研究生: |
戴宏霖 Hung-lin Tai |
---|---|
論文名稱: |
五環素有機場效電晶體載子傳輸機制探討 In-Situ Probing Thickness Dependence of the Electrical Characteristics of Pentacene- Based Field-Effect Transistors |
指導教授: |
李志堅
Chih-chien Lee |
口試委員: |
范慶麟
Ching-lin Fan 劉舜維 Shun-wei Lui |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2010 |
畢業學年度: | 98 |
語文別: | 中文 |
論文頁數: | 70 |
中文關鍵詞: | 有機場效電晶體 |
外文關鍵詞: | Pentacene Field-Effect Transistors |
相關次數: | 點閱:546 下載:4 |
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本研究以真空即時量測探討各單分子層的五環素薄膜電晶體電性,發現在高真空下極薄的一個約1.57 nm單分子層時已有場效遷移率產生。隨著膜厚增加、表面覆蓋性上升,場效遷移率也隨之大幅增進直至3.2個分子層的飽和膜厚。此關鍵性的飽和膜厚之後,卻已無法再提供有效電荷載子給予導電通道。以分子微觀的角度,發現五環素分子成長,呈現初期為薄膜層,之後卻以島塊狀成形的Stranski-Krastanov成長機制。在此發現五環素分子初始幾層的單分子層成長品質和所被蒸鍍的介電層材料密切相關,並會影響表面形貌、分子堆疊及載子場效遷移率。
The pentacene field-effect transistors were studied as a function of molecular monolayer(ML) with in-situ electrical measurement. Field-effect mobility occurs in one thin monolayer(~ 1.57 nm) in high vacuum. Carrier mobility dramatically increases with increasing thickness and surface coverage until saturation thickness (3.2 ML). Beyond the key of saturation thickness, no more effective charge carriers contribute to conducting channel. The atomic force microscopy images of the pentacene layer show the Stranski-Krastanov growth mechanism; molecules change their growth direction from lateral to vertical. The growth quality of first few pentacene is strongly related to insulator material and influences the morphology, molecular packing, and electrical characterization in this research.
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