本研究以有機金屬化合物CuII(OCHMeCH2NEt2)2為先驅物的化學氣相沈積系統探討金屬銅薄膜的材料分析。藉由調整沈積溫度及沈積時間，探討成長出高純度且具有良好之平坦度、緻密性、連續性及低電阻值的銅薄膜之條件；同時探討沈積溫度及銅先驅物分壓對反應速率的影響，經由數據分析，來建立動力模型。
藉由調整沈積溫度及沈積時間，可以成長出高純度且具有相當良好之平坦度、緻密性、連續性及低電阻係數的銅薄膜；由研究結果發現在沈積溫度210℃，沈積時間為6分鐘時，所成長之銅薄膜具有最佳的表面型態及最低的電阻值(2.33 micro-ohm-cm)。
結果顯示沈積溫度介於190∼270℃時銅膜沈積速率存在於表面控制反應區(Surface reaction limited regime)之內，活化能約22.95KJ/mol。經由動力數據的回歸分析，化學氣相沈積銅膜的Langmuir-Hinshelwood動力模式為：
-ra = (ksKaPa)/(1+KaPa)
利用最佳沈積條件在具有溝槽的TaNx/Si基材上成長銅薄膜，可發現銅薄膜在溝槽中的側壁及底部之階梯覆蓋情形相當良好且均勻，由以上研究結果顯示此CuII(OCHMeCH2NEt2)2先驅物可作為成長電鍍銅晶種層的先驅物。

The volatile copper(II) complex CuII(OCHMeCH2NEt2)2 was synthesized. By the use of this CuII(OCHMeCH2NEt2)2 as a MOCVD precursor, highly conductive, conformal, continuous, nonporous, and pure copper thin films were deposited with various deposition temperatures and deposition times. In addition, the kinetic data of MOCVD Cu thin films as a function of deposition temperature and precursor partial pressure were investigated in this study. According to experimental results, a copper thin film obtained at 210℃ and a deposition time of 6 minutes had the lowest resistivity of 2.33 micro-ohm-cm.
It was found that the growth rate of copper between 190~270℃was within
surface reaction limited regime with the value of activation energy as 22.95KJ/mol. Through the analysis on the growth kinetics, the kinetic model of chemical vapor deposition can be expressed as follows:
-ra = (ksKaPa)/(1+KaPa)
A copper thin film was deposited on patterned TaNx/Si substrate at the optimal condition. The step coverage of the copper thin film on sidewall and bottom of the trench was conformal and continuous. According to these results, CuII(OCHMeCH2NEt2)2 was shown as an excellent precursor for the deposition of Cu seed layer.

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