近年來，能源出現危機，大家紛紛投入太陽能電池的研究與發展。目前化合物太陽能電池以硒化銅銦鎵為主，但由於成本高昂，故無法普及化，因此需要新的材料來控制成本，而發展出硒化銅錫鋅與硫化銅錫鋅兩種化合物太陽能電池，因錫、鋅的含量豐富且其硒化物能隙為0.9~1.07 eV、硫化物為1.5 eV，適合拿來做替換材料。
本實驗利用油墨網印法製備硒化銅錫鋅太陽能電池，並探討三種不同組成A(CZTSe+10wt% Se)、組成B(CZTSe+10wt%S)與組成C((CZTSe+10 wt%Al)+10 wt%S)所配製的油墨在不同液相燒結溫度(550℃、550℃與600℃)及冷壓與否對硒化銅錫鋅吸收層與太陽能元件之特性的影響，研究中透過FE-SEM、XRD及EDS分析吸收層物理性質，將其各參數製備成元件(Ag/ITO(RF)/i-ZnO(RF)/CdS(CBD)/吸收層(screen printing) /Mo(DC)/Al2O3)，利用擬太陽能光測試儀器測試其電池之轉換效率。
實驗結果顯示，油墨網印後且經冷壓之兩階段燒結的方式(第一階段200℃，第二階段500℃~600℃)所製備之吸收層比未經冷壓之吸收層有較佳的緻密性且經由EDS成分分析可以發現沒有因油墨中之有機溶劑所造成的殘碳現象。組成A或組成B吸收層於500℃或600℃液相燒結溫度持溫30分鐘後，與有冷壓的組成C於550℃液相燒結溫度持溫30分鐘後，所得之XRD圖皆有明顯的二次相存在；經過冷壓的組成B於550℃液相燒結所得吸收層比組成A與組成C於550℃液相燒結所得吸收層緻密。且此所得有冷壓之組成B(CZTSe+10wt%S)吸收層，經XRD與EDS分析可證實S元素成功摻雜入晶格結構中，再由SEM分析圖中亦發現緻密性較佳及晶粒較大之現象。將不同的組成參數製備元件進行光電轉換效率量測，雖組成A與組成B為吸收層的太陽能電池皆呈現二極體現象，但效轉換效率不佳。綜合以上結果顯示出組成B經550℃液相燒結可獲得本實驗最佳之吸收層。未來希望能夠增加吸收層的緻密度、減少吸收層膜的厚度與改善p-n接合界面來使光電轉換效率提高。

Due to energy crisis, the research of solar cells is recently much more attractive. The main compound solar cell is the Cu(In,Ga)Se2 system, but the high cost has limited its further applications. Lowing the cost with the finding of new materials is necessary, therefore Cu2ZnSnS4(CZTS) and Cu2ZnSnSe4 (CZTSe) solar cells with energy band gaps of 1.5 eV and 0.9-1.07eV, respectively, are developed.
In this study, CZTSe solar cells were prepared by using ink-printing on alumina substrates. Three kinds of absorber layers with the composition A (CZTSe+10wt% Se),B (CZTSe+10wt%S) and C ((CZTSe+10wt%Al)+10wt%S) were prepared by ink printing. The lique-phase sintering temperatures was conducted at 500 oC,550 oC and 600oC. Some of the specimens were underwent the constrained sintering. The CZTSe solar cell was constituted with the stacking form of Ag/ITO/ZnO/CdS/screen-printing CZTSe/Mo/Al2O3. The quality of the absorption layer was analyzed by XRD and FE-SEM microscope equipped with energy dispersive X-ray spectrometer. The performance of the solar cells was evaluated under the standard AM1.5 illumination.
The experimental results showed that the best condition for the ink-printing CZTSe absorber layers through cold pressure and two-step process sintering pressure are more dense than those without pressuring. Composition-A and composition-B absorbing layers sintered at 500oC or 600oC and Composition-C layer sintered at 550oC contained second phased after they were identified by XRD analyses. After liquid-phase sintering at 550oC, the pre-pressing Composion-B layers had shown the CZTSe single phase and were dense in microstructure. The absorbing layer with composition B (CTTSe+10wt%S) was also found that the sulfur content in the sintering aid was incorporated into the CTZSe lattice, after it was confirmed by the XRD diffraction analysis and EDS spectrum. The suflur incorporation has assisted in densification and grain growth. The solar cell devices made from the 550C-sintered absorbing layers with composition A and composition B did show the I-V characteristics of a diode, although their electro-optic efficiency was not obtained.

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