本論文為次微米低溫多晶矽P型薄膜電晶體以氟佈植處理之特性改善研究。即利用犧牲氧化層阻擋氟佈植處理對通道的傷害，並當源極和汲極形成的同時，氟離子將堆積在通道的表面，以形成Si-F強鍵結，能夠抑制在次微米電晶體結構下的熱載子於汲極端的堆積及短通道效應；使得薄膜電晶體的電特性和穩定度皆有效地改善，尤其是載子移動率和電流比。

另外，我們發現一個論點，通道中的缺陷及通道的電阻值是影響元件導通電流的兩個因素。沒有氟佈植處理的通道，在不同通道厚度情況下的導通電流主要是被通道內的缺陷所影響；然而通道經過氟佈植處理後，因為通道內的大量缺陷已經被鈍化，此時導通電流則被通道層的電阻值所影響。

In this thesis, the performance improvement of the sub-micron LTPS p-type TFTs with the fluorine implantation treatment was investigated. The method of this thesis was that using the pad oxide prevents the damage of the channel surface while the channel was treated with the fluorine implantation. When the source and drain were activated, the fluorine ions will diffuse and accumulate at the channel interface. Then, due to the formation of the strong Si-F bonds, it would suppress the hot carrier multiplication near drain side and the short channel effect in the sub-micron LTPS p-type TFTs. Thus, the electrical characteristics and reliability of the proposed the sub-micron LTPS p-type TFTs were improved effectively, especially for field effect mobility and on/off current ratio.
Besides, we found an issue, the traps in the channel and the resistances of the channel were two factors which influence the on-current of the device. Without the fluorine implantation treatment, the traps in the channel layer would influence the on-current of the device for the different channel thickness. In contrast, after using fluorine implantation treatment, the resistances of the different channel layer would influence the on-current of the device because of the reduction of the traps in the channel.

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