar-UNCD and N-UNCD with interlayered IGZO. Initially, we optimize the growth and of ZNR-ZNTs on N-UNCD substrates with interlayered IGZO, which exhibits the photoresponse switch ratio of 1098, 2985 and 3747, respectively. On the other hand, ZNR-Ar-UNCD-IGZO and ZNT-Ar-UNCD-IGZO nanostructures exhibits the superior photoresponse ratio of 9757 and 19017. The enhanced photoresponse achieved due to the effective electron-hole recombination through fast adsorptivity and oxygen vacancies under a UV atmosphere. The obtained gas and UV sensing performance of ZNT-Ar-UNCD-IGZO is overwhelmingly better than that of the ZnO based on previous studies and promising for future Gas/UV applications.

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