類鑽碳膜（Diamond-like carbon, DLC）具有高硬度、高絕緣性、高生物相容性、高化學惰性和導熱性等優點。本研究中，使用ECR電漿與RF電漿組成之混成式電漿化學氣相沉積系統( Hybrid plasma CVD system, HPCVD )沉積類鑽碳膜，氣體通過ECR電漿預解離產生反應氣體自由基，再進入RF電漿環境中成長類鑽碳膜。製備未摻雜之類鑽碳膜，其成長條件為ECR/RF電漿功率分別為650/150 W，甲烷/氫氣流量分別為20/80 sccm，在2 Torr的工作壓力下成長30分鐘。經由拉曼光譜分析，本研究成長之未摻雜類鑽碳薄膜具有D-band(1350 cm-1)和G-band(1580 cm-1)之特徵峰。通入氮氣作為摻雜氣體，發現拉曼光譜在1260 cm-1出現C-N共價鍵之特徵峰，但傅立葉紅外光譜(FTIR)在氮氣流量40及20 sccm 樣品並無發現C-N共價鍵譜峰。而降低到氮氣流量10 sccm出現另一傅立葉紅外光譜在1800cm-1出現C=N鍵結。此外，其D band與G band之強度比(ID/IG ratio)從未摻雜類鑽碳膜之0.33增加至氮摻雜類鑽碳膜之0.59，顯示氮摻雜類鑽碳膜之硬度降低；未摻雜類鑽碳膜光學能隙為4.82 eV，氮摻雜後降至2.26 eV。氮摻雜類鑽碳膜之電阻率相較未摻雜類鑽碳膜可以下降一個數量級可達~106 ohm-cm，壓力由2 Torr降低到1 Torr，傅立葉紅外光譜在1100 cm-1之C-N peak更為明顯，代表製程壓力的降低有利於氮氣摻雜。

Diamond-like carbon (DLC) exhibits a lot of benefits, such as high hardness, high insulation, biocompatibility, high chemical inertness and thermal conductivity etc that had been widely used in the industry applications. In this study, DLC thin-film was grown by using a homemade hybrid plasma chemical vapor deposition (CVD) system which combined the Electron-Cyclotron-Resonance (ECR) plasma and RF-plasma. The gas precursor can be pre-cracking by ECR-plasma and generated radical for further DLC deposition in the RF-plasma environment. After optimized the growth conditions, DLC thin-film was grown at the plasma power of ECR-plasma/RF-plasma = 650/250 W, working pressure of 2 torr, and CH4/H2 flow rate = 20/80 sccm in 30 min. The characteristic peaks of the Raman spectra at 1350 and 1580 cm-1 which identified as the D-band and G-band in the as-grown DLC-thin films. The characteristic peak at 1260 cm-1 (i.e. C-N covalent bond) was observed in the Raman spectrum for adding nitrogen precursor during the growth of DLC thin-film. In addition, the ratio of D-band to G-band peak intensity of Raman spectra increased from 0.33 for as-grown DLC to 0.59 for nitrogen doping DLC sample. The increasing ID/IG ratio means that the decreasing hardness of nitrogen doping DLC thin-film. The resistivity of nitrogen doping DLC thin-film is ~106 ohm-cm which one-order magnitude lower than the undoped DLC thin-film. The further works should be optimized the growth conditions and the post-annealing process for achieving a high conductivity of nitrogen doping DLC thin-film.

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