以三氯甲基矽烷為前驅物在Si(111)碳化晶片上製備碳化矽緩衝層之研究

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研究生：	蔡佩君 Pei-Chun Tsai
論文名稱：	以三氯甲基矽烷為前驅物在Si(111)碳化晶片上製備碳化矽緩衝層之研究 Study on the Preparation of SiC Buffer Layer on Si(111) Carbide Substrate Using Trichloromethylsilane as a Precursor
指導教授：	洪儒生 Lu-Sheng Hong
口試委員:	黃智方 Chih-Fang Huang 江志強 Jyh-Chiang Jiang
學位類別：	碩士 Master
系所名稱：	工程學院 - 化學工程系 Department of Chemical Engineering
論文出版年：	2023
畢業學年度：	111
語文別：	中文
論文頁數：	66
中文關鍵詞：	矽、表面碳化、碳化矽緩衝層、超高真空化學氣相沉積、乙炔、三氯甲基矽烷
外文關鍵詞：	Si(111), surface carbonization, SiC buffer layer, UHV-CVD, acetylene, methyltrichlorosilane
相關次數：	點閱：238 下載：2
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本論文使用兩個連續程序，在配備即場式X射線光電子能譜儀（XPS）和反射式高能電子衍射儀（RHEED）的超高真空化學氣相沉積（UHV-CVD）系統中，進行矽晶片（Si(111)）的表面碳化和 SiC 緩衝層之生長。首先，使用低溫即可裂解的乙炔為碳化氣體，發現於700K下Si(111)表面經乙炔壓力4 × 10^-5 torr、10分鐘處理後已形成約一個單層的碳化矽，之後的乙炔稍微的過度暴露即會在造成碳核析出於矽晶表面，造成表面粗糙化。考慮矽晶表面隨碳化進行時矽原子會因漸被碳化層覆蓋而難以擴散至表面的現象，我們改採用乙炔暴露量漸減的方式碳化Si(111)，發現在700K的基材溫度下，以 15 分鐘內漸減乙炔（C2H2）暴露量由 6 × 10^−5 torr降至零的操作，可以獲得原子級平坦且厚度約1.5 單層的SiC(111)碳化表面。接下來在較高的975 K溫度下通入單一分子先驅物-甲基三氯矽烷1 × 10^−4 torr 持續 10 分鐘的劑量可成功地將高品質的表面SiC(111)碳化矽層緩衝延伸至1 ~ 2 nm。

This thesis employs two sequential processes in an ultra-high vacuum chemical vapor deposition (UHV-CVD) system equipped with in-situ X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) to carry out surface carbonization of silicon wafers (Si(111)) and the growth of SiC buffer layers. Initially, acetylene (C2H2) that readily dissociates at low temperature is used as the carbonization gas. It was found that at 700K and under C2H2 pressure of 4 × 10^-5 torr, after 10 minutes of treatment, approximately one monolayer of silicon carbide (SiC) has formed on the Si(111) surface. Subsequently, excessive exposure to C2H2 causes carbon nucleation on the silicon surface, resulting in surface roughening.
Considering that during carbonization, silicon atoms on the Si(111) surface are gradually covered by the carbonized layer, making it difficult for them to diffuse to the surface, a method of gradually reducing C2H2 exposure is adopted for Si(111) carbonization. It was found that at a substrate temperature of 700K, by reducing C2H2 exposure from 6 × 10^−5 torr to zero over 15 minutes, an atomically flat surface with a thickness of approximately 1.5 monolayers of SiC(111) can be obtained.
Next, at a higher temperature of 975K, the introduction of a single molecular precursor - methyltrichlorosilane, with a dose of 1 × 10^−4 torr for 10 minutes, successfully extends the high-quality SiC(111) carbonized silicon layer as a buffer layer to 1 ~ 2 nm thickness.

目錄
摘要    I
Abstract    IV
致謝    V
目錄    VI
圖目錄    IX
表目錄    XII
第一章    緒論    1
1    前言    1
2    研究動機和目的    3
第二章    文獻回顧    5
1    氮化鎵材料    5
1.1 氮化鎵材料特性    5
1.2 氮化鎵晶圓製備困境    7
2    碳化矽基氮化鎵（GaN-on-SiC）和矽基氮化鎵（GaN-on-Si）技術    8
2.1 碳化矽基板特性    8
2.2 矽基氮化鎵（GaN-on-Si）    8
3    碳化矽緩衝層（GaN-on-SiC/Si）技術    10
3.1 製備碳化矽緩衝層目的    10
3.2 Si(111)低溫表面碳化    11
3.3 製備3C-SiC 緩衝層    12
4    本實驗室先前之實驗數據：Si(100)表面碳化    13
第三章    實驗方法與設備    14
1    實驗材料    14
2    實驗設備    16
2.1 超高真空化學氣相沉積系統（UHV-CVD system）    16
2.2 表面碳化反應實驗設備    17
2.3 生長碳化矽緩衝層實驗設備    17
3    實驗程序    19
3.1 Si(111)基材製備    19
3.2 Si(111)基材表面碳化程序    20
3.3 碳化矽緩衝層製備程序    21
4    分析儀器    23
4.1 X射線光電子能譜儀（X-ray Photoelectron Spectroscopy, XPS）    23
4.2 反射式高能電子衍射儀（Reflection High-energy Electron Diffraction,    RHEED）    25
4.3 原子力顯微鏡（Atomic Force Microscope, AFM）    26
4.4 多角度全光譜橢圓偏振技術（Variable Angle Spectroscopic Ellipsometry, VASE）    27
第四章    結果與討論    28
1    甲基三氯矽烷（MTS）於藍寶石（sapphire）基板表面反應動力學之探討    28
2    SiC 緩衝層的 MTS-UHVCVD    33
3    Si(111)基材表面碳化反應製程優化    38
3.1 Si(111)改變溫度條件之表面碳化結果    38
3.2 Si(111)改變乙炔壓力之表面碳化結果    41
3.3 Si(111)最佳條件表面碳化結果    44
4    在優化表面碳化的 Si(111) 上生長 SiC 緩衝層    46
第五章    結論    49
第六章    參考文獻    50


                                

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